Abstract:Electrical stability and field-effect mobility of two-dimensional (2D) material-based field-effect transistors (FETs) are extremely important for practical electronic applications. Interface scattering during the transmission of 2D materials, which can be significantly influenced by the interface between dielectric and 2D materials, remains a formidable challenge. Early work has achieved excellent mobility and on/off ratio, but the understanding and improvement of the electrical stability of MoS2 devices are still in their infancy. Herein, a facile and effective strategy is proposed via a spin-coated polymethyl methacrylate (PMMA) dual layer to enhance both field-effect mobility and electrical stability of molybdenum disulfide (MoS2) FETs, in which the PMMA underneath MoS2 works as a gate dielectric together with SiO2 and the PMMA on top of MoS2 is used to protect the FET channel from exposure to air. The field-effect electron mobility has been improved up to 2.5 times, from 41.8 to 104.6 cm(2)/Vs, by using PMMA/SiO2 as the back gate dielectric and PMMA capsulation layer. The time- and stress-dependent electrical stability has been essentially improved. A negligible threshold voltage shift (Delta Vth < 0.1 V) and field-effect mobility degradation (1.4%) are achieved upon a gate bias voltage of +/- 35 V applied for 300 s, even after 45 day storage in open air. The effective suppression of interface impurities located at the channel interface contributes to the electrical performance enhancement of MoS2 FETs. Furthermore, a theoretical model was developed to investigate different MoS2/dielectric interface structures by density functional theory (DFT), which is consistent with interface scattering theory. This study not only provides a clue for the high-performance 2D FET fabrication but also offers an opportunity to understand the electrical property degradation mechanism of the 2D material family devices, pushing forward their practical applications in the 2D devices and flexible electronics.

Self-Heating Effect in a MoS2 Field-Effect Transistor and Improved Heat Dissipation by the BN Capping Layer

Investigation on self-heating effect in carbon nanotube field-effect transistors

Electrothermal Characterization of Carbon Nanotube Field Effect Transistors (Cntfets)

Improved Thermal Dissipation in a MoS 2 Field-Effect Transistor by Hybrid High- k Dielectric Layers

Improved Thermal Dissipation in a MoS2 Field-Effect Transistor by Hybrid High-k Dielectric Layers

Construction of High Field-Effect Mobility Multilayer MoS2 Field-Effect Transistors with Excellent Stability Through Interface Engineering

Enhancement of Thermal Boundary Conductance Between MoS2 and Dielectric Layer by Self‐Assembled Monolayers

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

Modifying the Power and Performance of 2-Dimensional MoS 2 Field Effect Transistors

High field-effect performance and intrinsic scattering in the two-dimensional MoS2 semiconductors

The Heat Dissipation Path of Self-Heating Effects for the SOI MOSFET by Considering the BOX Layer and the TiN Barrier Layer

Multiscale Modeling Of Heat Dissipation In 2d Transistors Based On Phosphorene And Silicene

Thermal Management in MoS2 Based Integrated Device Using Near-Field Radiation

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

Intrinsic Electronic Properties of BN-Encapsulated,van Der Waals Contacted MoSe2 Field-Effect Transistors

Enhancing the Performance of MoS2 Field-Effect Transistors Using Self-Assembled Monolayers: A Promising Strategy to Alleviate Dielectric Layer Scattering and Improve Device Performance

Effect of Thickness and Thermal Treatment on the Electrical Performance of 2D MoS2 Monolayer and Multilayer Field-Effect Transistors

MoS2 Negative‐Capacitance Field‐Effect Transistors with Subthreshold Swing below the Physics Limit

Evolution Application of Two-Dimensional MoS2-Based Field-Effect Transistors

Improved performance in MoS2 homogeneous junction field effect transistors by optimizing electrodes contact