High-Gain Parametric Amplification On-Chip at Low Pump Powers

Yun Zhao,Jae K. Jang,Xingchen Ji,Yoshitomo Okawachi,Michal Lipson,Alexander L. Gaeta

2023-01-01

Abstract:We demonstrate a novel amplification scheme that yields high (30-dB), continuous-wave parametric amplification of weak signals using small-footprint microresonators at pump power levels (< 10 mW) compatible with typical chip-scale lasers.

What problem does this paper attempt to address?

High-Gain Regenerative Parametric Amplification On-Chip

Yun Zhao,Jae K. Jang,Xingchen Ji,Yoshitomo Okawachi,Michal Lipson,Alexander L. Gaeta

DOI: https://doi.org/10.1364/nlo.2023.tu2a.1

2023-01-01

Abstract:We demonstrate a chip-based regenerative parametric amplifier with 30-dB continuous-wave gain and < 10-mW of pump power, which allows for on-chip material-independent gain using low-cost pump lasers.
Large regenerative parametric amplification on chip at ultra-low pump powers

Yun Zhao,Jae K. Jang,Xingchen Ji,Yoshitomo Okawachi,Michal Lipson,Alexander L. Gaeta

DOI: https://doi.org/10.48550/arXiv.2209.05589

2022-09-12

Optics

Abstract:Chip-based optical amplifiers can significantly expand the functionalities of photonic devices. In particular, optical-parametric amplifiers (OPAs), with engineerable gain-spectra, are well-suited for nonlinear-photonic applications. Chip-based OPAs typically require long waveguides that occupy a large footprint, and high pump powers that cannot be easily produced with chip-scale lasers. We theoretically and experimentally demonstrate a microresonator-assisted regenerative OPA that benefits from the large nonlinearity enhancement of microresonators and yields a high gain in a small footprint. We achieve 30-dB parametric gain with only 9 mW of cw-pump power and show that the gain spectrum can be engineered to cover telecom channels inaccessible with Er-based amplifiers. We further demonstrate the amplification of Kerr-soliton comb lines and the preservation of their phase properties. Additionally, we demonstrate amplification by injection locking of optical-parametric oscillators, which corresponds to a regenerative amplifier pumped above the oscillation threshold. Novel dispersion engineering techniques such as coupled cavities and higher-order-dispersion phase matching can further extend the tunability and spectral coverage of our amplification schemes. The combination of high gain, small footprint, low pump power, and flexible gain-spectra engineering of our regenerative OPA is ideal for amplifying signals from the nanowatt to microwatt regimes for portable or space-based devices where ultralow electrical power levels are required and can lead to important applications in on-chip optical- and microwave-frequency synthesis and precise timekeeping.
A High Linearity Class AB Power Amplifier for Sub-1 GHz Applications

Hanqi Gao,Xuepu Wu,Yiwei Yang,Kai Huang,Xiaopeng Yu,Yunshi Li

DOI: https://doi.org/10.1109/iws55252.2022.9977944

2022-01-01

Abstract:In this paper, a 400MHz class-AB power amplifier (PA) with high linearity and output power is presented. This two-stage PA consists of on-chip power transistors and off-chip tunable LC load networks for reducing the chip cost due to the low operating frequency. Based on the linearity-oriented optimization of matching networks, the iterative circuit/EM co-simulation of the integrated circuit, package, and PCB levels is accomplished to minimize the discrepancy between the simulation and measurement results. The design is implemented in 130 nm CMOS technology with a core area of 0.13 mm 2 . Measurement results show that the PA delivers an output 1-dB compression of 18.1 dBm under 2.5 V voltage supply. Moreover, it achieves a saturated power of 24.2 dBm with a maximum gain of 27.8 dB and power-added efficiency (PAE) of 43.8%.
Photonic chip-based continuous-travelling-wave parametric amplifier

Johann Riemensberger,Junqiu Liu,Nikolai Kuznetsov,Jijun He,Rui Ning Wang,Tobias J. Kippenberg

