On-chip parametric amplification with 26.5~dB gain at telecommunication wavelengths using CMOS-compatible hydrogenated amorphous silicon waveguides

Bart Kuyken,Stéphane Clemmen,Shankar Kumar Selvaraja,Wim Bogaerts,Dries Van Thourhout,Philippe Emplit,Serge Massar,Gunther Roelkens,Roel Baets
DOI: https://doi.org/10.1364/OL.36.000552
2011-02-05
Abstract:We present the first study of parametric amplification in hydrogenated amorphous silicon waveguides. Broadband on/off amplification up to 26.5~dB at telecom wavelength is reported. Measured nonlinear parameter is 770~$\textrm{W}^{-1} \textrm{m}^{-1}$, nonlinear absorption 28~$\textrm{W}^{-1} \textrm{m}^{-1}$, bandgap $1.61$~eV.
Optics
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