Insertion of Hafnium Interlayer to Improve the Thermal Stability of Ultrathin TiSi x in TiSi x /n + -Si Ohmic Contacts
Yaodong Liu,Xianglie Sun,Jing Xu,Jianfeng Gao,Jinbiao Liu,Xuebing Zhou,Yongliang Li,Junfeng Li,Wenwu Wang,Tianchun Ye,Jun Luo
DOI: https://doi.org/10.1109/ted.2022.3166719
IF: 3.1
2022-06-01
IEEE Transactions on Electron Devices
Abstract:Serious agglomeration of ultrathin TiSix employed in source–drain (S–D) ohmic contacts after high-temperature annealing was manifested in previous work. This severely restricts its application in state-of-the-art DRAM peripheral 3-D FinFET transistors. In this work, the effects of hafnium (Hf) interlayer on the thermal stability of ultrathin TiSix in TiSix/n+-Si ohmic contacts were systematically studied. As-prepared ultrathin TiSix and TiSix/n+-Si ohmic contacts with 0-, 1-, 2-, and 3-nm Hf interlayers were characterized by means of specific contact resistivity ($\rho _{\text {c}}$ ), transmission electron microscopy (TEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). It is found that compared to the counterparts with 0-, 2-, and 3-nm Hf, the presence of 1-nm Hf interlayer is proven to be effective in enhancing the thermal stability of ultrathin TiSix significantly. With 1-nm Hf, amorphous HfO2, and Hf silicate are readily formed, which hinders the interdiffusion between Ti and Si atoms and resultant agglomeration of ultrathin TiSix films. This is thought to be responsible for such a remarkably enhanced thermal stability of ultrathin TiSix in TiSix/n+-Si ohmic contacts.
engineering, electrical & electronic,physics, applied