Integrated Optical Parametric Amplifier with Record Gain

Junjie Xiao,Di Xia,Liyang Luo,Zhaohui Li,Bin Zhang

DOI: https://doi.org/10.1364/ofc.2024.th1d.4

2024-01-01

Abstract:We report an innovative phase-sensitive optical amplification using GeSbS microresonators, obtaining 31.5 dB gain with 8.5 mW CW-pump power in phase-insensitive mode, a 4.95 dB additional gain and 18.9 dB extinction ratio in phase-sensitive mode.

What problem does this paper attempt to address?

A 68.5~90 GHz High-Gain Power Amplifier with Capacitive Stability Enhancement Technique in 0.13 Μm SiGe BiCMOS

Yiming Yu,Jia Cao,Zhirui Zong,Pan Tang,Kai Yi,Chenxi Zhao,Huihua Liu,Yunqiu Wu,Wen-Yan Yin,Kai Kang

DOI: https://doi.org/10.1109/tmtt.2020.3019292

IF: 4.3

2020-01-01

IEEE Transactions on Microwave Theory and Techniques

Abstract:This article presents a wideband millimeter-wave power amplifier (PA) with a capacitive stability enhancement technique. It is composed of three differential cascode stages to attain high-power gain and large output power. To ensure the stabilization of the amplifier, a robust technique based on a series base capacitor is proposed and applied in each stage. Each capacitor creates a low-frequency zero to adjust the phase and amplitude responses of the differential cascode structure. As a result, the phase margin of the loop gain is increased remarkably. By adjusting the series base capacitors, the low-frequency zeros and gains of the three stages can be optimized. Therefore, the operating bandwidth is also extended. Meanwhile, a transformer-based four-path power combination network with a large current capacity is developed to further enlarge the output power. The circuit is demonstrated in a commercial 0.13 μm SiGe BiCMOS process. According to the measurement results, the PA obtains a saturated output power (P Sat ) of 18.5 dBm and output referred 1-dB compression point (OP 1dB ) of 16.32 dBm at 77 GHz. The tested small-signal gain is 26.7 dB at 77 GHz. Its 3 dB gain bandwidth is beyond 21.5 GHz, which ranges from 68.5 to 90 GHz. The P Sat variation is less than 0.57 dB at the frequency range from 70 to 85 GHz. The measurement also shows the PA with the proposed technique is unconditionally stable over the entire frequency band. The chip area is only 0.684 mm 2 .
Ultra-flat and Broadband Two-Pump Optical Parametric Amplifiers Using a Single-Section Highly Nonlinear Fiber

Yu Tian,Xiaosheng Xiao,Shiming Gao,Si Lu,Changxi Yang

DOI: https://doi.org/10.1016/j.optcom.2006.01.014

IF: 2.4

2006-01-01

Optics Communications

Abstract:A broadband two-pump optical parametric amplifier with ultra-flat gain spectra is proposed in a single-section highly nonlinear fiber. By elaborately setting the dispersions and pump wavelength space, a gain over 250nm with 0.02-dB uniformity is obtained. The pump polarizations and fiber length can be changed, achieving polarization-insensitive or higher gain, while the flatness and bandwidth of gain curve remain the same.
Mid-infrared optical parametric amplifier using silicon nanophotonic waveguides

