Abstract:Using the spin-transfer torque random access memory (STT-RAM) technology as lower level on-chip caches has been proposed to minimize leakage power consumption and enhance cache capacity at the scaled technologies. However, programming STT-RAM is a stochastic process due to the random thermal fluctuations. Conventional worst-case (corner) design with a fixed write pulse period cannot completely eliminate the write failures but maintain it at a low level by paying high cost in hardware complexity and system performance. In this work, we systematically study the impacts of the stochastic switching of STT-RAM on circuit and cache performance. Two probabilistic design techniques, write-verify-rewrite with adaptive period (WRAP) and verify-one-while-writing (VOW), then are proposed for performance improvement and write failure reduction. Our simulation results show that compared to the result of the conventional design using Hamming Code to correct the write failures, WRAP is write error free while reducing the cache write latency and energy consumption by 40% and 26%, respectively. When an extremely low write failure rate (i.e., 1022) is allowed, VOW can further boost the reductions on write latency and energy to 52% and 29%, respectively. Furthermore, a hybrid STT-RAM based cache hierarchy taking advantages of probabilistic design techniques is proposed. The novel hierarchy can reduce the write failure rate of STT-RAM cache to 1030, while improving the speed by 6.8% and saving 15% of energy consumption compared to a conventional design with Hamming Code.

An Efficient Transparent Test Scheme for Embedded Word-Oriented Memories

Mitigating RC-Delay Induced Accuracy Loss in Analog In-Memory Computing: A Non-Compromising Approach

A Microprocessor Based SOC Built-In Test Scheme

An improved method for test chip design

A Novel Test Methodology For Design Of An Embedded Synchronous Dual-Read/Write Port Sram With Configurable Capacity

An Effective Test Method for Block RAMs in Heterogeneous FPGAs Based on a Novel Partial Bitstream Relocation Technique

An Improved Test Access Mechanism Structure and Optimization Technique in System-on-chip

Built-In Self-Test Architecture Enabling Diagnosis for Massive Embedded Memory Banks in Large SoCs

Bist Approach for Testing Embedded Memory Blocks in System-On-Chips

An Efficient Functional Test for the Massively-Parallel C·RAM Logic-Enhanced Memory Architecture

In Situ Storing 8T SRAM-CIM Macro for Full-Array Boolean Logic and Copy Operations

Binary Programming-based Transparency Path Construction for SoC Test Access

Partial Reconfiguration for Run-time Memory Faults and Hardware Trojan Attacks Detection

Probabilistic design methodology to improve run-time stability and performance of STT-RAM caches

TSE: Two-Step Elimination for MLC STT-RAM Last-Level Cache

Enabling architectural innovations using non-volatile memory.

A Novel Page-Forming Scheme with Ultra-Low Bit-Error-Rate and High Reliability on a 1mb RRAM Chip

Reverse Programmed SONOS Memory Technique for 0.18 Μm Embedded Utilization

Memory Grouping for the Built-In Self-Test of Three-Dimensional Integrated Circuits

A 512 Kb SRAM in 65nm CMOS with Divided Bitline and Novel Two-Stage Sensing Technique

S2RAM: Optimization of SRAM With Memory Access Patterns