High-Gain Regenerative Parametric Amplification On-Chip

Yun Zhao,Jae K. Jang,Xingchen Ji,Yoshitomo Okawachi,Michal Lipson,Alexander L. Gaeta

DOI: https://doi.org/10.1364/nlo.2023.tu2a.1

2023-01-01

Abstract:We demonstrate a chip-based regenerative parametric amplifier with 30-dB continuous-wave gain and < 10-mW of pump power, which allows for on-chip material-independent gain using low-cost pump lasers.

What problem does this paper attempt to address?

High-Gain Parametric Amplification On-Chip at Low Pump Powers

Yun Zhao,Jae K. Jang,Xingchen Ji,Yoshitomo Okawachi,Michal Lipson,Alexander L. Gaeta

2023-01-01

Abstract:We demonstrate a novel amplification scheme that yields high (30-dB), continuous-wave parametric amplification of weak signals using small-footprint microresonators at pump power levels (< 10 mW) compatible with typical chip-scale lasers.
Large regenerative parametric amplification on chip at ultra-low pump powers

Yun Zhao,Jae K. Jang,Xingchen Ji,Yoshitomo Okawachi,Michal Lipson,Alexander L. Gaeta

DOI: https://doi.org/10.48550/arXiv.2209.05589

2022-09-12

Optics

Abstract:Chip-based optical amplifiers can significantly expand the functionalities of photonic devices. In particular, optical-parametric amplifiers (OPAs), with engineerable gain-spectra, are well-suited for nonlinear-photonic applications. Chip-based OPAs typically require long waveguides that occupy a large footprint, and high pump powers that cannot be easily produced with chip-scale lasers. We theoretically and experimentally demonstrate a microresonator-assisted regenerative OPA that benefits from the large nonlinearity enhancement of microresonators and yields a high gain in a small footprint. We achieve 30-dB parametric gain with only 9 mW of cw-pump power and show that the gain spectrum can be engineered to cover telecom channels inaccessible with Er-based amplifiers. We further demonstrate the amplification of Kerr-soliton comb lines and the preservation of their phase properties. Additionally, we demonstrate amplification by injection locking of optical-parametric oscillators, which corresponds to a regenerative amplifier pumped above the oscillation threshold. Novel dispersion engineering techniques such as coupled cavities and higher-order-dispersion phase matching can further extend the tunability and spectral coverage of our amplification schemes. The combination of high gain, small footprint, low pump power, and flexible gain-spectra engineering of our regenerative OPA is ideal for amplifying signals from the nanowatt to microwatt regimes for portable or space-based devices where ultralow electrical power levels are required and can lead to important applications in on-chip optical- and microwave-frequency synthesis and precise timekeeping.
X-Band High-Efficiency Continuous Class B Power Amplifier Gan Mmic Assisted By Input Second-Harmonic Tuning

Chen Jin,Yuan Gao,Wei Chen,Jianhua Huang,Zhiyu Wang,Jiongjiong Mo,Faxin Yu

DOI: https://doi.org/10.3390/electronics8111312

IF: 2.9

2019-01-01

Electronics

Abstract:This paper presents a high-efficiency continuous class B power amplifier MMIC (Monolithic Microwave Integrated Circuit) from 8 GHz to 10.5 GHz, fabricated with 0.25 mu m GaN-on-SiC technology. The Pedro load-line method was performed to calculate the optimum load of the GaN field-effect transistor (FET) for efficiency enhancement. Optimized by an output second-harmonic tuned network, fundamental to second-harmonic impedance, mapping was established point-to-point within a broad frequency band, which approached the classic continuous class B mode with an expanded high-efficiency bandwidth. Moreover, the contribution to the output capacitance of the FET was introduced into the output second-harmonic tuned network, which simplified the structure of the output matching network. Assisted by the second-harmonic source-pull technique, the input second-harmonic tuned network was optimized to improve the efficiency of the power amplifier over the operation band. The measurement results showed 51-59% PAE (Power Added Efficiency) and 19.8-21.2 dB power gain with a saturated power of 40.8-42.2 dBm from 8 GHz to 10.5 GHz. The size of the chip was 3.2 x 2.4 mm(2).
Photonic chip-based continuous-travelling-wave parametric amplifier