Xiaoping Liu,Richard M. Osgood Jr.,Yurii A. Vlasov,William M. J. Green

DOI: https://doi.org/10.1038/nphoton.2010.119

2010-01-11

Abstract:All-optical signal processing is envisioned as an approach to dramatically decrease power consumption and speed up performance of next-generation optical telecommunications networks. Nonlinear optical effects, such as four-wave mixing (FWM) and parametric gain, have long been explored to realize all-optical functions in glass fibers. An alternative approach is to employ nanoscale engineering of silicon waveguides to enhance the optical nonlinearities by up to five orders of magnitude, enabling integrated chip-scale all-optical signal processing. Previously, strong two-photon absorption (TPA) of the telecom-band pump has been a fundamental and unavoidable obstacle, limiting parametric gain to values on the order of a few dB. Here we demonstrate a silicon nanophotonic optical parametric amplifier exhibiting gain as large as 25.4 dB, by operating the pump in the mid-IR near one-half the band-gap energy (E~0.55eV, lambda~2200nm), at which parasitic TPA-related absorption vanishes. This gain is high enough to compensate all insertion losses, resulting in 13 dB net off-chip amplification. Furthermore, dispersion engineering dramatically increases the gain bandwidth to more than 220 nm, all realized using an ultra-compact 4 mm silicon chip. Beyond its significant relevance to all-optical signal processing, the broadband parametric gain also facilitates the simultaneous generation of multiple on-chip mid-IR sources through cascaded FWM, covering a 500 nm spectral range. Together, these results provide a foundation for the construction of silicon-based room-temperature mid-IR light sources including tunable chip-scale parametric oscillators, optical frequency combs, and supercontinuum generators.

Optics
A photonic integrated continuous-travelling-wave parametric amplifier

Johann Riemensberger,Nikolai Kuznetsov,Junqiu Liu,Jijun He,Rui Ning Wang,Tobias J. Kippenberg

DOI: https://doi.org/10.1038/s41586-022-05329-1

IF: 64.8

2022-12-01

Nature

Abstract:The ability to amplify optical signals is of pivotal importance across science and technology typically using rare-earth-doped fibres or gain media based on III–V semiconductors. A different physical process to amplify optical signals is to use the Kerr nonlinearity of optical fibres through parametric interactions 1,2 . Pioneering work demonstrated continuous-wave net-gain travelling-wave parametric amplification in fibres 3 , enabling, for example, phase-sensitive (that is, noiseless) amplification 4 , link span increase 5 , signal regeneration and nonlinear phase noise mitigation 6 . Despite great progress 7,8,9,10,11,12,13,14,15 , all photonic integrated circuit-based demonstrations of net parametric gain have necessitated pulsed lasers, limiting their practical use. Until now, only bulk micromachined periodically poled lithium niobate (PPLN) waveguide chips have achieved continuous-wave gain 16,17 , yet their integration with silicon-wafer-based photonic circuits has not been shown. Here we demonstrate a photonic-integrated-circuit-based travelling-wave optical parametric amplifier with net signal gain in the continuous-wave regime. Using ultralow-loss, dispersion-engineered, metre-long, Si 3 N 4 photonic integrated circuits 18 on a silicon chip of dimensions 5 × 5 mm 2 , we achieve a continuous parametric gain of 12 dB that exceeds both the on-chip optical propagation loss and fibre–chip–fibre coupling losses in the telecommunication C band. Our work demonstrates the potential of photonic-integrated-circuit-based parametric amplifiers that have lithographically controlled gain spectrum, compact footprint, resilience to optical feedback and quantum-limited performance, and can operate in the wavelength ranges from visible to mid-infrared and outside conventional rare-earth amplification bands.

multidisciplinary sciences
High-energy Single-Longitudinal-mode Mid-Infrared Optical Parametric Amplifier Seeded with Sheet Optical Parametric Oscillator

Xiaohan Wang,Kunpeng Jia,Hongquan Yao,Jun Zhou,Xinjie Lv,Gang Zhao,Zhenda Xie,Shining Zhu

DOI: https://doi.org/10.1063/5.0049754

IF: 1.697

2021-01-01

AIP Advances

Abstract:Mid-infrared (MIR) radiation is essential for remote gas sensing, ranging, and lidar applications, where high pulse energy and narrow linewidth are the keys to the high sensitivity over long distance. However, complex optical and electronic locking schemes are normally required to achieve both features at the same time. Here, we demonstrate pulse-pumped single-longitudinal-mode (SLM) MIR generation using a microresonator seed in the form of a sheet optical parametric oscillator (SOPO). The SOPO features a sub-coherence-length thickness of 400 µm, which enables SLM and high-energy oscillation using cavity phase matching. Its output around 1.55 µm is seeded into an optical parametric amplifier and locks the MIR output in SLM at 3.38 µm. In a simple and compact setup, up to 21% conversion efficiency and 22% slope efficiency are measured with a MIR output energy of 54 µJ. This SLM MIR source with the SOPO seed greatly reduces the system size and is compatible for further integration for field-deployable devices and thus has broad applications in the field of remote gas sensing.
Quasi-static Optical Parametric Amplification

