Room-temperature Low-Threshold Avalanche Effect in Stepwise Van-Der-waals Homojunction Photodiodes

Hailu Wang,Hui Xia,Yaqian Liu,Yue Chen,Runzhang Xie,Zhen Wang,Peng Wang,Jinshui Miao,Fang Wang,Tianxin Li,Lan Fu,Piotr Martyniuk,Jianbin Xu,Weida Hu,Wei Lu
DOI: https://doi.org/10.1038/s41467-024-47958-2
IF: 16.6
2024-01-01
Nature Communications
Abstract:AbstractAvalanche or carrier-multiplication effect, based on impact ionization processes in semiconductors, has a great potential for enhancing the performance of photodetector and solar cells. However, in practical applications, it suffers from high threshold energy, reducing the advantages of carrier multiplication. Here, we report on a low-threshold avalanche effect in a stepwise WSe2 structure, in which the combination of weak electron-phonon scattering and high electric fields leads to a low-loss carrier acceleration and multiplication. Owing to this effect, the room-temperature threshold energy approaches the fundamental limit, Ethre ≈ Eg, where Eg is the bandgap of the semiconductor. Our findings offer an alternative perspective on the design and fabrication of future avalanche and hot-carrier photovoltaic devices.
What problem does this paper attempt to address?