Johann Riemensberger,Junqiu Liu,Nikolai Kuznetsov,Jijun He,Rui Ning Wang,Tobias J. Kippenberg

DOI: https://doi.org/10.48550/arXiv.2107.09582

2021-07-20

Optics

Abstract:The ability to amplify optical signals is of pivotal importance across science and technology. The development of optical amplifiers has revolutionized optical communications, which are today pervasively used in virtually all sensing and communication applications of coherent laser sources. In the telecommunication bands, optical amplifiers typically utilize gain media based on III-V semiconductors or rare-earth-doped fibers. Another way to amplify optical signals is to utilize the Kerr nonlinearity of optical fibers or waveguides via parametric processes. Such parametric amplifiers of travelling continuous wave have been originally developed in the microwave domain, and enable quantum-limited signal amplification with high peak gain, broadband gain spectrum tailored via dispersion control, and ability to enable phase sensitive amplification. Despite these advantages, optical amplifiers based on parametric gain have proven impractical in silica fibers due to the low Kerr nonlinearity. Recent advances in photonic integrated circuits have revived interest in parametric amplifiers due to the significantly increased nonlinearity in various integrated platforms. Yet, despite major progress, continuous-wave-pumped parametric amplifiers built on photonic chips have to date remained out of reach. Here we demonstrate a chip-based travelling-wave optical parametric amplifier with net signal gain in the continuous-wave regime. Using ultralow-loss, dispersion-engineered, meter-long, silicon nitride photonic integrated circuits that are tightly coiled on a photonic chip, we achieve a continuous parametric gain of 12 dB that exceeds both the on-chip optical propagation loss and fiber-chip-fiber coupling losses in the optical C-band.
A 68.5~90 GHz High-Gain Power Amplifier with Capacitive Stability Enhancement Technique in 0.13 Μm SiGe BiCMOS

Yiming Yu,Jia Cao,Zhirui Zong,Pan Tang,Kai Yi,Chenxi Zhao,Huihua Liu,Yunqiu Wu,Wen-Yan Yin,Kai Kang

DOI: https://doi.org/10.1109/tmtt.2020.3019292

IF: 4.3

2020-01-01

IEEE Transactions on Microwave Theory and Techniques

Abstract:This article presents a wideband millimeter-wave power amplifier (PA) with a capacitive stability enhancement technique. It is composed of three differential cascode stages to attain high-power gain and large output power. To ensure the stabilization of the amplifier, a robust technique based on a series base capacitor is proposed and applied in each stage. Each capacitor creates a low-frequency zero to adjust the phase and amplitude responses of the differential cascode structure. As a result, the phase margin of the loop gain is increased remarkably. By adjusting the series base capacitors, the low-frequency zeros and gains of the three stages can be optimized. Therefore, the operating bandwidth is also extended. Meanwhile, a transformer-based four-path power combination network with a large current capacity is developed to further enlarge the output power. The circuit is demonstrated in a commercial 0.13 μm SiGe BiCMOS process. According to the measurement results, the PA obtains a saturated output power (P Sat ) of 18.5 dBm and output referred 1-dB compression point (OP 1dB ) of 16.32 dBm at 77 GHz. The tested small-signal gain is 26.7 dB at 77 GHz. Its 3 dB gain bandwidth is beyond 21.5 GHz, which ranges from 68.5 to 90 GHz. The P Sat variation is less than 0.57 dB at the frequency range from 70 to 85 GHz. The measurement also shows the PA with the proposed technique is unconditionally stable over the entire frequency band. The chip area is only 0.684 mm 2 .
A photonic integrated continuous-travelling-wave parametric amplifier

