Abstract:In recent times, there has been a notable surge of interests in hafnia (HfO2)-based ferroelectrics, primarily due to their remarkable ferroelectric properties employed in ultra-thin configurations, alongside their compatibility with the conventional CMOS manufacturing process. In order to harness the full potential of HfO2-based films for high-performance non-volatile memory applications, it is imperative to enhance their ferroelectric characteristics and durability. This study introduces a straightforward approach aimed at augmenting the ferroelectric performance of Hf x Zr1-x O2 (HZO) films deposited on silicon (Si) substrates through the engineering of oxygen vacancies (V O). The results of this endeavor demonstrate a significant enhancement in ferroelectric performance, characterized by a 2Pr value of 47 mu C cm-2 and impressive endurance, enduring up to 108 cycles under an 8 MV cm-1 electric field without the need of a wake-up process. This marked improvement can be attributed to a dual-pronged approach, involving the incorporation of an Al2O3 interlayer and the introduction of Al atoms into the HZO film. The Al2O3 interlayer primarily serves to mitigate the presence of oxygen vacancies at the interface, while the introduction of Al dopants elevates the concentration of oxygen vacancies within the bulk material. This modulation of oxygen vacancy concentration proves instrumental in facilitating the formation of a ferroelectric o-III phase within the HZO-based films, thereby further augmenting their ferroelectric performance. This innovative and effective strategy offers an alternative avenue for enhancing the ferroelectric properties of materials characterized by a fluorite crystal structure.

Optimization of Ferroelectricity and Endurance of Hafnium Zirconium Oxide Thin Films by Controlling Element Inhomogeneity

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Improving the Endurance for Ferroelectric Hf0.5Zr0.5O2 Thin Films by Interface and Defect Engineering

Achieving Excellent Ferroelectric and Dielectric Performance of HfO2/ZrO2/HfO2 Thin Films under Low Operating Voltage

Enhancing Ferroelectric Performance in Hafnia-Based MFIS Capacitor Through Interface Passivation and Bulk Doping.

Enhancement of Ferroelectricity and Homogeneity of Orthorhombic Phase in Hf0.5Zr0.5O2 Thin Films

Enhancement of ferroelectricity and homogeneity of orthorhombic phase in Hf 0.5 Zr 0.5 O 2 thin films

Hafnium-doped Zirconia Ferroelectric Thin Films with Excellent Endurance at High Polarization.

Improvement of Ferroelectricity and Endurance in Sr Doped Hf0.5Zr0.5O2 Films

Enhanced Polarization and Endurance Properties of ZrO2-based Ferroelectric Capacitor Using HfO2 Interfacial Layer

Epitaxial Orientation-Controlled High Crystallinity and Ferroelectric Properties in Hf0.5Zr0.5O2 Films

Enhanced polarization and endurance properties of ZrO2-based ferroelectric capacitor using HfO2interfacial layer

The Enhanced Polarization Switching Speed and Endurance in Hf 0.5 Zr 0.5 O 2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

Improved Ferroelectricity and Endurance in Ca Doped Hf0.5Zr0.5O2 Films

High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

High polarization, endurance and retention in sub-5 nm Hf$_{0.5}$Zr$_{0.5}$O$_2$ films

Interface-engineered ferroelectricity of epitaxial Hf0.5Zr0.5O2 thin films

The Enhanced Polarization Switching Speed and Endurance in Hf0.5Zr0.5O2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

Large ferroelectric polarization and high dielectric constant in HfO2-based thin films via Hf0.5Zr0.5O2/ZrO2 nanobilayer engineering

Improved Ferroelectric and Endurance Properties of Hf0.5Zr0.5O2 Thin Films by a Replacement Indium-Tin-oxide Top Electrode Process