Marc Jankowski,Nayara Jornod,Carsten Langrock,Boris Desiatov,Alireza Marandi,Marko Lončar,Martin M. Fejer

DOI: https://doi.org/10.1364/OPTICA.442550

2022-04-02

Abstract:High-gain optical parametric amplification is an important nonlinear process used both as a source of coherent infrared light and as a source of nonclassical light. In this work, we experimentally demonstrate an approach to optical parametric amplification that enables extremely large parametric gains with low energy requirements. In conventional nonlinear media driven by femtosecond pulses, multiple dispersion orders limit the effective interaction length available for parametric amplification. Here, we use the dispersion engineering available in periodically poled thin-film lithium niobate nanowaveguides to eliminate several dispersion orders at once. The result is a quasi-static process; the large peak intensity associated with a short pump pulse can provide gain to signal photons without undergoing pulse distortion or temporal walk-off. We characterize the parametric gain available in these waveguides using optical parametric generation, where vacuum fluctuations are amplified to macroscopic intensities. When driven with pulse energies in excess of 10 pJ, we observe saturated parametric gains as large as 88 dB (146 dB/cm). The devices shown here achieve saturated optical parametric generation with orders of magnitude less pulse energy than previous techniques.

Optics,Quantum Physics
Integrated Broadband Lithium Niobate Optical Parametric Amplifier

He Gao,Jizhi Zhang,Siyuan Wang,Zejie Yu,Liu Liu,Daoxin Dai

DOI: https://doi.org/10.1109/ACP/POEM59049.2023.10368937

2023-01-01

Abstract:Integrated optical amplifier is a key component for the development of large-scale integrated optical systems. Here we propose and demonstrate an integrated broadband optical parametric amplifier by second-order nonlinear wavelength conversion on a thin-film lithium niobate on insulator platform. The analytical results show the designed optical parametric amplifier can realize an optical gain of more than 20 dB and a 3-dB gain bandwidth of more than 180 nm under the pump light of wavelength 798 nm and power 25 dBm. Experimentally, an optical gain of ∼18.11 dB for signal light at 1550 nm is observed.
Net-gain from a parametric amplifier on a chalcogenide optical chip

Michael R E Lamont,Barry Luther-Davies,Duk-Yong Choi,Steve Madden,Xin Gai,Benjamin J Eggleton

DOI: https://doi.org/10.1364/oe.16.020374

2008-12-08

Abstract:We report first observation of net-gain from an optical parametric amplifier in a planar waveguide. This was achieved in a low-loss As(2)S(3) planar waveguide, with a strong nonlinearity (gamma approximately 10 /W/m) and tailored anomalous dispersion yielding efficient Raman-assisted four-wave mixing at telecom wavelengths. The experiments were in good agreement with theory, and indicate a peak net-gain greater than +16 dB for the signal and idler (+30 dB neglecting coupling losses) and a broad bandwidth spanning 180 nm.
Large regenerative parametric amplification on chip at ultra-low pump powers

Yun Zhao,Jae K. Jang,Xingchen Ji,Yoshitomo Okawachi,Michal Lipson,Alexander L. Gaeta

DOI: https://doi.org/10.48550/arXiv.2209.05589

2022-09-12

Optics

Abstract:Chip-based optical amplifiers can significantly expand the functionalities of photonic devices. In particular, optical-parametric amplifiers (OPAs), with engineerable gain-spectra, are well-suited for nonlinear-photonic applications. Chip-based OPAs typically require long waveguides that occupy a large footprint, and high pump powers that cannot be easily produced with chip-scale lasers. We theoretically and experimentally demonstrate a microresonator-assisted regenerative OPA that benefits from the large nonlinearity enhancement of microresonators and yields a high gain in a small footprint. We achieve 30-dB parametric gain with only 9 mW of cw-pump power and show that the gain spectrum can be engineered to cover telecom channels inaccessible with Er-based amplifiers. We further demonstrate the amplification of Kerr-soliton comb lines and the preservation of their phase properties. Additionally, we demonstrate amplification by injection locking of optical-parametric oscillators, which corresponds to a regenerative amplifier pumped above the oscillation threshold. Novel dispersion engineering techniques such as coupled cavities and higher-order-dispersion phase matching can further extend the tunability and spectral coverage of our amplification schemes. The combination of high gain, small footprint, low pump power, and flexible gain-spectra engineering of our regenerative OPA is ideal for amplifying signals from the nanowatt to microwatt regimes for portable or space-based devices where ultralow electrical power levels are required and can lead to important applications in on-chip optical- and microwave-frequency synthesis and precise timekeeping.
Amplification Assisted Optical Parametric Oscillator in the Mid-Infrared Region

