A simple method of humidifying anaesthetic gases

J. Wynands,F. Wrigley

DOI: https://doi.org/10.1007/BF03002183

1966-07-01

Abstract:

What problem does this paper attempt to address?

Titanium Contacts to MoS2 with Interfacial Oxide: Interface Chemistry and Thermal Transport

Keren M. Freedy,David H. Olson,Patrick E. Hopkins,Stephen J. McDonnell

DOI: https://doi.org/10.1103/PhysRevMaterials.3.104001

2019-06-26

Abstract:The deposition of a thin oxide layer at metal/semiconductor interfaces has been previously reported as a means of reducing contact resistance in 2D electronics. Using X-ray photoelectron spectroscopy with in-situ Ti deposition, we fabricate Au/Ti/TiOx/MoS2 samples as well as Au/Ti/MoS2 and Au/TiOx/MoS2 for comparison. Elemental titanium reacts strongly with MoS2 whereas no interface reactions are observed in the two types of samples containing TiOx/MoS2 interfaces. Using time domain thermoreflectance for the measurement of thermal boundary conductance, we find that samples contacted with Ti and a thin TiOx layer at the interface (less than or equal to 1.5 nm) exhibit the same behavior as samples contacted solely with pure Ti. The Au/TiOx/MoS2 samples exhibit approximately 20% lower thermal boundary conductance, despite having the same MoS2 interface chemistry as the samples with thin oxide at the Ti/MoS2 interface. We identify the mechanism for this phenomenon, attributing it to the different interfaces with the top Au contact. Our work demonstrates that the use of thin interfacial oxide layers to reduce electrical contact resistance does not compromise heat flow in 2D electronic devices. We note that the thicknesses of the Ti and TiOx layers must be considered for optimal thermal transport.

Materials Science
Contact Engineering of Molybdenum Ditelluride Field Effect Transistors Through Rapid Thermal Annealing

Jiancui Chen,Zhihong Feng,Shuangqing Fan,Siang Shi,Yuchen Yue,Wanfu Shen,Yuan Xie,Enxiu Wu,Chongling Sun,Jing Liu,Hao Zhang,Wei Pang,Dong Sun,Wei Feng,Yiyu Feng,Sen Wu,Daihua Zhang

DOI: https://doi.org/10.1021/acsami.7b06739

IF: 9.5

2017-01-01

ACS Applied Materials & Interfaces

Abstract:Understanding and engineering the interface between metal and two-dimensional materials are of great importance to the research and development of nano electronics. In many cases the interface of metal and 2D materials can dominate the transport behavior of the devices. In this study, we focus on the metal contacts of MoTe2 (molybdenum ditelluride) FETs (field effect transistors) and demonstrate how to use post-annealing treatment to modulate their transport behaviors in a-controlled manner. We have also carried out low temperature and transmission electron microscopy studies to understand the mechanisms behind the prominent effect of the annealing process. Changes in transport properties are presumably due to anti-site defects formed at the metal-MoTe2 interface under elevated temperature. The study provides more insights into MoTe2 field effect devices and suggests guidelines for future optimizations.
Fundamental Understanding of Interface Chemistry and Electrical Contact Properties of Bi and MoS2

Seong Yeoul Kim,Zheng Sun,Joy Roy,Xinglu Wang,Zhihong Chen,Joerg Appenzeller,Robert M Wallace

DOI: https://doi.org/10.1021/acsami.4c10082

2024-10-09

Abstract:The interface properties and thermal stability of bismuth (Bi) contacts on molybdenum disulfide (MoS2) shed light on their behavior under various deposition conditions and temperatures. The examination involves extensive techniques including X-ray photoelectron spectroscopy, scanning tunneling microscopy (STM), and scanning tunneling spectroscopy (STS). Bi contacts formed a van der Waals interface on MoS2 regardless of deposition conditions, such as ultrahigh vacuum (UHV, 3 × 10-11 mbar) and high vacuum (HV, 4 × 10-6 mbar), while the oxidation on MoS2 has been observed. However, the semimetallic properties of Bi suppress the impact of defect states, including oxidized-MoS2 and vacancies. Notably, the n-type characteristic of Bi/MoS2 remains unaffected, and no significant changes in the local density of states near the conduction band minimum are observed despite the presence of defects detected by STM and STS. As a result, the Fermi level (EF) resides below the conduction band of MoS2. The study also examines the impact of annealing on the contact interface, revealing no interface reaction between Bi and MoS2 up to 300 °C. These findings enhance our understanding of semimetal (Bi) contacts on MoS2, with implications for improving the performance and reliability of electronic devices.
Fundamental Understanding of Interface Chemistry and Electrical Contact Properties of Bi and MoS 2

