Abstract:Heat‐assisted intensive light‐soaking of silicon heterojunction solar cells establishes at least two distinct mechanisms. One mechanism is the passivation improvement between c–Si wafer and hydrogenated amorphous silicon interface, which improves the open‐circuit voltage and fill factor (FF). The second mechanism is the enhancement of active doping density in the doped layers, which contributes to the FF enhancement. Heat‐assisted intensive light soaking has been proposed as an effective posttreatment to further enhance the performance of silicon heterojunction (SHJ) solar cells. In the current study, it is aimed to distinguish the effects of heat and illumination on different (doped and undoped) layers of the SHJ contact stack. It is discovered that both elevated temperature and illumination are necessary to significantly reduce interface recombination when working effectively together. The synergistic effect on passivation displays a thermal activation energy of approximately 0.5 eV. This is likely due to the photogenerated electron/hole pairs in the c–Si wafer, where nearly all of the incident light is absorbed. By distinguishing between the effects of light and heat effects on the conductivity of p‐ and n‐type doped hydrogenated amorphous silicon (a–Si:H) layers, it is demonstrated that only heat is accountable for the observed rise in conductivity. According to numerical device simulations, the significant contribution to the open‐circuit voltage enhancement arises from the reduced density of defect states at the c–Si/intrinsic a–Si:H interface. In addition, the evolution of the fill factor is highly dependent on changes in interface defect density and the band tail state density of p‐type a–Si:H.

Light Soaking of Hydrogenated Amorphous Silicon: a Short Review

Intensive Light Soaking Improves Electricity Generation of Silicon Heterojunction Solar Cells by the Anomalous Staebler–Wronski Effect

Insights into the Heat‐Assisted Intensive Light‐Soaking Effect on Silicon Heterojunction Solar Cells

Light management in hydrogenated amorphous silicon germanium solar cells

High-Pressure Water-Vapor Annealing for Enhancement of A-Si:H Film Passivation of Silicon Surface

Investigation of Microstructure and Photoelectric Properties of Boron- Doped Amorphous Silicon Films

Improved Amorphous/crystalline Silicon Interface Passivation for Silicon Heterojunction Solar Cells by Hot-Wire Atomic Hydrogen During Doped A-Si:H Deposition

Abnormal Staebler-Wronski effect of amorphous silicon

Influence of Light Soaking on Silicon Heterojunction Solar Cells With Various Architectures

The microstructure of underdense hydrogenated amorphous silicon and its application to silicon heterojunction solar cells

Influence of intrinsic amorphous silicon passivation layer on the dark-state stability of SHJ cells

Study of the correlation between hydrogenated amorphous silicon microstructure and crystalline silicon surface passivation in heterojunction solar cells

Recent Progresses on the Stability of Hydrogenated Amorphous Silicon Thin Films

Dry Passivation Process for Silicon Heterojunction Solar Cells Using Hydrogen Plasma Treatment Followed by In Situ a-Si:H Deposition

Optimized N-Type Amorphous Silicon Window Layers Via Hydrogen Dilution For Silicon Heterojunction Solar Cells By Catalytic Chemical Vapor Deposition

Prolonged Annealing Improves Hole Transport of Silicon Heterojunction Solar Cells

Reversible conductivity changes in discharge‐produced amorphous Si

Short wavelength photons destroying Si‐H bonds and its influence on high efficiency silicon solar cells and modules

Current Injection‐induced Performance Enhancement in n‐type Silicon Heterojunction Solar Cells

Significant Improvement of Passivation Performance by Two-Step Preparation of Amorphous Silicon Passivation Layers in Silicon Heterojunction Solar Cells*

Light-induced activation of boron doping in hydrogenated amorphous silicon for over 25% efficiency silicon solar cells