DOI: https://doi.org/10.48550/arXiv.2107.09582

2021-07-20

Optics

Abstract:The ability to amplify optical signals is of pivotal importance across science and technology. The development of optical amplifiers has revolutionized optical communications, which are today pervasively used in virtually all sensing and communication applications of coherent laser sources. In the telecommunication bands, optical amplifiers typically utilize gain media based on III-V semiconductors or rare-earth-doped fibers. Another way to amplify optical signals is to utilize the Kerr nonlinearity of optical fibers or waveguides via parametric processes. Such parametric amplifiers of travelling continuous wave have been originally developed in the microwave domain, and enable quantum-limited signal amplification with high peak gain, broadband gain spectrum tailored via dispersion control, and ability to enable phase sensitive amplification. Despite these advantages, optical amplifiers based on parametric gain have proven impractical in silica fibers due to the low Kerr nonlinearity. Recent advances in photonic integrated circuits have revived interest in parametric amplifiers due to the significantly increased nonlinearity in various integrated platforms. Yet, despite major progress, continuous-wave-pumped parametric amplifiers built on photonic chips have to date remained out of reach. Here we demonstrate a chip-based travelling-wave optical parametric amplifier with net signal gain in the continuous-wave regime. Using ultralow-loss, dispersion-engineered, meter-long, silicon nitride photonic integrated circuits that are tightly coiled on a photonic chip, we achieve a continuous parametric gain of 12 dB that exceeds both the on-chip optical propagation loss and fiber-chip-fiber coupling losses in the optical C-band.
A photonic integrated continuous-travelling-wave parametric amplifier

Johann Riemensberger,Nikolai Kuznetsov,Junqiu Liu,Jijun He,Rui Ning Wang,Tobias J. Kippenberg

DOI: https://doi.org/10.1038/s41586-022-05329-1

IF: 64.8

2022-12-01

Nature

Abstract:The ability to amplify optical signals is of pivotal importance across science and technology typically using rare-earth-doped fibres or gain media based on III–V semiconductors. A different physical process to amplify optical signals is to use the Kerr nonlinearity of optical fibres through parametric interactions 1,2 . Pioneering work demonstrated continuous-wave net-gain travelling-wave parametric amplification in fibres 3 , enabling, for example, phase-sensitive (that is, noiseless) amplification 4 , link span increase 5 , signal regeneration and nonlinear phase noise mitigation 6 . Despite great progress 7,8,9,10,11,12,13,14,15 , all photonic integrated circuit-based demonstrations of net parametric gain have necessitated pulsed lasers, limiting their practical use. Until now, only bulk micromachined periodically poled lithium niobate (PPLN) waveguide chips have achieved continuous-wave gain 16,17 , yet their integration with silicon-wafer-based photonic circuits has not been shown. Here we demonstrate a photonic-integrated-circuit-based travelling-wave optical parametric amplifier with net signal gain in the continuous-wave regime. Using ultralow-loss, dispersion-engineered, metre-long, Si 3 N 4 photonic integrated circuits 18 on a silicon chip of dimensions 5 × 5 mm 2 , we achieve a continuous parametric gain of 12 dB that exceeds both the on-chip optical propagation loss and fibre–chip–fibre coupling losses in the telecommunication C band. Our work demonstrates the potential of photonic-integrated-circuit-based parametric amplifiers that have lithographically controlled gain spectrum, compact footprint, resilience to optical feedback and quantum-limited performance, and can operate in the wavelength ranges from visible to mid-infrared and outside conventional rare-earth amplification bands.

multidisciplinary sciences
High quantum efficiency parametric amplification via hybridized nonlinear optics

Noah Flemens,Dylan Heberle,Jiaoyang Zheng,Devin J. Dean,Connor Davis,Kevin Zawilski,Peter G. Schunemann,Jeffrey Moses

DOI: https://doi.org/10.48550/arXiv.2207.04147

2022-07-09

Abstract:Parametric amplifiers have allowed breakthroughs in ultrafast, strong-field, and high-energy density laser science and are an essential tool for extending the frequency range of powerful emerging diode-pumped solid-state laser technology. However, their impact is limited by inherently low quantum efficiency due to nonuniform light extraction. Here we demonstrate a new type of parametric amplifier based on hybridized nonlinear optics. Hybridization of parametric amplification with idler second harmonic generation induces unusual evolution dynamics for a fully parametric amplifier - with saturating rather than cyclic gain - observed here for the first time. This allows highly uniform light extraction enabling unprecedented efficiency for a lossless amplifier with Gaussian-like intensity profiles - a 48-dB single-stage gain with 68% quantum efficiency and 44% pump-to-signal energy conversion - a several-fold improvement over the standard. Possessing both laser-like high quantum efficiency and the advantages of thermal-loading free parametric systems, this simple approach can be implemented widely and have significant impact by increasing several-fold the power available for science and industry.