Johann Riemensberger,Nikolai Kuznetsov,Junqiu Liu,Jijun He,Rui Ning Wang,Tobias J. Kippenberg

DOI: https://doi.org/10.1038/s41586-022-05329-1

IF: 64.8

2022-12-01

Nature

Abstract:The ability to amplify optical signals is of pivotal importance across science and technology typically using rare-earth-doped fibres or gain media based on III–V semiconductors. A different physical process to amplify optical signals is to use the Kerr nonlinearity of optical fibres through parametric interactions 1,2 . Pioneering work demonstrated continuous-wave net-gain travelling-wave parametric amplification in fibres 3 , enabling, for example, phase-sensitive (that is, noiseless) amplification 4 , link span increase 5 , signal regeneration and nonlinear phase noise mitigation 6 . Despite great progress 7,8,9,10,11,12,13,14,15 , all photonic integrated circuit-based demonstrations of net parametric gain have necessitated pulsed lasers, limiting their practical use. Until now, only bulk micromachined periodically poled lithium niobate (PPLN) waveguide chips have achieved continuous-wave gain 16,17 , yet their integration with silicon-wafer-based photonic circuits has not been shown. Here we demonstrate a photonic-integrated-circuit-based travelling-wave optical parametric amplifier with net signal gain in the continuous-wave regime. Using ultralow-loss, dispersion-engineered, metre-long, Si 3 N 4 photonic integrated circuits 18 on a silicon chip of dimensions 5 × 5 mm 2 , we achieve a continuous parametric gain of 12 dB that exceeds both the on-chip optical propagation loss and fibre–chip–fibre coupling losses in the telecommunication C band. Our work demonstrates the potential of photonic-integrated-circuit-based parametric amplifiers that have lithographically controlled gain spectrum, compact footprint, resilience to optical feedback and quantum-limited performance, and can operate in the wavelength ranges from visible to mid-infrared and outside conventional rare-earth amplification bands.

multidisciplinary sciences
Mid-infrared optical parametric amplifier using silicon nanophotonic waveguides

Xiaoping Liu,Richard M. Osgood Jr.,Yurii A. Vlasov,William M. J. Green

DOI: https://doi.org/10.1038/nphoton.2010.119

2010-01-11

Abstract:All-optical signal processing is envisioned as an approach to dramatically decrease power consumption and speed up performance of next-generation optical telecommunications networks. Nonlinear optical effects, such as four-wave mixing (FWM) and parametric gain, have long been explored to realize all-optical functions in glass fibers. An alternative approach is to employ nanoscale engineering of silicon waveguides to enhance the optical nonlinearities by up to five orders of magnitude, enabling integrated chip-scale all-optical signal processing. Previously, strong two-photon absorption (TPA) of the telecom-band pump has been a fundamental and unavoidable obstacle, limiting parametric gain to values on the order of a few dB. Here we demonstrate a silicon nanophotonic optical parametric amplifier exhibiting gain as large as 25.4 dB, by operating the pump in the mid-IR near one-half the band-gap energy (E~0.55eV, lambda~2200nm), at which parasitic TPA-related absorption vanishes. This gain is high enough to compensate all insertion losses, resulting in 13 dB net off-chip amplification. Furthermore, dispersion engineering dramatically increases the gain bandwidth to more than 220 nm, all realized using an ultra-compact 4 mm silicon chip. Beyond its significant relevance to all-optical signal processing, the broadband parametric gain also facilitates the simultaneous generation of multiple on-chip mid-IR sources through cascaded FWM, covering a 500 nm spectral range. Together, these results provide a foundation for the construction of silicon-based room-temperature mid-IR light sources including tunable chip-scale parametric oscillators, optical frequency combs, and supercontinuum generators.