Seong Yeoul Kim,Zheng Sun,Joy Roy,Xinglu Wang,Zhihong Chen,Joerg Appenzeller,Robert M. Wallace

DOI: https://doi.org/10.1021/acsami.4c10082

IF: 9.5

2024-09-25

ACS Applied Materials & Interfaces

Abstract:The interface properties and thermal stability of bismuth (Bi) contacts on molybdenum disulfide (MoS(2)) shed light on their behavior under various deposition conditions and temperatures. The examination involves extensive techniques including X-ray photoelectron spectroscopy, scanning tunneling microscopy (STM), and scanning tunneling spectroscopy (STS). Bi contacts formed a van der Waals interface on MoS(2) regardless of deposition conditions, such as ultrahigh vacuum (UHV, 3 × 10^(-11) mbar)...

materials science, multidisciplinary,nanoscience & nanotechnology
On the Contact Optimization of ALD-Based MoS 2 FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance

Reyhaneh Mahlouji,Yue Zhang,Marcel A. Verheijen,Jan P. Hofmann,Wilhelmus M. M. Kessels,Abhay A. Sagade,Ageeth A. Bol

DOI: https://doi.org/10.1021/acsaelm.1c00379

IF: 4.494

2021-06-28

ACS Applied Electronic Materials

Abstract:Despite the extensive ongoing research on MoS2 field effect transistors (FETs), the key role of device processing conditions in the chemistry involved at the metal-to-MoS2 interface and their influence on the electrical performance are often overlooked. In addition, the majority of reports on MoS2 contacts are based on exfoliated MoS2, whereas synthetic films are even more susceptible to the changes made in device processing conditions. In this paper, working FETs with atomic layer deposition (ALD)-based MoS2 films and Ti/Au contacts are demonstrated, using current–voltage (I–V) characterization. In pursuit of optimizing the contacts, high-vacuum thermal annealing as well as O2/Ar plasma cleaning treatments are introduced, and their influence on the electrical performance is studied. The electrical findings are linked to the interface chemistry through X-ray photoelectron spectroscopy (XPS) and scanning transmission electron microscopy (STEM) analyses. XPS evaluation reveals that the concentration of organic residues on the MoS2 surface, as a result of resist usage during the device processing, is significant. Removal of these contaminations with O2/Ar plasma changes the MoS2 chemical state and enhances the MoS2 electrical properties. Based on the STEM analysis, the observed progress in the device electrical characteristics could also be associated with the formation of a continuous TiSx layer at the Ti-to-MoS2 interface. Scaling down the Ti interlayer thickness and replacing it with Cr is found to be beneficial as well, leading to further device performance advancements. Our findings are of value for attaining optimal contacts to synthetic MoS2 films.This article has not yet been cited by other publications.

materials science, multidisciplinary,engineering, electrical & electronic
Low-resistivity Ohmic contacts of Ti/Al on few-layered 1T'-MoTe2/2H-MoTe2 heterojunctions grown by chemical vapor deposition

Ping-Feng Chi,Jing-Jie Wang,Jing-Wen Zhang,Yung-Lan Chuang,Ming-Lun Lee,Jinn-Kong Sheu