Optics,Applied Physics
Mid-infrared optical parametric amplifier using silicon nanophotonic waveguides

Xiaoping Liu,Richard M. Osgood Jr.,Yurii A. Vlasov,William M. J. Green

DOI: https://doi.org/10.1038/nphoton.2010.119

2010-01-11

Abstract:All-optical signal processing is envisioned as an approach to dramatically decrease power consumption and speed up performance of next-generation optical telecommunications networks. Nonlinear optical effects, such as four-wave mixing (FWM) and parametric gain, have long been explored to realize all-optical functions in glass fibers. An alternative approach is to employ nanoscale engineering of silicon waveguides to enhance the optical nonlinearities by up to five orders of magnitude, enabling integrated chip-scale all-optical signal processing. Previously, strong two-photon absorption (TPA) of the telecom-band pump has been a fundamental and unavoidable obstacle, limiting parametric gain to values on the order of a few dB. Here we demonstrate a silicon nanophotonic optical parametric amplifier exhibiting gain as large as 25.4 dB, by operating the pump in the mid-IR near one-half the band-gap energy (E~0.55eV, lambda~2200nm), at which parasitic TPA-related absorption vanishes. This gain is high enough to compensate all insertion losses, resulting in 13 dB net off-chip amplification. Furthermore, dispersion engineering dramatically increases the gain bandwidth to more than 220 nm, all realized using an ultra-compact 4 mm silicon chip. Beyond its significant relevance to all-optical signal processing, the broadband parametric gain also facilitates the simultaneous generation of multiple on-chip mid-IR sources through cascaded FWM, covering a 500 nm spectral range. Together, these results provide a foundation for the construction of silicon-based room-temperature mid-IR light sources including tunable chip-scale parametric oscillators, optical frequency combs, and supercontinuum generators.

Optics
High Power On-Chip Integrated Laser

Yair Antman,Andres Gil-Molina,Ohad Westreich,Xingchen Ji,Alexander L. Gaeta,Michal Lipson

DOI: https://doi.org/10.1364/oe.528864

IF: 3.8

2024-01-01

Optics Express

Abstract:The lack of high power integrated lasers have been limiting silicon photonics. Despite much progress made in chip-scale laser integration, power remains below the level required for key applications. The main inhibiting factor for high power is the low energy efficiency at high pumping currents, dictated by the small size of the active device. Here we break this power limitation by demonstrating a platform that relies on the coupling of a broad-area multimode gain to a silicon-nitride feedback chip, which acts as an external cavity. The feedback provided by the silicon-nitride chip is routed through a ring resonator and a single-mode filter, thus causing the otherwise multimode-gain chip to concentrate its power into a single highly-coherent mode. Our device produces more than 150 mW of power and 400 kHz linewidth. We achieve these high-performance metrics while maintaining a small footprint of 3 mm^2.
High-gain optical parametric amplification with continuous-wave pump using domain-engineered thin film lithium niobate waveguide

Mengwen Chen,Chenyu Wang,Kunpeng Jia,Xiao-Hui Tian,Jie Tang,Chunxi Zhu,Xiaowen Gu,Zexing Zhao,Zikang Wang,Zhilin Ye,Ji Tang,Yong Zhang,Zhong Yan,Guang Qian,Biaobing Jin,Zhenlin Wang,Shi-Ning Zhu,Zhenda Xie

2024-11-16

Abstract:While thin film lithium niobate (TFLN) is known for efficient signal generation, on-chip signal amplification remains challenging from fully integrated optical communication circuits. Here we demonstrate the first continuous-wave-pump optical parametric amplification (OPA) using an x-cut domain-engineered TFLN waveguide, with high gain over the telecom band up to 13.9 dB, and test it for high signal-to-noise ratio signal amplification using a commercial optical communication module pair. Fabricated in wafer scale using common process as devices including modulators, this OPA device marks an important step in TFLN photonic integration.

