Abstract:Neuromorphic devices represent a frontier in technological development, aiming to emulate the intricate parallel functionalities inherent to the human brain [1, 2]. Traditional computing models, such as Von Neumann architecture, grapple with limitations in parallel processing, prompting the exploration of neuromorphic computing to integrate memory and processing efficiently. Our research presents the double gate floating device based on Vander Waals heterostructure (DG-VH-FET), employing molybdenum disulfide (MoS 2 ), hexagonal boron nitride (h-BN), and graphene (Gr) as key components. These devices, based on 2D materials, enable independent modulation of channel doping through electrostatic means [3]. In this study, we initially assessed the fundamental characteristics of the floating gate, including transfer characteristics, output characteristics, retention, and endurance. By applying constant drain-to-source voltages (V DS ) while introducing variations in the back gate voltage (V BG ) sweeping range, the memory window of the transfer characteristics changes. Conversely, maintaining a constant V BG and V DS while varying the top gate voltage (V TG ) solely results in a shift in the threshold voltage of the memory window. This is attributed to the crucial role of V BG in charge trapping in the floating gate layer, with the influence of V TG on charge trapping being negligible due to the screening effect of MoS 2 [4]. Moreover, by using V TG and V BG this study shows that DG-VH-FET could have potential applications in exploring and understanding various neurological effects, thereby bridging the gap between electronics and biology. Figure 1

High Operation Speed(10ns/100ns) and Low Read Current (Sub-1Μa) 2D Floating Gate Transistor

Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS2 Channels

PZT-Enabled MoS2 Floating Gate Transistors: Overcoming Boltzmann Tyranny and Achieving Ultralow Energy Consumption for High-Accuracy Neuromorphic Computing.

Non‐Volatile Electrolyte‐Gated Transistors Based on Graphdiyne/MoS2 with Robust Stability for Low‐Power Neuromorphic Computing and Logic‐In‐Memory

Non‐Volatile Electrolyte‐Gated Transistors Based on Graphdiyne/MoS 2 with Robust Stability for Low‐Power Neuromorphic Computing and Logic‐In‐Memory

High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture

A Semi-Floating Gate Transistor for Low-Voltage Ultrafast Memory and Sensing Operation.

IGZO-based floating-gate synaptic transistors for neuromorphic computing

A high-performance MoS2 synaptic device with floating gate engineering for Neuromorphic Computing

A Semi-Floating Gate Memory with Tensile Stress for Enhanced Performance

High Conductance Margin for Efficient Neuromorphic Computing Enabled by Stacking Nonvolatile van der Waals Transistors

A Semi-Floating Gate Memory Based on Van Der Waals Heterostructures for Quasi-Non-volatile Applications

A Low-Power Vertical Dual-Gate Neurotransistor with Short-Term Memory for High Energy-Efficient Neuromorphic Computing

Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing

Ultrafast Non-Volatile Floating-Gate Memory Based on All-2D Materials

An Ultrafast Quasi‐Non‐Volatile Semi‐Floating Gate Memory with Low‐Power Optoelectronic Memory Application

A Dual‐Mode Programing Nonvolatile Floating‐Gate Memory with Convertible Ohmic and Schottky Contacts

Programmable Van‐der‐waals Heterostructure‐enabled Optoelectronic Synaptic Floating‐gate Transistors with Ultra‐low Energy Consumption

Low-voltage Ultrafast Nonvolatile Memory Via Direct Charge Injection Through a Threshold Resistive-Switching Layer

Exploring Neuromorphic Computing with Double-Gate Floating Device Based on Van Der Waals Heterostructures

Multi-gate-driven In-Ga-Zn-O memtransistors with a Sub-60 mV/decade subthreshold swing for neuromorphic and memlogic applications