Abstract:Although surface plasmon (SP) coupling has been widely used for enhancing the emission efficiency of an InGaN/GaN quantum well (QW) structure, the interplay of the carrier transport behavior in the QW with SP coupling, which is a crucial mechanism controlling the SP-coupling induced QW emission enhancement, is still an issue not well explored yet. To understand the effects of SP coupling on the radiative and non-radiative recombination behaviors of carriers in a QW structure, the temperature-dependent time-resolved photoluminescence spectroscopies of two QW samples of different indium contents with surface Ag nanoparticles are studied. A two-single-exponential model is used for calibrating their radiative and non-radiative decay times. The SP coupling process, which transfers carrier energy from a QW into the SP resonance mode for effective radiation and increases the effective radiative recombination rate, produces energy-dependent carrier depletion and, hence, disturbs the quasi-equilibrium condition of carrier distribution. In this situation, a strong carrier transport process occurs targeting a new quasi-equilibrium condition that enhances non-radiative recombination and, hence, reduces the benefit of using the SP coupling technique. To alleviate this problem of SP-coupling induced energy loss, a weak energy-dependent or broad-spectrum SP coupling process is recommended.

Mechanism on Effect of Surface Plasmons Coupling with InGaN/GaN Quantum Wells: Enhancement and Suppression of Photoluminescence Intensity

Mechanism on Effect of Surface Plasmons Coupling with InGaN/GaN Quantum Wells: Enhancement and Suppression of Photoluminescence Intensity

Influence of localized surface plasmons on carrier dynamics in InGaN/GaN quantum wells covered with Ag nanoparticles for enhanced photoluminescence

Effect of the Band Structure of InGaN/GaN Quantum Well on the Surface Plasmon Enhanced Light-Emitting Diodes

Surface plasmon coupling effects on the behaviors of radiative and non-radiative recombination in an InGaN/GaN quantum well

Enhanced Luminescence Performance of Quantum Wells by Coupling Piezo-Phototronic with Plasmonic Effects

Enhanced Internal Quantum Efficiency of an InGaN/GaN Quantum Well As a Function of Silver Thickness Due to Surface Plasmon Coupling

Investigation Of Surface-Plasmon Coupled Red Light Emitting Ingan/Gan Multi-Quantum Well With Ag Nanostructures Coated On Gan Surface

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Investigation of Surface Plasmon Coupling with the Quantum Well for Reducing Efficiency Droop in GaN-based Light Emitting Diodes

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Photoluminescence Tailoring of InGaN/GaN Quantum Wells with Silver Nanoparticle‐assembled Films