Optics
Broadband flux-pumped Josephson parametric amplifier with an on-chip coplanar waveguide impedance transformer

Peng Duan,Zhilong Jia,Chi Zhang,Lei Du,Haoran Tao,Xinxin Yang,Liangliang Guo,Yong Chen,Haifeng Zhang,Zhihao Peng,Weicheng Kong,Hai-Ou Li,Gang Cao,Guo-Ping Guo

DOI: https://doi.org/10.35848/1882-0786/abf029

IF: 2.819

2021-04-01

Applied Physics Express

Abstract:Abstract The rapid progress towards scalable quantum processors demands amplifiers with large bandwidths and high saturation powers. For this purpose, we present a broadband flux-pumped Josephson parametric amplifier integrated with an on-chip coplanar waveguide impedance transformer. Our device can be fabricated with simple and straightforward photo-lithography. This device experimentally achieves an operational bandwidth over 600 MHz with a gain above 15 dB, and a high saturation power with quantum-limited noise performance. In addition, the center frequency of this device can be tuned over several hundred megahertz, which in turn broadens the effective operational bandwidth to around 1 GHz.

physics, applied
Polymer-Silica Hybrid On-Chip Amplifier with Vertical Pumping Method

Yue Cao,Baizhu Lin,Yue Sun,Yunji Yi,Yijun Liu,Jie Zheng,Fei Wang,Daming Zhang

DOI: https://doi.org/10.1038/s41598-018-31943-z

IF: 4.6

2018-01-01

Scientific Reports

Abstract:This article demonstrates a multilayer polymer-silica hybrid on-chip amplifier combining mode division multiplexing method. The multilayer amplifier consists of a pumping silica waveguide and an amplifying polymer waveguide. The pumping waveguide possesses the stability and the high damage threshold. The amplifying waveguide takes the advantages of the high compatibility and the high doping rate. The vertical pump of mode division multiplexing method can introduce the pumping light into the amplifying waveguide at any desired position of the chip. By the isolation method between signal and pumping light, the pumping light can be coupled into the amplifying waveguide, while the signal light cannot be coupled into the pumping waveguide. The parameters of doping rates, waveguide lengths, overlap factors, coupling parameters are calculated to optimize the gain characteristics of the amplifier. The amplifier with three position-optimized pumping light was designed achieving a maximum gain of 33.89 dB/cm with a waveguide length of 6 cm, a signal power of 0.1 mW and a pumping power of 300 mW. This polymer-silica hybrid amplifier is promising for the on-chip loss compensation of the 3D photonic integrated circuits and all optical transistors.
Quasi-static Optical Parametric Amplification

Marc Jankowski,Nayara Jornod,Carsten Langrock,Boris Desiatov,Alireza Marandi,Marko Lončar,Martin M. Fejer

DOI: https://doi.org/10.1364/OPTICA.442550

2022-04-02

Abstract:High-gain optical parametric amplification is an important nonlinear process used both as a source of coherent infrared light and as a source of nonclassical light. In this work, we experimentally demonstrate an approach to optical parametric amplification that enables extremely large parametric gains with low energy requirements. In conventional nonlinear media driven by femtosecond pulses, multiple dispersion orders limit the effective interaction length available for parametric amplification. Here, we use the dispersion engineering available in periodically poled thin-film lithium niobate nanowaveguides to eliminate several dispersion orders at once. The result is a quasi-static process; the large peak intensity associated with a short pump pulse can provide gain to signal photons without undergoing pulse distortion or temporal walk-off. We characterize the parametric gain available in these waveguides using optical parametric generation, where vacuum fluctuations are amplified to macroscopic intensities. When driven with pulse energies in excess of 10 pJ, we observe saturated parametric gains as large as 88 dB (146 dB/cm). The devices shown here achieve saturated optical parametric generation with orders of magnitude less pulse energy than previous techniques.