Optics
Photonic Integrated Erbium-Doped Silicon Nitride Amplifiers with Intense Net Gain

Yang Liu,Zheru Qiu,Xinru Ji,Jijun He,Johann Riemensberger,Arslan S. Raja,Rui Ning Wang,Junqiu Liu,Tobias J. Kippenberg

DOI: https://doi.org/10.1364/cleo_si.2022.sm4g.4

2022-01-01

Abstract:We demonstrate photonic integrated erbium-implanted Si 3 N 4 amplifiers that enable record-high 26 dB on-chip net gain and saturation output power exceeding 25 mW, providing an active Si 3 N 4 nanophotonic platform for integrated lasers, LiDARs and microwave photonics.
High Power On-Chip Integrated Laser

Yair Antman,Andres Gil-Molina,Ohad Westreich,Xingchen Ji,Alexander L. Gaeta,Michal Lipson

DOI: https://doi.org/10.1364/oe.528864

IF: 3.8

2024-01-01

Optics Express

Abstract:The lack of high power integrated lasers have been limiting silicon photonics. Despite much progress made in chip-scale laser integration, power remains below the level required for key applications. The main inhibiting factor for high power is the low energy efficiency at high pumping currents, dictated by the small size of the active device. Here we break this power limitation by demonstrating a platform that relies on the coupling of a broad-area multimode gain to a silicon-nitride feedback chip, which acts as an external cavity. The feedback provided by the silicon-nitride chip is routed through a ring resonator and a single-mode filter, thus causing the otherwise multimode-gain chip to concentrate its power into a single highly-coherent mode. Our device produces more than 150 mW of power and 400 kHz linewidth. We achieve these high-performance metrics while maintaining a small footprint of 3 mm^2.
High quantum efficiency parametric amplification via hybridized nonlinear optics

Noah Flemens,Dylan Heberle,Jiaoyang Zheng,Devin J. Dean,Connor Davis,Kevin Zawilski,Peter G. Schunemann,Jeffrey Moses

DOI: https://doi.org/10.48550/arXiv.2207.04147

2022-07-09

Abstract:Parametric amplifiers have allowed breakthroughs in ultrafast, strong-field, and high-energy density laser science and are an essential tool for extending the frequency range of powerful emerging diode-pumped solid-state laser technology. However, their impact is limited by inherently low quantum efficiency due to nonuniform light extraction. Here we demonstrate a new type of parametric amplifier based on hybridized nonlinear optics. Hybridization of parametric amplification with idler second harmonic generation induces unusual evolution dynamics for a fully parametric amplifier - with saturating rather than cyclic gain - observed here for the first time. This allows highly uniform light extraction enabling unprecedented efficiency for a lossless amplifier with Gaussian-like intensity profiles - a 48-dB single-stage gain with 68% quantum efficiency and 44% pump-to-signal energy conversion - a several-fold improvement over the standard. Possessing both laser-like high quantum efficiency and the advantages of thermal-loading free parametric systems, this simple approach can be implemented widely and have significant impact by increasing several-fold the power available for science and industry.

Optics,Applied Physics
An ultra-broadband photonic-chip-based traveling-wave parametric amplifier

Nikolai Kuznetsov,Alberto Nardi,Johann Riemensberger,Alisa Davydova,Mikhail Churaev,Paul Seidler,Tobias J. Kippenberg

