Abstract:SiC MOSFETs have gained widespread application and attention due to their superior performance, but their reliability is still a problem that must be solved in application. This work focuses on the characterization test and analysis of main electrical characteristics and defect changes of SiC VDMOS with three structures before and after total dose irradiation and annealing recovery experiment. The experimental results show that the electron-hole pairs generated by Co-60-gamma rays inside the devices generate interfacial state traps at the SiO2/Si interface of the gate oxygen layer, and the charge formed by the holes captured by these interfacial state traps at the SiO2/Si interface causes the threshold voltage of the devices negative drift. The double trench device is most affected by the total dose irradiation experiment, with the most significant changes in threshold voltage, saturation drain current, and number of defects, followed by the asymmetric trench device, and the least change in the planar gate device. The characteristics of the asymmetric trench and planar gate devices basically recovered after room-temperature and high-temperature annealing, while the double trench device was still severely degraded. Analysis is due to the immaturity of etching and oxidation processes in trench gate structure devices, which leads to the poorer radiation resistance of the SiO2/SiC interface at the gate oxide layer compared to the planar gate. While the asymmetric trench structure protects the trench gate oxide layer by forming a P+ region under the gate slot through ion injection, which can alleviate the problem of poor radiation resistance of the trench gate structure to some extent.

Investigation of Total Ionizing Dose Radiation Effects on SiC MOSFETs by Modulating the Nitrogen Content in Gate Oxide Processing

The Effect of Diluted N2O Annealing Time on Gate Dielectric Reliability of SiC Metal-Oxide Semiconductor Capacitors and Characterization of Performance on SiC Metal-Oxide Semiconductor Field Effect Transistor

The Influence of Total Dose Irradiation and Annealing Experiments on Three Types of SiC Power Devices

Total ionizing dose effects of 60Co-γ ray radiation on SiC MOSFETs with different gate oxide thickness

Electron Irradiation Effects and Room-Temperature Annealing Mechanisms for SiC MOSFETs

Total ionizing dose effects of Co-60-& gamma; ray radiation on SiC MOSFETs with different gate oxide thickness

The Degradation and Recovery of 1200-V SiC MOSFET with Different Total Ionizing Doses

Investigation of Heavy-Ions-Induced Leakage Current Modes and Degradation Mechanism in SiC MOSFETs under Complex Heavy Ion Conditions

Impact of Heavy-Ion Irradiation on Gate Oxide Reliability of Silicon Carbide Power MOSFET

Total Ionizing Dose Effects of 60co Γ-Ray Radiation on Split-Gate SiC MOSFETs

Effect of Si-implantation Induced Nanocrystals on Reducing the Oxide and Interface Traps Densities of PD SOI MOSFET under Total-dose Irradiation

Total Ionizing Effects on Static Characteristics of 1200V SiC MOSFET Power Devices with Planar and Trench Structures

Oxide Electric Field-Induced Degradation of SiC MOSFET for Heavy-Ion Irradiation

Effects of 5 MeV Proton Irradiation on Nitrided SiO2/4H-SiC MOS Capacitors and the Related Mechanisms

Special Degradation Effects of 60co Γ-Rays Irradiation on Electrical Parameters of SiC MOSFETs

Analysis of Gate Oxide Degradation Induced by Heavy Ion in SiC Power MOSFETs

Influence of Various NO Annealing Conditions on N-type and P-type 4H-Sic MOS Capacitors

Suppression of Hot-Carrier-induced Degradation in N-Mosfets at Low Temperatures by N2O-nitridation of Gate Oxide

Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

Ionization Radiation-Induced Reliability Degradation of SiC Power MOSFET