Y. H. Liu,X. J. Lv,Z. D. Xie,X. P. Hu,Y. Yuan,J. Lu,L. N. Zhao,G. Zhao,S. N. Zhu

DOI: https://doi.org/10.1007/s00340-011-4695-9

2011-01-01

Abstract:We demonstrate a high efficiency mid-infrared laser source based on optical parametric oscillator (OPO) assisted by an intracavity optical parametric amplification (OPA). The OPA-assisted-OPO scheme was realized in one piece of commensurable dual-periodic superlattice in which the signal light generated from the OPO process serves as the pump light for the OPA process. A maximum output power of 508 mW at 3.92 μm was achieved under a pump power of 2.85 W at 1.064 μm. The pump-to-idler conversion efficiency is 17.8% and the slope efficiency is 23.8%, and the enhancements of them are 58.9% and 67.6%, respectively, comparing with the standard OPO scheme.
Photonic chip-based continuous-travelling-wave parametric amplifier

Johann Riemensberger,Junqiu Liu,Nikolai Kuznetsov,Jijun He,Rui Ning Wang,Tobias J. Kippenberg

DOI: https://doi.org/10.48550/arXiv.2107.09582

2021-07-20

Optics

Abstract:The ability to amplify optical signals is of pivotal importance across science and technology. The development of optical amplifiers has revolutionized optical communications, which are today pervasively used in virtually all sensing and communication applications of coherent laser sources. In the telecommunication bands, optical amplifiers typically utilize gain media based on III-V semiconductors or rare-earth-doped fibers. Another way to amplify optical signals is to utilize the Kerr nonlinearity of optical fibers or waveguides via parametric processes. Such parametric amplifiers of travelling continuous wave have been originally developed in the microwave domain, and enable quantum-limited signal amplification with high peak gain, broadband gain spectrum tailored via dispersion control, and ability to enable phase sensitive amplification. Despite these advantages, optical amplifiers based on parametric gain have proven impractical in silica fibers due to the low Kerr nonlinearity. Recent advances in photonic integrated circuits have revived interest in parametric amplifiers due to the significantly increased nonlinearity in various integrated platforms. Yet, despite major progress, continuous-wave-pumped parametric amplifiers built on photonic chips have to date remained out of reach. Here we demonstrate a chip-based travelling-wave optical parametric amplifier with net signal gain in the continuous-wave regime. Using ultralow-loss, dispersion-engineered, meter-long, silicon nitride photonic integrated circuits that are tightly coiled on a photonic chip, we achieve a continuous parametric gain of 12 dB that exceeds both the on-chip optical propagation loss and fiber-chip-fiber coupling losses in the optical C-band.
High quantum efficiency parametric amplification via hybridized nonlinear optics

Noah Flemens,Dylan Heberle,Jiaoyang Zheng,Devin J. Dean,Connor Davis,Kevin Zawilski,Peter G. Schunemann,Jeffrey Moses

DOI: https://doi.org/10.48550/arXiv.2207.04147

2022-07-09

Abstract:Parametric amplifiers have allowed breakthroughs in ultrafast, strong-field, and high-energy density laser science and are an essential tool for extending the frequency range of powerful emerging diode-pumped solid-state laser technology. However, their impact is limited by inherently low quantum efficiency due to nonuniform light extraction. Here we demonstrate a new type of parametric amplifier based on hybridized nonlinear optics. Hybridization of parametric amplification with idler second harmonic generation induces unusual evolution dynamics for a fully parametric amplifier - with saturating rather than cyclic gain - observed here for the first time. This allows highly uniform light extraction enabling unprecedented efficiency for a lossless amplifier with Gaussian-like intensity profiles - a 48-dB single-stage gain with 68% quantum efficiency and 44% pump-to-signal energy conversion - a several-fold improvement over the standard. Possessing both laser-like high quantum efficiency and the advantages of thermal-loading free parametric systems, this simple approach can be implemented widely and have significant impact by increasing several-fold the power available for science and industry.

