Abstract:3D packaging has broad applications due to its high integration, lightweight, small package size and low cost. Through silicon vias (TSV) have attracted much attention as the only packaging technology to achieve vertical interconnection. The quality of superior filling by electroplated copper (Cu) determines the reliability of TSV in electronic devices. As one of the most vital additives, levelers are always the confidential part of electrolyte formulations. In general, a nitrogen-containing heterocyclic compound can be employed as a potential leveler for TSV filling, like Janus Green B (JGB). However, the mechanism of the leveler during copper electrodeposition is shrouded in mystery. Whether the nitrogen-nitrogen double bond (-N=N-) or the nitrogen cation (N+) in the JGB molecule take the effect in electroplating is still a hot topic of debate. Here, three levelers with or without -N=N-, containing JGB, phenosafranin (PS) and phenazine methosulfate (PMS), are utilized in the TSV electroplated process to explore the active site of molecules. The filling performance of different levelers were compared. Electrochemical measurements was used to investigate the leveling mechanism. The optical microscope (OM) and ultraviolet spectrophotometer (UV-vis) were used to characterize the filling quality and the change of electrolyte before and after electrodeposition. The results of characterizations confirmed that both -N=N- and N+ play a certain effect in electroplating, the reductive reaction of -N=N- competes with Cu reduction and the electrostatic adsorption of N+ and Cl- enables the deposition inhibition of Cu at salient sites.

Numerical and Experimental Investigation of 2-Thiazoline-2-thiol and Nitrotetrazolium Blue Chloride Compound As Levelers for Through-Hole Copper Electroplating

Effect of leveler on microstructure and stress of electroplated copper for TSV application

Influence of Electroplating Current Density on Through Silicon Via Filling

Structural influence of nitrogen-containing groups on triphenylmethane-based levelers in super-conformal copper electroplating

Through-Hole Copper Electroplating Using Nitrotetrazolium Blue Chloride As A Leveler

Pentaerythritol-Based Compound as a Novel Leveler for Super-Conformal Copper Electroplating

Copper electroplating of through silicon vias (TSV) using a series of nitrogen-containing heterocyclic compounds

Electrochemical Analysis of Cathode in TSV Copper Electroplating

5-Amino-1,3,4-thiadiazole-2-thiol as a new leveler for blind holes copper electroplating: Theoretical calculation and electrochemical studies

Electrochemical Factors Of Levelers On Plating Uniformity Of Through-Holes: Simulation And Experiments

Investigation of Synthesized Carbazole Derivative Cz-BPDB As a High-Performance Leveler for Copper Electroplating

Electrochemical behaviors of additives in high Cu(II) concentration solution for high-aspect-ratio through ceramic holes filling

Strong Convection-Dependent Adsorption of Phenothiazine Skeleton Levelers and Their Application in Copper Electroplating

1-(4-Hydroxyphenyl)-2H-tetrazole-5-thione as a leveler for acid copper electroplating of microvia

Unveiling the Potential and Mechanisms of 3,3'-Bicarbazole-Based Quaternary Ammonium Salts as Levelers

Investigation of Through-Hole Copper Electroplating with Methyl Orange as A Special Leveler

Tetrazole Derived Levelers for Filling Electroplated Cu Microvias: Electrochemical Behaviors and Quantum Calculations

Polyquaternium-2: A New Levelling Agent for Copper Electroplating from Acidic Sulphate Bath

Structural Influence of Terminal Functional Groups on TEG-Based Leveler in Microvia Filling

Computational analysis and experimental evidence of two typical levelers for acid copper electroplating

Influence of Leveler Concentration on Copper Electrodeposition for Through Silicon Via Filling