Abstract:In realm of β-Ga2O3 Schottky Barrier Diodes (SBDs), insertion layer appeared as an effective strategy for enhancing breakdown voltage. Presently, insertion layer techniques typically employed atomic layer deposition (ALD) to grow insulators with low electron affinity (e.g., Al2O3, HfO2). Although these insertion layers enhanced the reverse break-down characteristics, substantially degraded forward con-duction was also induced. In this study, a TiO2 thin layer by thermally oxidized Titanium metal was inserted to elevate the breakdown voltage and power figure of merit (PFOM) of β-Ga2O3 SBDs, while maintaining the on-resistance nearly unchanged. In comparison with the conventional met-al/semiconductor-SBD (MS-SBD), the thermally oxidized metal/insulator/semiconductor-SBD (MIS-SBD) exhibited 2.75 times elevation of breakdown voltage with only 11.6% reduction of forward current at +5V. The PFOM of the thermally oxidized MIS-SBD was enhanced by 7.6-fold compared to conventional MS-SBD, and by 15.7-fold com-pared to the counterpart ALD MIS-SBD. Analysis of the TiO2/β-Ga2O3 interface characteristics through X-ray photo-electron spectroscopy (XPS) and capacitance-voltage (C–V) measurements revealed that the thermally oxidized TiO2-SBD possesses smaller band offset and larger interface trap density (Dit) compared to the ALD counterpart, which contribute to the higher PFOM of the thermally oxidized TiO2-SBD. This novel TiO2/β-Ga2O3 structure exhibited superior electrical properties, providing potential solution for high performed SBD.

Influence Of Trench Oxide On Schottky Barrier Height For Tisix/Si Power Diode

Design and Optimizing of Trench Schottky Barrier-Controlled Β-Ga2o3 Schottky Diode with Low Turn-on Voltage and Leakage Current

Effective Schottky Barrier Height Lowering By TiN Capping Layer For TiSix/Si Power Diode

Effect of the Trench Shape on the Electrical Properties of Silicon Based Trench Barrier Schottky Diode

Voltage dependence of effective barrier height reduction in inhomogeneous Schottky diodes

Effect of TiN Capping Layer on Barrier Inhomogeneities for TiSix/Si Schottky Diode

Improved Β-Ga2o3 Schottky Barrier Diodes Via Thermal Oxidation of Titanium Insertion Layer

Reduction in Reverse Leakage Current of Diamond Vertical Schottky Barrier Diode Using SiNX Field Plate Structure

Design and Experimental Study of 4H-Sic Trenched Junction Barrier Schottky Diodes

Oxidation suppression for YbSi2-X formation and new method to extract Schottky barrier height by admittance measurement

SiC Trench MOSFET with Integrated Self-Assembled Three-Level Protection Schottky Barrier Diode

The Impact of the Surface Treatments on the Properties of Gan/3c-Sic/Si Based Schottky Barrier Diodes

Schottky-Barrier Height Tuning by Means of Ion Implantation into Preformed Silicide Films Followed by Drive-In Anneal

Improving the barrier inhomogeneity of 4H-SiC Schottky diodes by inserting Al2O3 interface layer

A Comparative Study of Two Different Schemes to Dopant Segregation at NiSi/Si and PtSi/Si Interfaces for Schottky Barrier Height Lowering

A Low Loss Single-Channel SiC Trench MOSFET with Integrated Trench MOS Barrier Schottky Diode

Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode

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4H-Sic Trench MOSFET with an Integrated Schottky Barrier Diode and L-shaped P+ Shielding Region

Schottky Barrier Height Engineering In $β$-Ga$_2$O$_3$ Using SiO$_2$ Interlayer Dielectric