Optics,Applied Physics
An ultra-broadband photonic-chip-based traveling-wave parametric amplifier

Nikolai Kuznetsov,Alberto Nardi,Johann Riemensberger,Alisa Davydova,Mikhail Churaev,Paul Seidler,Tobias J. Kippenberg

2024-11-02

Abstract:Optical amplification, crucial for modern communication and data center interconnects, primarily relies on erbium-doped fiber amplifiers (EDFAs) to enhance signals without distortion. While EDFAs were historically decisive for the introduction of dense wavelength-division multiplexing, they only cover a portion of the low-loss spectrum of optical fibers. Pioneering work on optical traveling-wave parametric amplifiers (TWPAs) utilizing intrinsic third-order optical nonlinearity has led to demonstrations of increased channel capacity and performance. TWPAs are unidirectional, offer high gain, and can reach the 3-dB quantum limit for phase-preserving amplifiers. Despite the use of highly nonlinear fibers or bulk waveguides, their power requirements and technical complexity have impeded adoption. In contrast, TWPAs based on photonic integrated circuits (PICs) offer the advantages of substantially increased mode confinement and optical nonlinearity but have been limited in bandwidth because of the trade-off with maintaining low propagation loss. We overcome this challenge by using low-loss gallium phosphide-on-silicon dioxide PICs and attain up to 35~dB of parametric gain with waveguides only a few centimeters long in a compact footprint of 0.25 square millimeters. Fiber-to-fiber net gain exceeding 10 dB across a bandwidth of approximately 140 nm is achieved, surpassing the gain window of a standard C-band EDFA. We furthermore demonstrate the capability to handle weak signals; input powers can range over six orders of magnitude while maintaining a low noise figure. We exploit these performance characteristics to amplify both optical frequency combs and coherent communication signals. This marks the first ultra-broadband, high-gain, continuous-wave amplification in a PIC, opening up new capabilities for next-generation optical communication, metrology, and sensing.

Optics,Applied Physics
Microstructure-Fibre-Based Optical Parametric Amplification in Telecom Band with Ultra-High Gain Slope

Zhang Wei,Xiao Li,Zhang Lei,Huang Yi-Dong,Peng Jiang-De

DOI: https://doi.org/10.1088/0256-307x/23/5/038

2006-01-01

Chinese Physics Letters

Abstract:We report a microstructure-fibre-based parametric amplification experiment in telecom band with ultra-high gain slope. A peak on-off gain of 52.3 dB is achieved using 25 m high nonlinear microstructure fibre (MF) and only 5.3 W pump power. The parametric gain slope is up to 580 dBW−1km−1. From the experimental data, the linear coefficient of the MF is estimated to be about 66.7 W−1km−1. The experiment shows the great potential of MFs in practical fibre parametric amplifiers.
Broad-band optical parametric gain on a silicon photonic chip

Mark A Foster,Amy C Turner,Jay E Sharping,Bradley S Schmidt,Michal Lipson,Alexander L Gaeta

DOI: https://doi.org/10.1038/nature04932

IF: 64.8

2006-06-22

Nature

Abstract:Developing an optical amplifier on silicon is essential for the success of silicon-on-insulator (SOI) photonic integrated circuits. Recently, optical gain with a 1-nm bandwidth was demonstrated using the Raman effect, which led to the demonstration of a Raman oscillator, lossless optical modulation and optically tunable slow light. A key strength of optical communications is the parallelism of information transfer and processing onto multiple wavelength channels. However, the relatively narrow Raman gain bandwidth only allows for amplification or generation of a single wavelength channel. If broad gain bandwidths were to be demonstrated on silicon, then an array of wavelength channels could be generated and processed, representing a critical advance for densely integrated photonic circuits. Here we demonstrate net on/off gain over a wavelength range of 28 nm through the optical process of phase-matched four-wave mixing in suitably designed SOI channel waveguides. We also demonstrate wavelength conversion in the range 1,511-1,591 nm with peak conversion efficiencies of +5.2 dB, which represents more than 20 times improvement on previous four-wave-mixing efficiencies in SOI waveguides. These advances allow for the implementation of dense wavelength division multiplexing in an all-silicon photonic integrated circuit. Additionally, all-optical delays, all-optical switches, optical signal regenerators and optical sources for quantum information technology, all demonstrated using four-wave mixing in silica fibres, can now be transferred to the SOI platform.
A photonic integrated circuit based erbium-doped amplifier