DOI: https://doi.org/10.1039/d4nh00347k

2024-10-21

Abstract:This study explores the phase-controlled growth of few-layered 2H-MoTe2, 1T'-MoTe2, and 2H-/1T'-MoTe2 heterostructures and their impacts on metal contact properties. Cold-wall chemical vapor deposition (CW-CVD) with varying growth rates of MoOx and reaction temperatures with Te vapors enabled the growth of continuous thin films of either 1T'-MoTe2 or 2H-MoTe2 phases on two-inch sapphire substrates. This methodology facilitates the meticulous optimization of chemical vapor deposition (CVD) parameters, enabling the realization of phase-controlled growth of few-layered MoTe2 thin films and their subsequent heterostructures. The study further investigates the influence of a 1T'-MoTe2 intermediate layer on the electrical properties of metal contacts on few-layered 2H-MoTe2. Bi-layer Ti/Al contacts directly deposited on 2H-MoTe2 exhibited Schottky behavior, indicating inefficient carrier transport. However, introducing a few-layered 1T'-MoTe2 intermediate layer between the metal and 2H-MoTe2 layers improved the contact characteristics significantly. The resulting Al/Ti/1T'-MoTe2/2H-MoTe2 contact scheme demonstrates Ohmic behavior with a specific contact resistance of around 1.7 × 10-4 Ω cm2. This substantial improvement is attributed to the high carrier concentration of the 1T'-MoTe2 intermediate layer which could be attributed tentatively to the increased tunneling events across the van der Waals gap and enhancing carrier transport between the metal and 2H-MoTe2.
Contact engineering for temperature stability improvement of Bi-contacted MoS2 field effect transistors

Zizheng Liu,Qing Zhang,Xiaohe Huang,Chunsen Liu,Peng Zhou

DOI: https://doi.org/10.1007/s11432-023-3942-2

2024-05-19

Science China Information Sciences

Abstract:Semimetallic bismuth (Bi) is one of the most effective strategies for reducing the contact resistance of two-dimensional transition metal dichalcogenide field effect transistors (FETs). However, the low melting point of Bi contact (271.5° C) limits its reliable applications. In this study, we demonstrated that the temperature stability of Bi-contacted electrodes could be improved by inserting a high-melting point semimetallic antimony (Sb) between the Bi contacting layer and the gold (Au) capping layer. The proposed Bi/Sb/Au contact electrodes tended to form a metal mixture with a continuous surface during the heating process (Voids appeared on the surface of the Bi/Au contact electrodes after heating at 120° C). Because of the improved contacting layer formed by the semimetal Bi/Sb alloy, the fabricated Bi/Sb/Au-contacted molybdenum sulfide (MoS 2 ) FETs with different gate lengths demonstrated higher on-state current stability after heating treatment than the Bi/Au contact. Because of the Bi/Sb/Au contact and poly (methyl methacrylate) package, the MoS 2 FETs demonstrated time stability of at least two months from the almost unchanged transfer characteristics. The electrical stability indicates that the insertion of semimetallic Sb is a promising technology for reliable Bi-based contact.

computer science, information systems,engineering, electrical & electronic
Annealing Behavior of Ultrathin Mo Layer Located at Interface or on Surface of Ti－Si System

ZHANGZhi-Bin,ZHANGShi-Li

2001-01-01

Abstract:Annealing behavior, at different annealing temperatures, of an ultrathin Mo layer located between a Ti film and Si substrate or deposited on the top of sur face of a Ti film was investigated by Rutherford backscattering spectrometry (RBS), cross-sectional transmission electron microscopy (TEM) and energy dispersive X-ray spectrometry (EDS). In a Ti/Mo/Si structure, partially reacted film with layer struc ture of Ti-rich silicide/TiSi2/(Mo, Ti)Si2 on a Si substrate was formed after 550℃ annealing for 30 min. The ratio of Mo to Ti in (Mo, Ti)Si2 layer decreases from near Si substrate upwards and becomes zero at about 20 nm away. In a Mo/Ti/Si structure, the surface Mo layer enhances the Si diffusion from the substrate during annealing. Mo bearing Ti rich silicide exists on the surface until 600℃ and then converts to (Mo, Ti)Si2 after 650℃ annealing, and the atomic ratio of Mo to Ti decreases from the top surface into Ti silicide film, and becomes zero at about 30 nm away from the surface. In both cases of interface Mo and surface Mo layer, the atomic ratio of Mo to Ti in the region of (Mo, Ti)Si2 was found to be very low, with an average value of less than 0.2. Low content of Mo in Mo containing ternary silicide leads easily to the formation of the stable phase of C54 (Mo, Ti)Si2, which acts as a template for the formation of C54 TiSi2 beneath when Mo is deposited on the surface.
High-temperature strain-mediated oxidation of 2D MoS2

Mehdi Rouhan,Jonathan Hobley,Kuang-I Lin,Mario Hofmann,Yu-Chi Yao,Yung-Huang Chang,Robert William Carpick,J. David Schall,Yeau-Ren Jeng,Mehdi Rouhani

DOI: https://doi.org/10.1016/j.matdes.2023.112490

IF: 9.417

2023-12-01

Materials & Design

Abstract:MoS2 is 2D material applicable for electronics, photo-detectors, light-emitting diodes, and solar cells. Since these applications operate at elevated temperatures, determining and controlling the environmental stability of MoS2 is essential. This study uses Raman spectroscopic experiments at elevated temperatures to observe reversible and irreversible changes in 2D MoS2 films with varying thickness, morphology, and substrate to explore the limits of its thermal stability. Molecular dynamics simulations and in-situ X-ray diffraction confirm that thermal expansion causes the Raman reversible spectral shifts. Further analysis reveals irreversible spectral shifts associated with oxidation and strain effects caused by oxidation with two distinct modes. The former is due to the general homogenous thinning of layers from the top layer down through randomly spaced sulfur vacancies. The latter is due to inhomogeneous oxidation, which known to occur as localized pitting at grain boundaries, void formation from nucleation centers, or stress corrosion cracking starting from edges under strain. Segregation of doping and strain contributions confirms higher strain in the edges. Annealing increases the spread of the strain distribution. These results highlight the critical role of strain, resulting from thermal expansion coefficient mismatch between substrates and 2D MoS2 films, on their environmental stability.

materials science, multidisciplinary
A Study of Contact Properties Between Molybdenum and Amorphous Silicon Tin Oxide Thin Film Transistors

Honglong Ning,Xianzhe Liu,Hua Xu,Kuankuan Lu,Hongke Zhang,Xiaochen Zhang,Rihui Yao,Zhiqiang Fang,Xiaofeng Wang,Junbiao Peng

DOI: https://doi.org/10.1002/jsid.735

2018-01-01

Journal of the Society for Information Display

Abstract:Amorphous silicon tin oxide (a-STO) semiconductor is of increasing interest for fabricating thin film transistor. The contact properties of Mo source/drain electrode to a-STO film subjected to different thermal annealing processes was investigated. The formation of molybdenum oxide interlayer between Mo and a-STO film annealed in air ambient was confirmed by cross-sectional transmission electron microscopy image, and the interlayer was formed by getting oxygen from a-STO film in air annealing process. The formation of molybdenum oxide interlayer could provide not only an adhesive layer but also an intermediate barrier layer, and it hindered Mo atoms diffuse into a-STO film, which would form a good quality of contact interface and facilitate the electron injection from Mo electrode into a-STO film.
Thermal Stability of TiN/Ti/p+-Si0.3Ge0.7 Contact with Ultralow Contact Resistivity

Jian Zhang,Hao Yu,Lin-Lin Wang,Marc Schaekers,D. Mocuta,Naoto Horiguchi,Nadine Collaert,Kristin De Meyer,Yu-Long Jiang

DOI: https://doi.org/10.1109/led.2017.2771203

IF: 4.8157

2018-01-01

IEEE Electron Device Letters

Abstract:In this letter, the contact properties and thermal stability of TiN/Ti/p(+)-Si0.3Ge0.7 contacts are investigated. We demonstrate that the insertion of an ultra-thin Ti interlayer is necessary to reduce the contact resistivity (rho(c)) as compared with a standard TiN/p(+)-Si0.3Ge0.7 direct contact. However, the Ti interlayer has to be thin enough to avoid degradation of the contact morphology after 500 degrees C annealing. This letter reveals further that the Ti encroachment into grooved SiGe regions under the contact interface is responsible for the rho(c) increase seen after this annealing.
Interdiffusion and Phase Formation During Thermal Annealing of Ti/Mo Bilayers on Si Substrates

Mouroux A.,Zhang S.-L.,Kaplan W.,Nygren S.,Östling M.,Petersson C. S.

DOI: https://doi.org/10.1557/proc-427-511

1996-01-01

Abstract:AbstractThe formation of TiSi2 from deposited Ti layers on Si and the subsequent transformation of TiSi 2 from the C49 to the C54 phase have long been of concern, particular for the silicide formation on heavily doped, narrow polycrystalline Si lines. In this work, phase formation during rapid thermal annealing of Ti/Mo bilayers sequentially deposited on blanket Si wafers and on narrow polycrystalline Si lines (0.6 μm width) is studied. The Mo layer is always 0.5 nm thick, and the Ti either 45 nm or 60 nm. It is shown that the initial physical separation of Ti from Si by the interposed Mo layer leads to complete prevention of the formation of the C49 phase. Instead, a Mo-bearing silicide phase of hexagonal structure forms first, and the C54 phase nucleates and then grows on top of it via Si diffusion through the growing silicide layers. The significance of this finding is that the usual sequence for the formation of TiSi2,. e. the C49 phase forms as a result of the Ti-Si interaction and the C54 phase forms as the product of phase transformation, is altered by the interposition of a thin refractory metal layer, here Mo. The difficulties involved in nucleation and growth of the C54 phase are then overcome, yet by a different approach than the usually employed ones which rely on ion implantation to enhance the formation of the C49 phase and the subsequent transformation to the C54 phase.
Thermal Stability and High-Temperature Photoluminescence of Chemical Vapor Deposited MoS2 in Different Atmosphere

Rongsheng Li,Junyao Yu,Bing Yao,Zhenjia Zhou,Guowen Yuan,Jie Xu,Libo Gao

DOI: https://doi.org/10.1116/5.0095120

2022-01-01

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Abstract:Understanding the high-temperature behaviors of two-dimensional (2D) transition metal dichalcogenides under different environments will provide a directive guide for the fabrication and application of their nanoelectronic devices. In this study, we investigate the high-temperature properties of chemical vapor deposition grown molybdenum disulfide (MoS2) in different atmospheres through the ex situ and in situ morphological and spectroscopical characterizations. When the MoS2 is exposed to Ar, dry O2, and wet O2 at the temperature of 500, 350, and 300 °C, the etching process starts at the edge and inner regions simultaneously, and the etched trenches are opposite to the outline of the MoS2 triangular shape. We observe a clear redshift of MoS2 in the Raman peak position and the photoluminescence peak position by in situ spectroscopical characterizations as the temperature increases. Moreover, a strong photoluminescence enhancement of 24-fold of MoS2 is observed when exposing to O2 at 300 °C. This should be due to the chemical and physical adsorbed oxygen on the MoS2 surface. Moreover, we find that physical adsorption can be eliminated after vacuum annealing. This study provides a real-time strategy to study the morphology and property evolution of 2D materials at high temperature in different atmospheres. These results will contribute to the applications in future electronic and optoelectronic functional devices of 2D materials.
Substrate Modified Thermal Stability Of Mono- And Few-Layer Mos2

Xuewen Wang,Wen Fan,Ziwei Fan,Wanyu Dai,Kunlei Zhu,Shengzhe Hong,Yufei Sun,Junqiao Wu,Kai Liu

DOI: https://doi.org/10.1039/c7nr08941d

IF: 6.7

2018-01-01

Nanoscale

Abstract:Two-dimensional semiconducting transition metal dichalcogenides have been employed as key components in various electronic devices. The thermal stability of these ultrathin materials must be carefully considered in device applications because the heating caused by current flow, light absorption, or other harsh environmental conditions is usually unavoidable. In this work, we found that the substrate plays a role in modifying the thermal stability of mono-and few-layer MoS2. Triangular etching holes, which are considered to initiate from defect sites, form on MoS2 when the temperature exceeds a threshold. On Al2O3 and SiO2, monolayer MoS2 is found to be more stable in thermal annealing than few-layer MoS2 either in atmospheric-pressure air or under vacuum; while on mica, the absolute opposite behavior exists. However, this difference due to substrates appears to vanish when using defective, chemical-vapor-deposited MoS2 samples. The substrate modification of the thermal stability of MoS2 with various thicknesses is attributed to the competition between MoS2-substrate interface interaction and MoS2-MoS2 interlayer interaction. Our findings provide important design rules for MoS2-based devices, and also potentially point to a route of controlled patterning of MoS2 with substrate engineering.
Impact of thermal annealing on the interaction between monolayer MoS2 and Au

Stephanie Lough,Jesse E. Thompson,Darian Smalley,Rahul Rao,Masahiro Ishigami

2023-11-09

Abstract:We have investigated the impact of thermal annealing on the interaction of single layer MoS2 and Au using Raman Spectroscopy. We found MoS2 has two main modes of interactions with the underlying Au being either weakly-coupled or strongly-coupled. The regions strongly-coupled to Au are hybridized to Au, minimally strained, and electron-doped. The weakly-coupled regions are found to be slightly hole-doped with tensile strain of 1.0 %. The observed nanoscale inhomogeneities in doping would result in Au contacts having a large variability in performance. The overall areal coverage of the strongly-coupled regions is not increased by thermal annealing, and the variability in the degree of hybridization increases at annealing temperatures above 100 °C. Our data also show that monolayer MoS2 starts to decouple from Au around 100 °C, becoming fully decoupled above 250 °C, suggesting that monolayer MoS2 produced by Au-assisted mechanical exfoliation may be more easily transferred off Au at elevated temperatures.

Materials Science,Applied Physics
Influence of Metal-Mos2 Interface on MoS2 Transistor Performance: Comparison of Ag and Ti Contacts.

Hui Yuan,Guangjun Cheng,Lin You,Haitao Li,Hao Zhu,Wei Li,Joseph J. Kopanski,Yaw S. Obeng,Angela R. Hight Walker,David J. Gundlach,Curt A. Richter,Dimitris E. Ioannou,Qiliang Li

DOI: https://doi.org/10.1021/am506921y

IF: 17.1

2014-01-01

ACS Nano

Abstract:In this work, we compare the electrical characteristics of MoS2 field-effect transistors (FETs) with Ag source/drain contacts with those with Ti and demonstrate that the metal-MoS2 interface is crucial to the device performance. MoS2 FETs with Ag contacts show more than 60 times higher ON-state current than those with Ti contacts. In order to better understand the mechanism of the better performance with Ag contacts, 5 nm Au/5 nm Ag (contact layer) or 5 nm Au/5 nm Ti film was deposited onto MoS2 monolayers and few layers, and the topography of metal films was characterized using scanning electron microscopy and atomic force microscopy. The surface morphology shows that, while there exist pinholes in Au/Ti film on MoS2, Au/Ag forms a smoother and denser film. Raman spectroscopy was carried out to investigate the metal-MoS2 interface. The Raman spectra from MoS2 covered with Au/Ag or Au/Ti film reveal that Ag or Ti is in direct contact with MoS2. Our findings show that the smoother and denser Au/Ag contacts lead to higher carrier transport efficiency.
The Thermal Stability Study and Improvement of 4H-Sic Ohmic Contact

Shengbei Liu,Zhi He,Liu Zheng,Bin Liu,Feng Zhang,Lin Dong,Lixin Tian,Zhanwei Shen,Jinze Wang,Yajun Huang,Zhongchao Fan,Xingfang Liu,Guoguo Yan,Wanshun Zhao,Lei Wang,Guosheng Sun,Fuhua Yang,Yiping Zeng

DOI: https://doi.org/10.1063/1.4896320

IF: 4

2014-01-01

Applied Physics Letters

Abstract:The thermal stability of the standard Ni/SiC and a TiW/Ni/SiC Ohmic contacts was investigated and compared after being aged at 400 °C in the N2 atmosphere. The Ohmic contact was characterized using a combination of I-V measurements, the optical microscopic imaging, X-ray diffraction (XRD), and Auger electron spectroscopy (AES) techniques. It is shown that the standard Ni/SiC Ohmic contact failed after being aged at 400 °C for 20 h in the N2 atmosphere, while the TiW/Ni/SiC Ohmic contact could stand after 100 h. The TiW/Ni/SiC Ohmic contact was found kept a smooth surface morphology during the rapid thermal annealing and aging process, while the standard Ni/SiC Ohmic metal surface was found rougher. Both the Ohmic contact deteriorations after high temperature aging could be attributed to the formation of graphite which is confirmed by the XRD results. The XRD and AES results reveal that the better thermal stability of the TiW/Ni/SiC could be explained by the formation of CW3 and TiC, which deter the C atom diffusion to form graphite.
Interfacial thermal resistance between mechanically exfoliated nm-thick MoS 2 and silicon from −60 °C to 50 °C based on ns-ET Raman technique

Cichun Li,Jinhao Peng,Jiayi Ou,Tianyu Wang,Yangsu Xie

DOI: https://doi.org/10.1016/j.ijheatmasstransfer.2024.125703

IF: 5.2

2024-05-20

International Journal of Heat and Mass Transfer

Abstract:In the miniaturization and integration development of micro-devices, the large thermal contact resistance significantly affects the overall performance of micro-devices, which is influenced by both interfacial contact condition and material properties. However, the temperature dependence of interfacial thermal resistance of realistic materials remains unclear. In this work, the interfacial thermal resistance between nm-thick MoS 2 nanosheets and Si substrate is measured by using the ns energy transport state-resolved Raman (ns ET-Raman) technique. By comparing the experimental data with finite difference numerical simulation, the real value of the interfacial thermal resistance is determined. By changing the ambient temperature from -60 °C to 50 °C, the interfacial thermal resistance against temperature curve is obtained. As the environmental temperature deviates from room temperature, a large increasement of the interfacial thermal resistance can be observed. As temperature goes back to room temperature, the unreversible interfacial thermal resistance indicates that the large thermal expansion mismatch deteriorates the contact situation. In the last, the interfacial thermal resistance evolution under varying environmental temperatures from both experiments and modeling results in literatures are compared and discussed to illustrate the effect of different interface formation methods. For epitaxial and CVD grown materials, the interfacial thermal resistance generally reduces with raising ambient temperature. While for mechanically exfoliated samples, the effect of thermal expansion mismatch and the resulting gaps dominate the interfacial thermal resistance, which leads to non-monotonous temperature dependency with a valley located at room temperature.

engineering, mechanical,thermodynamics,mechanics
Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts

Zheng Sun,Seong Yeoul Kim,Jun Cai,Jianan Shen,Hao-Yu Lan,Yuanqiu Tan,Xinglu Wang,Chao Shen,Haiyan Wang,Zhihong Chen,Robert M Wallace,Joerg Appenzeller

DOI: https://doi.org/10.1021/acsnano.4c07267

IF: 17.1

2024-08-20

ACS Nano

Abstract:Contact engineering on monolayer layer (ML) semiconducting transition metal dichalcogenides (TMDs) is considered the most challenging problem toward using these materials as a transistor channel in future advanced technology nodes. The typically observed strong Fermi-level pinning induced in part by the reaction of the source/drain contact metal and the ML TMD frequently results in a large Schottky barrier height, which limits the electrical performance of ML TMD field-effect transistors (FETs). However, at a microscopic level, little is known about how interface defects or reaction sites impact the electrical performance of ML TMD FETs. In this work, we have performed statistically meaningful electrical measurements on at least 120 FETs combined with careful surface analysis to unveil contact resistance dependence on interface chemistry. In particular, we achieved a low contact resistance for ML MoS2 FETs with ultrahigh-vacuum (UHV, 3 × 10-11 mbar) deposited Ni contacts, ∼500 Ω·μm, which is 5 times lower than the contact resistance achieved when deposited under high-vacuum (HV, 3 × 10-6 mbar) conditions. These electrical results strongly correlate with our surface analysis observations. X-ray photoelectron spectroscopy (XPS) revealed significant bonding species between Ni and MoS2 under UHV conditions compared to that under HV. We also studied the Bi/MoS2 interface under UHV and HV deposition conditions. Different from the case of Ni, we do not observe a difference in contact resistance or interface chemistry between contacts deposited under UHV and HV. Finally, this article also explores the thermal stability and reliability of the two contact metals employed here.
Interface transition from Ohmic to Schottky contact in Ti3X2/MoS2 (X= B, C, N): Insights from first-principles

Yan Liu,Wendong Zhang,Bohan Lv,Yang Ge,Riguang Zhang,Baojun Wang,Zhihong Chen,Qiang Zhang,Shengbo Sang

DOI: https://doi.org/10.1016/j.surfin.2022.101823

IF: 6.2

2022-06-01

Surfaces and Interfaces

Abstract:Ti3C2 MXene has received tremendous interest as a potential electrode in flexible electronics due to its promising electronic and mechanical properties. However, its inherent properties determine the interfacial performance and the interfacial properties with MoS2 are critical to nanoelectronics device. Based on first-principles calculations, the mechanical properties of Ti3X2 (X= B, C or N) and interfacial properties of Ti3X2/MoS2 by strain are investigated. The Ti3N2 shows advantages in strength and conductivity, and all Ti3X2/MoS2 interfaces exhibit Ohmic contact without tunneling barrier. Furthermore, depending on the nearly disappearing interface hybridization by controlling vertical strain, a transition from Ohmic to Schottky contact occurs. The differences in metal work function and interface dipole potential make the Schottky contact display n-type in Ti3B2/MoS2 and Ti3C2/MoS2, while p-type in Ti3N2/MoS2 until the vertical strain reaches 3.60 Å. Moreover, the increasing vertical strain is accompanied by the rising tunneling barrier, and weak interfacial interaction makes the variation of barrier more sensitive to strain. The results demonstrate that vertical strain is an effective way of controlling metal-semiconductor interface and provide guidance for designing Schottky devices.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films

A simple method of humidifying anaesthetic gases

Titanium Contacts to MoS2 with Interfacial Oxide: Interface Chemistry and Thermal Transport

Contact Engineering of Molybdenum Ditelluride Field Effect Transistors Through Rapid Thermal Annealing

Fundamental Understanding of Interface Chemistry and Electrical Contact Properties of Bi and MoS2

Fundamental Understanding of Interface Chemistry and Electrical Contact Properties of Bi and MoS 2

On the Contact Optimization of ALD-Based MoS 2 FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance

Low-resistivity Ohmic contacts of Ti/Al on few-layered 1T'-MoTe2/2H-MoTe2 heterojunctions grown by chemical vapor deposition

Contact engineering for temperature stability improvement of Bi-contacted MoS2 field effect transistors

Annealing Behavior of Ultrathin Mo Layer Located at Interface or on Surface of Ti－Si System

High-temperature strain-mediated oxidation of 2D MoS2

A Study of Contact Properties Between Molybdenum and Amorphous Silicon Tin Oxide Thin Film Transistors

Thermal Stability of TiN/Ti/p+-Si0.3Ge0.7 Contact with Ultralow Contact Resistivity

Interdiffusion and Phase Formation During Thermal Annealing of Ti/Mo Bilayers on Si Substrates

Thermal Stability and High-Temperature Photoluminescence of Chemical Vapor Deposited MoS2 in Different Atmosphere

Substrate Modified Thermal Stability Of Mono- And Few-Layer Mos2

Impact of thermal annealing on the interaction between monolayer MoS2 and Au

Influence of Metal-Mos2 Interface on MoS2 Transistor Performance: Comparison of Ag and Ti Contacts.

The Thermal Stability Study and Improvement of 4H-Sic Ohmic Contact

Interfacial thermal resistance between mechanically exfoliated nm-thick MoS 2 and silicon from −60 °C to 50 °C based on ns-ET Raman technique

Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts

Interface transition from Ohmic to Schottky contact in Ti3X2/MoS2 (X= B, C, N): Insights from first-principles