Abstract:With the feature size shrinking, traditional electronic design methodologies face some bottlenecks such as per wafer cost, large interconnect delay, and high leakage power. Threedimensional integration circuit (3D IC) has been regarded as a promising solution to mitigate these problems. 3D ICs stack separate tiers in the vertical direction and connect them using vertical connections such as Through-Silicon-Vias (TSVs). Compared with traditional 2D integration, the 3D technology can provide many benefits such as reduction in the interconnect wire length, improvement of memory bandwidth, and support for realization of heterogeneous integration [1]. 3D power delivery network (PDN) is the basic support system for 3D ICs, which includes the power/ground (P/G) networks, the vertical interconnects, and the package (shown in Figure 1). In 3D PDNs, P/G TSVs connect the P/G networks in different tiers, and the bottommost tier is connected to the package through metal bumps and then routed to the voltage sources on the PCB board. The design of a 3D PDN is much more complex than the design of a 2D power network [2] and considered as one of the most critical challenges in IC design. As power coupling between different tiers becomes tighter and multiple tiers are stacked together into small footprints, delivering current to all parts of the 3D IC becomes highly challenging. An irrational PDN design may result in low supply voltage levels in the grid, i.e. large IR-drop, and thus increase the gate delay, lead to timing violations and harm the functionality of circuits [3]. To design a PDN, suitable simulation approaches are necessary. However, PDN analysis is usually a time and resource consuming task since there are millions of nodes in most mesh-based PDNs. The simulation problem becomes tougher in 3D cases as the network scale may be several times larger than that of 2D cases. Nevertheless, most existing studies tend to regard the 3D power system as a whole like a 2D power system, which does not utilize the inherent 3D structure and causes inefficiency. Considering that TSVs naturally form good partition boundaries, a hierarchical technique to analyze the 3D PDN regarding the power grid of each layer as a macro-model may lead to efficiency and offer an opportunity for further parallel speedup. Numerous studies spring up these years in the field of 3D PDN design. However, most studies tended to simply increase the number of TSVs to mitigate power supply problems. Since TSV fabrication causes tensile stress around TSVs and results in significant carrier mobility variation in the devices P/G TSV

Self-Heating Effect of Device-Circuit with Back-side Power Delivery Network Beyond 3nm Node

High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

Silicon-Validated Power Delivery Modeling and Analysis on a 32-Nm DDR I/O Interface.

Investigation of Self-Heating Effect on Forksheet Field-Effect Transistors

Analysis of Self-Heating Effects in Multi-Nanosheet FET Considering Bottom Isolation and Package Options

Unified Self-Heating Effect Model for Advanced Digital and Analog Technology and Thermal-Aware Lifetime Prediction Methodology

Deep Insight of Self-Heating Effect Induced Hot Carrier Reliability Improvement in LDMOS Devices

System-Level Analysis of 3D ICs with Thermal TSVs

Statistical Simulation of Self-Heating Induced Variability and Reliability with Application to Nanosheet-FETs Based SRAM

Study on the Regulation Factors and Mechanism of Self-Heating Effects in non-rectangular 14 nm Bulk FinFET

Analytical Multistage Thermal Resistance Model for NSFET Self-heating Effects

Analysis of the electrothermal coupling performance with buried power rail structure introduction

Layout Design Correlated with Self-Heating Effect in Stacked Nanosheet Transistors

A Physics-based Thermal Model of Nanosheet MOSFETs for Device-Circuit Co-design

Etch of nano-TSV with smooth sidewall and excellent selection ratio for backside power delivery network

Thermal-aware Power Network Design for IR Drop Reduction in 3D ICs.

Hierarchical Simulation and Optimization of 3 D Power Delivery Network

Self-heating Induced Variability and Reliability in Nanosheet-FETs Based SRAM

A New Framework of Physics-Based Compact Model Predicts Reliability of Self-Heated Modern ICs: FinFET, NWFET, NSHFET Comparison

Parametric Studies of Nanoscale Through-Silicon Vias under the Reflow in Advanced Packaging

Self-heating Induced Variability and Reliability in Advanced Logic Devices and Circuits