Yang Liu,Zheru Qiu,Xinru Ji,Jijun He,Johann Riemensberger,Martin Hafermann,Rui Ning Wang,Junqiu Liu,Carsten Ronning,Tobias J. Kippenberg

DOI: https://doi.org/10.1126/science.abo2631

2022-04-13

Abstract:Erbium-doped fiber amplifiers have revolutionized long-haul optical communications and laser technology. Erbium ions could equally provide a basis for efficient optical amplification in photonic integrated circuits. However, this approach has thus far remained impractical due to insufficient output power. Here, we demonstrate a photonic integrated circuit based erbium amplifier reaching 145 mW output power and more than 30 dB small-signal gain -- on par with commercial fiber amplifiers and beyond state-of-the-art III-V heterogeneously integrated semiconductor amplifiers. We achieve this by applying ion implantation to recently emerged ultralow-loss Si3N4 photonic integrated circuits with meter-scale-length waveguides. We utilize the device to increase by 100-fold the output power of soliton microcombs, required for low-noise photonic microwave generation or as a source for wavelength-division multiplexed optical communications. Endowing Si3N4 photonic integrated circuits with gain enables the miniaturization of a wide range of fiber-based devices such as high-pulse-energy femtosecond mode-locked lasers.

Optics,Applied Physics
100 dB/cm broadband optical parametric amplification in dispersion engineered nanophotonic lithium niobate waveguides

Luis Ledezma,Ryoto Sekine,Qiushi Guo,Rajveer Nehra,Saman Jahani,Alireza Marandi

DOI: https://doi.org/10.1364/cleo_si.2021.sf1c.7

2021-01-01

Abstract:We demonstrate phase-sensitive amplification and confirm aga in exceeding 100 dB/cm on a dispersion-engineered thin-film lithium niobate waveguide, using less than 20 pJ of pump energy, and exhibiting a gain bandwidth larger than 600 nm around 2.09 μm.
High efficiency broadband parametric amplification assisted by second harmonic generation

Zhihao Wang,Lu Xu,Shuangxi Peng,Feilong Hu,Dong Zhao,Zuofei Hong,Qingbin Zhang,Peixiang Lu

DOI: https://doi.org/10.1016/j.optlastec.2024.111887

IF: 4.939

2024-10-11

Optics & Laser Technology

Abstract:In typical scenarios, quadratic nonlinear processes such as second harmonic generation (SHG) and sum frequency generation (SFG) that accompany optical parametric amplification (OPA) are often considered unfavorable parasitic effects. These effects can lead to a reduction in energy conversion efficiency during OPA. In this study, we demonstrate an approach to enhance OPA efficiency by eliminating the signal pulse through SHG in a simple collinear geometry while maintaining a broadband output using a femtosecond pump laser. The complete setup features a three-stage OPA system, with the final stage employing a hybrid OPA-SHG process that effectively suppresses back conversion, achieving up to 60.8 % pump depletion and 26.2 % pump-to-idler energy conversion, resulting in an idler energy of 0.97 mJ. By harnessing the capabilities of a broadband femtosecond pump and Type-I phase matching to enhance phase-matched bandwidth, we generated a 1.85-μm idler pulse with a near-transform-limited (TL) duration of 33.5 fs through compression in a silicon window. Furthermore, we maintained excellent beam quality and output power stability, with only 0.23 % root mean square (RMS) fluctuations over the course of one hour. This mid-IR laser source, operating at the millijoule (mJ) level and characterized by its high beam quality, is exceptionally well-suited for advancing attosecond and strong-field research.