2024-11-02

Abstract:Optical amplification, crucial for modern communication and data center interconnects, primarily relies on erbium-doped fiber amplifiers (EDFAs) to enhance signals without distortion. While EDFAs were historically decisive for the introduction of dense wavelength-division multiplexing, they only cover a portion of the low-loss spectrum of optical fibers. Pioneering work on optical traveling-wave parametric amplifiers (TWPAs) utilizing intrinsic third-order optical nonlinearity has led to demonstrations of increased channel capacity and performance. TWPAs are unidirectional, offer high gain, and can reach the 3-dB quantum limit for phase-preserving amplifiers. Despite the use of highly nonlinear fibers or bulk waveguides, their power requirements and technical complexity have impeded adoption. In contrast, TWPAs based on photonic integrated circuits (PICs) offer the advantages of substantially increased mode confinement and optical nonlinearity but have been limited in bandwidth because of the trade-off with maintaining low propagation loss. We overcome this challenge by using low-loss gallium phosphide-on-silicon dioxide PICs and attain up to 35~dB of parametric gain with waveguides only a few centimeters long in a compact footprint of 0.25 square millimeters. Fiber-to-fiber net gain exceeding 10 dB across a bandwidth of approximately 140 nm is achieved, surpassing the gain window of a standard C-band EDFA. We furthermore demonstrate the capability to handle weak signals; input powers can range over six orders of magnitude while maintaining a low noise figure. We exploit these performance characteristics to amplify both optical frequency combs and coherent communication signals. This marks the first ultra-broadband, high-gain, continuous-wave amplification in a PIC, opening up new capabilities for next-generation optical communication, metrology, and sensing.

Optics,Applied Physics
High-gain optical parametric amplification with continuous-wave pump using domain-engineered thin film lithium niobate waveguide

Mengwen Chen,Chenyu Wang,Kunpeng Jia,Xiao-Hui Tian,Jie Tang,Chunxi Zhu,Xiaowen Gu,Zexing Zhao,Zikang Wang,Zhilin Ye,Ji Tang,Yong Zhang,Zhong Yan,Guang Qian,Biaobing Jin,Zhenlin Wang,Shi-Ning Zhu,Zhenda Xie

2024-11-16

Abstract:While thin film lithium niobate (TFLN) is known for efficient signal generation, on-chip signal amplification remains challenging from fully integrated optical communication circuits. Here we demonstrate the first continuous-wave-pump optical parametric amplification (OPA) using an x-cut domain-engineered TFLN waveguide, with high gain over the telecom band up to 13.9 dB, and test it for high signal-to-noise ratio signal amplification using a commercial optical communication module pair. Fabricated in wafer scale using common process as devices including modulators, this OPA device marks an important step in TFLN photonic integration.

Optics
A Compact and Robust Regenerative Amplifier Pump Source for High Repetition Rate Terahertz Parametric Amplifier

Huang Yue,Xu Hang,Xu Jinqiang,Feng Liwen,Wang Tianyi,Wang Lina,Liu Zhongqi,Huang Senlin,Liu Kexin

DOI: https://doi.org/10.3788/lop202259.2136001

2022-01-01

Abstract:In this paper we report a compact and robust regenerative amplifier developed as the pump laser for a high repetition rate terahertz parametric amplifier. With properly chosen pump source and carefully designed cavity, Nd:YVO4 crystal, and laser beam collimator, a maximum output pulse energy of 480 mu J has been achieved at the repetition rate of 10 kHz. The output laser has a nearly Gaussian transverse profile and a narrow bandwidth of 0. 2 nm. Long-term monitoring shows an root mean square power fluctuation of about 1%. These characteristics satisfy all requirements for high repetition rate terahertz parametric amplifier.
Integrated Optical Parametric Amplifier with Record Gain

Junjie Xiao,Di Xia,Liyang Luo,Zhaohui Li,Bin Zhang

DOI: https://doi.org/10.1364/ofc.2024.th1d.4

2024-01-01

Abstract:We report an innovative phase-sensitive optical amplification using GeSbS microresonators, obtaining 31.5 dB gain with 8.5 mW CW-pump power in phase-insensitive mode, a 4.95 dB additional gain and 18.9 dB extinction ratio in phase-sensitive mode.
A 180 GHz High-Gain Cascode Amplifier in 130-Nm SiGe Process

