Abstract:It is crucial to have a good phenomenological model of electronic stopping power for modeling the physics of ion implantation into crystalline silicon. In the spirit of the Brandt-Kitagawa effective charge theory, we develop a model for electronic stopping power for an ion, which can be factorized into (i) a globally averaged effective charge taking into account effects of close and distant collisions by target electrons with the ion, and (ii) a local charge density dependent electronic stopping power for a proton. This phenomenological model is implemented into both molecular dynamics and Monte Carlo simulations. There is only one free parameter in the model, namely, the one electron radius rs0 for unbound electrons. By fine tuning this parameter, it is shown that the model can work successfully for both boron and arsenic implants. We report that the results of the dopant profile simulation for both species are in excellent agreement with the experimental profiles measured by secondary-ion mass spectrometry(SIMS) over a wide range of energies and with different incident directions. We point out that the model has wide applicability, for it captures the correct physics of electronic stopping in ion implantation. This model also provides a good physically-based damping mechanism for molecular dynamics simulations in the electronic stopping power regime, as evidenced by the striking agreement of dopant profiles calculated in our molecular dynamics simulations with the SIMS data.

Modeling and Simulation of the Ion Implantation Metrology Based on Pump-Probe Technology

Modeling of a Diode Side Pumped Cesium Vapor Laser MOPA System

Modeling of a Diode Four-Side Pumped Cesium Vapor Laser Amplifier with Flowing Medium

Modeling of a diode transverse-pumped cesium vapor laser

A Stabilized Numerical Scheme to Simulate Synergistic Effect of TID and TDR in Semiconductor Devices

Measurement and Simulation of Ultra-Low-Energy Ion-Solid Interaction Dynamics

Investigation of the Doping Profile for Ion Implants and Rapid Annealing in Silicon Via an Improved Method

A phenomenological electronic stopping power model for molecular dynamics and Monte Carlo simulation of ion implantation into silicon

Simulation of phosphorus implantation into silicon with a single-parameter electronic stopping power model

Multiphysics modeling of plasmonic nanodevices

Characterizations on the Doping of Single-Crystal Silicon Carbide

Ion-Beam-Induced Defects in CMOS Technology: Methods of Study

A model-based automatic control algorithm for a laser anneal processing system

Simulations of the parameters in the focused ion beam implanted different materials

Studying shallow junction technology by atomistic modeling

Computer Simulation On Low Energy Ion Implantation Based On Molecular Dynamics Methods

Efficient atomistic method simuation on low energy doping and high temperature annealing technology

Physical Model for Ionizing Radiation Damage in Partially Depleted SOI Transistors

A behavioral model for electron irradiation effect on the DC performance in InP-based HEMT

Nondestructive Evaluation of Semiconductors by Photoacoustic Imaging with High-Frequency Air Transducer

Multi-model Simulation of 300 Mm Silicon-Nitride Thin-Film Deposition by PECVD and Experimental Verification