Optics,Quantum Physics
Gain and Noise Characteristics of High-Bit-rate Silicon Parametric Amplifiers.

Xinzhu Sang,Ozdal Boyraz

DOI: https://doi.org/10.1364/oe.16.013122

IF: 3.8

2008-01-01

Optics Express

Abstract:We report a numerical investigation on parametric amplification of high-bit-rate signals and related noise figure inside silicon waveguides in the presence of two-photon absorption (TPA), TPA-induced free-carrier absorption, free-carrier-induced dispersion and linear loss. Different pump parameters are considered to achieve net gain and low noise figure. We show that the net gain can only be achieved in the anomalous dispersion regime at the high-repetition-rate, if short pulses are used. An evaluation of noise properties of parametric amplification in silicon waveguides is presented. By choosing pulsed pump in suitably designed silicon waveguides, parametric amplification can be a chip-scale solution in the high-speed optical communication and optical signal processing systems.
High-Gain and Narrow-Bandwidth Optical Amplifier Via Optomechanical Four-Wave Mixing

Zongyang Li,Zhenqiang Ren,Yongmin Li,Yong-chun Liu,Kunchi Peng

DOI: https://doi.org/10.1103/physrevapplied.11.064048

IF: 4.6

2019-01-01

Physical Review Applied

Abstract:We present an ultrahigh gain, narrow bandwidth, and low noise optical amplifier via the radiation pressure induced by the four-wave mixing (FWM) effect based on a cavity optomechanical system in the unresolved sideband regime. It offers a favorable platform to amplify a weak signal field and simultaneously generate a conjugate field with tunable gain and bandwidth. We achieve an ultranarrow bandwidth (9 Hz) and ultrahigh gain (40 dB) optical field amplification at a weak pump power (10 mu W). Due to the unresolved sideband regime, the system supports simultaneous multimode amplification. The presented optomechanical FWM mechanism-based amplifier can provide standard quantum-noise-limit amplification, in principle, and is applicable to a broad range of the electromagnetic spectrum ranging from the microwave band to the ultraviolet band.
Reconfigurable Parametric Amplifications of Spoof Surface Plasmons

Xinxin Gao,Jingjing Zhang,Yu Luo,Qian Ma,Guo Dong Bai,Hao Chi Zhang,Tie Jun Cui

DOI: https://doi.org/10.1002/advs.202100795

IF: 15.1

2021-07-04

Advanced Science

Abstract:<p>Next-generation inter-chip communication requires ultrafast ultra-compact interconnects. Designer plasmonics offers a possible route towards this goal. Further development of the plasmonic technique to circuit applications requires the direct amplification of plasmonic signals on a compact platform. However, significant signal distortions and limited operational speeds prevent the application of traditional MOS-based amplifiers to plasmonics. Up to day, the amplification of surface plasmons without phase distortion has remained a scientific challenge. In this work, the concept of parametric amplification (PA) is transplanted to the plasmonics and is realized experimentally an ultrathin reconfigurable PA using a spoof surface plasmon polariton (SSPP) waveguide integrated with tunable and nonlinear varactors. The measured parametric gain in the experiment can reach up to 9.14 dB within a short nonlinear propagation length, for example, six SSPP wavelengths, in excellent agreement with the theoretical prediction. By tuning the bias voltage of varactors, the phase-matching condition can be precisely controlled over a broad frequency band, enabling the authors to realize the multi-frequency PA of plasmonic signals. Measured phase responses confirm that the plasmonic parametric amplifier can significantly suppress the signal distortions as compared with the traditional MOS-based amplifier, which is a property highly desired for ultrafast wireless communication systems and integrated circuits.</p>

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
High efficiency broadband parametric amplification assisted by second harmonic generation

Zhihao Wang,Lu Xu,Shuangxi Peng,Feilong Hu,Dong Zhao,Zuofei Hong,Qingbin Zhang,Peixiang Lu

