Study on the Regulation Factors and Mechanism of Self-Heating Effects in non-rectangular 14 nm Bulk FinFET
Zhaohui Qin,Lan Chen,Renjie Lu,Yali Wang,Xiaoran Hao,Rong Chen,Yan Sun,Qin Du,zhaohui qin,yali wang
DOI: https://doi.org/10.1088/1361-6641/ad689f
IF: 2.048
2024-07-31
Semiconductor Science and Technology
Abstract:This work investigates into the innovative design of a 14nm bulk 3D non-rectangular structure FinFET. By incorporating a cylindrical trapezoidal structure into the upper portion of the FinFET, it transcend the limitations posed by the self-heating effect observed in traditional rectangular fins.Through the density gradient model and thermal conduction model, the changes in the electron carrier temperature and lattice temperature of the channel are studied, and the relationship between electrical properties and thermal resistance was further analyzed, revealing the effect of self-heating on the threshold voltage and switching speed of the device. In addition, the self-heating effect of the doping of source and drain extension regions was also explored, and the effects of electron mobility changes at different ambient temperatures were also studied to clarify their impact on the electrical properties. Ultimately, this work offers novel insights into the design, optimization, and reliability studies of device structures affected by self-heating effects.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter