Characterization Of The Inhomogeneous Barrier Distribution In A Pt/(100) Beta-Ga2o3 Schottky Diode Via Its Temperature-Dependent Electrical Properties
Guangzhong Jian,Qiming He,Wenxiang Mu,Bo Fu,Hang Dong,Yuan Qin,Ying Zhang,Huiwen Xue,Shibing Long,Zhitai Jia,Hangbing Lv,Qi Liu,Xutang Tao,Ming Liu
DOI: https://doi.org/10.1063/1.5007197
IF: 1.697
2018-01-01
AIP Advances
Abstract:beta-Ga2O3 is an ultra-wide bandgap semiconductor with applications in power electronic devices. Revealing the transport characteristics of beta-Ga2O3 devices at various temperatures is important for improving device performance and reliability. In this study, we fabricated a Pt/beta-Ga2O3 Schottky barrier diode with good performance characteristics, such as a low ON-resistance, high forward current, and a large rectification ratio. Its temperature-dependent current-voltage and capacitance-voltage characteristics were measured at various temperatures. The characteristic diode parameters were derived using thermionic emission theory. The ideality factor n was found to decrease from 2.57 to 1.16 while the zero-bias barrier height Phi(b0) increased from 0.47 V to 1.00 V when the temperature was increased from 125 K to 350 K. This was explained by the Gaussian distribution of barrier height inhomogeneity. The mean barrier height (Phi) over bar (b0) = 1.27 V and zero-bias standard deviation sigma (0) = 0.13 V were obtained. A modified Richardson plot gave a Richardson constant A* of 36.02 A.cm(-2).K-2, which is close to the theoretical value of 41.11 A.cm(-2).K-2. The differences between the barrier heights determined using the capacitance-voltage and current-voltage curves were also in line with the Gaussian distribution of barrier height inhomogeneity. (c) 2018 Author(s).