DOI: https://doi.org/10.1016/j.optlastec.2024.111887

IF: 4.939

2024-10-11

Optics & Laser Technology

Abstract:In typical scenarios, quadratic nonlinear processes such as second harmonic generation (SHG) and sum frequency generation (SFG) that accompany optical parametric amplification (OPA) are often considered unfavorable parasitic effects. These effects can lead to a reduction in energy conversion efficiency during OPA. In this study, we demonstrate an approach to enhance OPA efficiency by eliminating the signal pulse through SHG in a simple collinear geometry while maintaining a broadband output using a femtosecond pump laser. The complete setup features a three-stage OPA system, with the final stage employing a hybrid OPA-SHG process that effectively suppresses back conversion, achieving up to 60.8 % pump depletion and 26.2 % pump-to-idler energy conversion, resulting in an idler energy of 0.97 mJ. By harnessing the capabilities of a broadband femtosecond pump and Type-I phase matching to enhance phase-matched bandwidth, we generated a 1.85-μm idler pulse with a near-transform-limited (TL) duration of 33.5 fs through compression in a silicon window. Furthermore, we maintained excellent beam quality and output power stability, with only 0.23 % root mean square (RMS) fluctuations over the course of one hour. This mid-IR laser source, operating at the millijoule (mJ) level and characterized by its high beam quality, is exceptionally well-suited for advancing attosecond and strong-field research.

optics,physics, applied
Flat‐Top Pumped Multi‐Millijoule Mid‐Infrared Parametric Chirped‐Pulse Amplifier at 10 Khz Repetition Rate

Xiao Zou,Wenkai Li,Shizhen Qu,Kun Liu,Hao Li,Qi Jie Wang,Ying Zhang,Houkun Liang

DOI: https://doi.org/10.1002/lpor.202000292

2021-01-01

Laser & Photonics Review

Abstract:The advancement of mid‐infrared (MIR) parametric amplification technique serves as the main driving force of multiple strong‐field experiments in the frontier of science such as the generation of coherent soft X‐ray and isolated attosecond pulses. However, the low parametric down‐conversion efficiency especially in the MIR wavelength is a major bottleneck that hinders the further exploration of the MIR‐laser‐driven strong‐field physics. Here, a simple and robust method that doubles the efficiency of a MIR optical parametric chirped‐pulse amplifier (OPCPA) is reported, as a demonstration of the concept, through engineering a flat‐top pump profile via high‐efficiency diffractive optical elements. With the proposed flat‐top pump scheme, a MIR OPCPA system at 3 μm and 10 kHz repetition rate with both the record pulse energy of 2.7 mJ and the highest average power at 27 W among the MIR OPCPAs with kHz repetition rate is demonstrated. This work provides a promising approach for achieving high energy high power MIR few‐cycle lasers that can be readily used in emerging strong field experiments. In addition, it is believed that the developed technique in this work can become a general method of parametric efficiency enhancement, which is applicable to other nonlinear conversions and wavelength ranges.
Overcoming the quantum limit of optical amplification in monolithic waveguides

Zhichao Ye,Ping Zhao,Krishna Twayana,Magnus Karlsson,Victor Torres-Company,Peter A. Andrekson

DOI: https://doi.org/10.48550/arXiv.2107.10632

2021-07-22

Abstract:Optical amplifiers are essential in numerous photonic applications. Parametric amplifiers, relying on a nonlinear material to create amplification, are uniquely promising as they can amplify without generating excess noise. Here, we demonstrate amplification based on the 3rd order nonlinearity in a single chip, while in addition reporting a noise figure significantly below the conventional quantum limit when operated in phase-sensitive mode. Our results show the potential of nanophotonics for realizing continuous-wave parametric amplification that can enable applications in optical communications, signal processing and quantum optics across a wide range of frequencies.

