Lattice Strain-Induced High-Performance Low-Operating-voltage Organic Field-Effect Transistors by Solution-Sheared Organic Single Crystal

Bowen Geng,Feng Zhang,Congcong Huang,Lihua He,Chengtai Li,Shuming Duan,Xiaochen Ren,Wenping Hu
DOI: https://doi.org/10.1039/d3tc04755e
IF: 6.4
2024-01-01
Journal of Materials Chemistry C
Abstract:Organic single-crystal semiconductors, characterized by their well-ordered long-range structure, facilitate efficient charge carrier transmission, resulting in a notable improvement in the functionality of organic optoelectronic devices, as illustrated by organic field-effect transistors (OFETs). Nevertheless, the widespread utilization of OFETs, especially in low-voltage operations (<5 V), is impeded by their suboptimal electrical performance. This work employs lattice strain engineering to enhance OFET performance utilizing inch-sized single crystals of the organic semiconductor C-8-BTBT. By modulating the shear speed during the solution shearing process, lattice strain is induced in the C-8-BTBT crystals, leading to a reduction in pi-pi stacking distance and thinner crystals, thereby mitigating injection resistance and enhancing charge transport capabilities. The lattice-strained single crystals demonstrate a significant enhancement in mobility, reaching 8.7 cm(2) V-1 s(-1) at -3 V in low-voltage single-crystal OFETs, surpassing the highest values among similar molecules based on high-k dielectrics. Additionally, inch-scale organic single crystals display outstanding uniformity, with a 2.99% mobility coefficient of variation of 30 devices. This work underscores the potential of lattice strain engineering for large-scale, high-performance, low-power organic circuit applications, paving the way for the development of cost-effective and efficient electronic devices based on organic materials.
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