Xingcun Li,Wenhua Chen,Zhenghe Feng

DOI: https://doi.org/10.1109/imc-5g47857.2019.9160385

2019-01-01

Abstract:In this paper, a high-gain millimeter wave power amplifier is proposed, which adjusts the the inductive impedance at the base of common-base transistor and optimizes the cascode layout structure to reduce device parasitics. To enhance the power amplifier gain, the power amplification capability of transistor is fully utilized near the edge of the stable area. To demonstrate the feasibility of the proposed method, a 180 GHz single-stage cascode amplifier is designed in 130 nm SiGe technology. The fabricated amplifier has a maximum measured power gain of 10 dB at 180 GHz and 3-dB bandwidth of 20 GHz and The chip consumes 112 mW of power from a 4-V supply.
Net-gain from a parametric amplifier on a chalcogenide optical chip

Michael R E Lamont,Barry Luther-Davies,Duk-Yong Choi,Steve Madden,Xin Gai,Benjamin J Eggleton

DOI: https://doi.org/10.1364/oe.16.020374

2008-12-08

Abstract:We report first observation of net-gain from an optical parametric amplifier in a planar waveguide. This was achieved in a low-loss As(2)S(3) planar waveguide, with a strong nonlinearity (gamma approximately 10 /W/m) and tailored anomalous dispersion yielding efficient Raman-assisted four-wave mixing at telecom wavelengths. The experiments were in good agreement with theory, and indicate a peak net-gain greater than +16 dB for the signal and idler (+30 dB neglecting coupling losses) and a broad bandwidth spanning 180 nm.
180 GHz high-gain cascode power amplifier in a 130 nm SiGe process

Xingcun Li,Wenhua Chen,Yunfan Wang,Zhenghe Feng

DOI: https://doi.org/10.1049/el.2019.4155

2020-01-01

Electronics Letters

Abstract:A positive feedback gain-enhanced technique for power amplifiers has been introduced in this Letter. With the proposed circuit design method for optimal inductive feedback, a 180 GHz high-gain single-stage cascode power amplifier in a 130 nm SiGe process is implemented. The measurement results show a power gain of 10 dB and 20 GHz bandwidth with 110 mW dc power are achieved, and 6.5 dBm of output power referred to P-1dB and 3.5% collector efficiency are attained. The chip area of the power amplifier is only 0.50 x 0.48 mm(2).
Polymer-Silica Hybrid On-Chip Amplifier with Vertical Pumping Method

Yue Cao,Baizhu Lin,Yue Sun,Yunji Yi,Yijun Liu,Jie Zheng,Fei Wang,Daming Zhang

DOI: https://doi.org/10.1038/s41598-018-31943-z

IF: 4.6

2018-01-01

Scientific Reports

Abstract:This article demonstrates a multilayer polymer-silica hybrid on-chip amplifier combining mode division multiplexing method. The multilayer amplifier consists of a pumping silica waveguide and an amplifying polymer waveguide. The pumping waveguide possesses the stability and the high damage threshold. The amplifying waveguide takes the advantages of the high compatibility and the high doping rate. The vertical pump of mode division multiplexing method can introduce the pumping light into the amplifying waveguide at any desired position of the chip. By the isolation method between signal and pumping light, the pumping light can be coupled into the amplifying waveguide, while the signal light cannot be coupled into the pumping waveguide. The parameters of doping rates, waveguide lengths, overlap factors, coupling parameters are calculated to optimize the gain characteristics of the amplifier. The amplifier with three position-optimized pumping light was designed achieving a maximum gain of 33.89 dB/cm with a waveguide length of 6 cm, a signal power of 0.1 mW and a pumping power of 300 mW. This polymer-silica hybrid amplifier is promising for the on-chip loss compensation of the 3D photonic integrated circuits and all optical transistors.
Advanced Integrated Microwave Signal Processing with Giant On-Chip Brillouin Gain

Amol Choudhary,Blair Morrison,Iman Aryanfar,Shayan Shahnia,Mattia Pagani,Yang Liu,Khu Vu,Stephen Madden,David Marpaung,Benjamin J. Eggleton