Optics
A Compact 60ghz Power Amplifier in 65nm CMOS Technology

Ling Liu,Song Ye,Weimin Wang,Wenying Ma

DOI: https://doi.org/10.1088/1742-6596/2221/1/012037

2022-01-01

Journal of Physics Conference Series

Abstract:Abstract A compact 60GHz power amplifier chip in 65nm CMOS technology of three-stage common source structure is presented. The first two amplifiers offer sufficient gain to pre-amplify the small input power. The third stage amplifier uses two sets of differential pairs to achieve power synthesis. On-chip transformer coupling is adopted to realize inter-stage impedance matching as well as input and output matching. The compact structure of on-chip transformer can reduce the chip size and improve the integration degree. The measured small signal gain at 60GHz of 22.3dB, the saturation power of 20.2dBm, the output P-1dB of 17.3dBm, the PAE of 14%, and the core area is 0.19mm2. The power amplifier can be used in high-speed short-range wireless communication system to enhance communication data transmission capacity.
An ultra-broadband photonic-chip-based traveling-wave parametric amplifier

Nikolai Kuznetsov,Alberto Nardi,Johann Riemensberger,Alisa Davydova,Mikhail Churaev,Paul Seidler,Tobias J. Kippenberg

2024-11-02

Abstract:Optical amplification, crucial for modern communication and data center interconnects, primarily relies on erbium-doped fiber amplifiers (EDFAs) to enhance signals without distortion. While EDFAs were historically decisive for the introduction of dense wavelength-division multiplexing, they only cover a portion of the low-loss spectrum of optical fibers. Pioneering work on optical traveling-wave parametric amplifiers (TWPAs) utilizing intrinsic third-order optical nonlinearity has led to demonstrations of increased channel capacity and performance. TWPAs are unidirectional, offer high gain, and can reach the 3-dB quantum limit for phase-preserving amplifiers. Despite the use of highly nonlinear fibers or bulk waveguides, their power requirements and technical complexity have impeded adoption. In contrast, TWPAs based on photonic integrated circuits (PICs) offer the advantages of substantially increased mode confinement and optical nonlinearity but have been limited in bandwidth because of the trade-off with maintaining low propagation loss. We overcome this challenge by using low-loss gallium phosphide-on-silicon dioxide PICs and attain up to 35~dB of parametric gain with waveguides only a few centimeters long in a compact footprint of 0.25 square millimeters. Fiber-to-fiber net gain exceeding 10 dB across a bandwidth of approximately 140 nm is achieved, surpassing the gain window of a standard C-band EDFA. We furthermore demonstrate the capability to handle weak signals; input powers can range over six orders of magnitude while maintaining a low noise figure. We exploit these performance characteristics to amplify both optical frequency combs and coherent communication signals. This marks the first ultra-broadband, high-gain, continuous-wave amplification in a PIC, opening up new capabilities for next-generation optical communication, metrology, and sensing.

Optics,Applied Physics

High-Gain Parametric Amplification On-Chip at Low Pump Powers

High-Gain Regenerative Parametric Amplification On-Chip

Large regenerative parametric amplification on chip at ultra-low pump powers

A High Linearity Class AB Power Amplifier for Sub-1 GHz Applications

Photonic chip-based continuous-travelling-wave parametric amplifier

A photonic integrated continuous-travelling-wave parametric amplifier

High quantum efficiency parametric amplification via hybridized nonlinear optics

Mid-infrared optical parametric amplifier using silicon nanophotonic waveguides

High Power On-Chip Integrated Laser

High-gain optical parametric amplification with continuous-wave pump using domain-engineered thin film lithium niobate waveguide

Broadband flux-pumped Josephson parametric amplifier with an on-chip coplanar waveguide impedance transformer

Polymer-Silica Hybrid On-Chip Amplifier with Vertical Pumping Method

Quasi-static Optical Parametric Amplification

Gain and Noise Characteristics of High-Bit-rate Silicon Parametric Amplifiers.

High-Gain and Narrow-Bandwidth Optical Amplifier Via Optomechanical Four-Wave Mixing

Reconfigurable Parametric Amplifications of Spoof Surface Plasmons

High efficiency broadband parametric amplification assisted by second harmonic generation

Flat‐Top Pumped Multi‐Millijoule Mid‐Infrared Parametric Chirped‐Pulse Amplifier at 10 Khz Repetition Rate

Overcoming the quantum limit of optical amplification in monolithic waveguides

A Compact 60ghz Power Amplifier in 65nm CMOS Technology

An ultra-broadband photonic-chip-based traveling-wave parametric amplifier