optics,physics, applied
On-chip parametric amplification with 26.5~dB gain at telecommunication wavelengths using CMOS-compatible hydrogenated amorphous silicon waveguides

Bart Kuyken,Stéphane Clemmen,Shankar Kumar Selvaraja,Wim Bogaerts,Dries Van Thourhout,Philippe Emplit,Serge Massar,Gunther Roelkens,Roel Baets

DOI: https://doi.org/10.1364/OL.36.000552

2011-02-05

Abstract:We present the first study of parametric amplification in hydrogenated amorphous silicon waveguides. Broadband on/off amplification up to 26.5~dB at telecom wavelength is reported. Measured nonlinear parameter is 770~$\textrm{W}^{-1} \textrm{m}^{-1}$, nonlinear absorption 28~$\textrm{W}^{-1} \textrm{m}^{-1}$, bandgap $1.61$~eV.

Optics
Mid-infrared continuous wave parametric amplification in tapered chalcogenide microstructured fibers

Sida Xing,Davide Grassani,Svyatoslav Kharitonov,Laurent Brilland,Céline Caillaud,Johann Trolès,Camille-Sophie Brès

DOI: https://doi.org/10.48550/arXiv.1612.00707

2016-12-02

Abstract:As photon mixing is not inherently limited to any specific spectral region, parametric processes represent a compelling solution for all-optical signal processing in spectral windows not easily accessible by other technologies. Particularly, the continuous-wave pumping scheme is essential for any application requiring modulated signals or precise spectroscopic characterization. Highly nonlinear fibers enabled record performances for wavelength conversion and amplification in the telecommunication band, however no waveguiding platforms have yet solved the trade-off between high-nonlinearity, low propagation losses and dispersion in the mid-infrared. Here, we show mid-infrared continuous-wave parametric amplification in a GeAsSe fiber. Leveraging state-of-the-art fabrication techniques, a novel tapered photonic crystal fiber geometry enabling 4.5 dB signal amplification and 2 dB idler conversion efficiency is experimentally demonstrated using only 125 mW of pump in the 2 micron wavelength range. This result is not only the first ever continuous-wave parametric amplification measured at 2 micron, in any waveguide, but also establishes GeAsSe PCF tapers as the most promising all-fibered, high efficiency continuous-wave parametric converter for advanced applications in the mid-infrared.

Optics

Integrated Optical Parametric Amplifier with Record Gain

A 68.5~90 GHz High-Gain Power Amplifier with Capacitive Stability Enhancement Technique in 0.13 Μm SiGe BiCMOS

Ultra-flat and Broadband Two-Pump Optical Parametric Amplifiers Using a Single-Section Highly Nonlinear Fiber

Mid-infrared optical parametric amplifier using silicon nanophotonic waveguides

A photonic integrated continuous-travelling-wave parametric amplifier

High-energy Single-Longitudinal-mode Mid-Infrared Optical Parametric Amplifier Seeded with Sheet Optical Parametric Oscillator

Quasi-static Optical Parametric Amplification

Integrated Broadband Lithium Niobate Optical Parametric Amplifier

Net-gain from a parametric amplifier on a chalcogenide optical chip

Large regenerative parametric amplification on chip at ultra-low pump powers

Amplification Assisted Optical Parametric Oscillator in the Mid-Infrared Region

Photonic chip-based continuous-travelling-wave parametric amplifier

High quantum efficiency parametric amplification via hybridized nonlinear optics

An ultra-broadband photonic-chip-based traveling-wave parametric amplifier

Microstructure-Fibre-Based Optical Parametric Amplification in Telecom Band with Ultra-High Gain Slope

Broad-band optical parametric gain on a silicon photonic chip

A photonic integrated circuit based erbium-doped amplifier

100 dB/cm broadband optical parametric amplification in dispersion engineered nanophotonic lithium niobate waveguides

High efficiency broadband parametric amplification assisted by second harmonic generation

On-chip parametric amplification with 26.5~dB gain at telecommunication wavelengths using CMOS-compatible hydrogenated amorphous silicon waveguides

Mid-infrared continuous wave parametric amplification in tapered chalcogenide microstructured fibers