DOI: https://doi.org/10.1109/jlt.2016.2613558

IF: 4.7

2017-01-01

Journal of Lightwave Technology

Abstract:Processing of microwave signals using photonics has several key advantages for applications in wireless communications. However, to bring photonic-based microwave signal processing to the mainstream requires a reduction of the form factor. Integration is a route for achieving high-performance, low-cost, and small-footprint microwave photonic devices. A high on-chip stimulated Brillouin scattering (SBS) gain is essential for synthesizing several key functionalities for advanced integrated microwave signal processing. We have optimized our on-chip SBS platform to achieve a record on-chip gain of 52 dB. In this paper, we discuss the implications of this giant gain from the viewpoint of new enabled technologies. The giant gain can be distributed over wide frequencies, which can be exploited for the realization of reconfigurable microwave bandpass, bandstop, and multiband filters. High gain also enables the demonstration of low-threshold on-chip lasers, which can be of relevance for a low-noise radio-frequency signal generation. These wide ranges of functionalities are made possible by the breakthrough on-chip gain makes Brillouin-based microwave photonic signal processing a promising approach for real-world implementation in the near future.
Broadband flux-pumped Josephson parametric amplifier with an on-chip coplanar waveguide impedance transformer

Peng Duan,Zhilong Jia,Chi Zhang,Lei Du,Haoran Tao,Xinxin Yang,Liangliang Guo,Yong Chen,Haifeng Zhang,Zhihao Peng,Weicheng Kong,Hai-Ou Li,Gang Cao,Guo-Ping Guo

DOI: https://doi.org/10.35848/1882-0786/abf029

IF: 2.819

2021-04-01

Applied Physics Express

Abstract:Abstract The rapid progress towards scalable quantum processors demands amplifiers with large bandwidths and high saturation powers. For this purpose, we present a broadband flux-pumped Josephson parametric amplifier integrated with an on-chip coplanar waveguide impedance transformer. Our device can be fabricated with simple and straightforward photo-lithography. This device experimentally achieves an operational bandwidth over 600 MHz with a gain above 15 dB, and a high saturation power with quantum-limited noise performance. In addition, the center frequency of this device can be tuned over several hundred megahertz, which in turn broadens the effective operational bandwidth to around 1 GHz.

physics, applied

High-Gain Regenerative Parametric Amplification On-Chip

High-Gain Parametric Amplification On-Chip at Low Pump Powers

Large regenerative parametric amplification on chip at ultra-low pump powers

X-Band High-Efficiency Continuous Class B Power Amplifier Gan Mmic Assisted By Input Second-Harmonic Tuning

Photonic chip-based continuous-travelling-wave parametric amplifier

A 68.5~90 GHz High-Gain Power Amplifier with Capacitive Stability Enhancement Technique in 0.13 Μm SiGe BiCMOS

A photonic integrated continuous-travelling-wave parametric amplifier

Mid-infrared optical parametric amplifier using silicon nanophotonic waveguides

Photonic Integrated Erbium-Doped Silicon Nitride Amplifiers with Intense Net Gain

High Power On-Chip Integrated Laser

High quantum efficiency parametric amplification via hybridized nonlinear optics

An ultra-broadband photonic-chip-based traveling-wave parametric amplifier

High-gain optical parametric amplification with continuous-wave pump using domain-engineered thin film lithium niobate waveguide

A Compact and Robust Regenerative Amplifier Pump Source for High Repetition Rate Terahertz Parametric Amplifier

Integrated Optical Parametric Amplifier with Record Gain

A 180 GHz High-Gain Cascode Amplifier in 130-Nm SiGe Process

Net-gain from a parametric amplifier on a chalcogenide optical chip

180 GHz high-gain cascode power amplifier in a 130 nm SiGe process

Polymer-Silica Hybrid On-Chip Amplifier with Vertical Pumping Method

Advanced Integrated Microwave Signal Processing with Giant On-Chip Brillouin Gain

Broadband flux-pumped Josephson parametric amplifier with an on-chip coplanar waveguide impedance transformer