Abstract:The hard-to-process properties associated with high hardness and high brittleness of sapphire drastically limit the services of optics, low-damage or damage-free properties are essential to the performance of sapphire optics. To achieve efficient and damage-free sapphire optics, a series of experiments involving ultra-precision grinding, polishing, and ion beam polishing were conducted. Initially, the surface and subsurface characteristics of sapphire ultra-precision grinding were examined, and the evolution of damage during polishing was discussed. Chemical etching was performed to evaluate the subsurface damage caused by polishing, ion beam polishing was used to eliminate subsurface damage. Finally, focused ion beam (FIB) and transmission electron microscopy (TEM) were employed to analyze the atomic structure of the subsurface. The results demonstrated that ultra-precision grinding can produce a ductile grinding surface and minimize subsurface damage, the difference in grinding damage on the outside and center of the workpiece was suppressed. The evolution of the surface roughness and damage behavior during polishing varied depending on the specific grinding strategy, ultra-precision grinding decreased damage removal time by 1/4. Photothermal absorption was utilized to monitor the damage progression during the polishing process and detect the presence of subsurface damage beneath the Beilby layer. Etching revealed that the subsurface damage was primarily caused by scratches, which was effectively eliminated after ion beam polishing. High-magnification TEM images provided compelling evidence of damage at the close-to-atomic scale for sapphire optics. Only amorphous structures smaller than 2 nm were observed on the subsurface, most of the atomic structure remained intact, albeit with irregular arrangement. Additionally, the grinding marks were mitigated after polishing.

Removal Mechanism of Sapphire Substrates (0001, 112¯0 and 101¯

Chemical mechanical polishing (CMP) anisotropy in sapphire

AFM and XPS Studies on Material Removal Mechanism of Sapphire Wafer During Chemical Mechanical Polishing (CMP)

Study on Chemical Mechanical Polishing Performances of Sapphire Wafer (0001) Using Silica-Based Slurry

Removal mechanism of the chemical products layer on single-crystal sapphire surface in magneto-rheological polishing with Fe3O4/SiO2 core-shell abrasives

A Study of Chemical Products Formed on Sapphire (0001) During Chemical–mechanical Polishing

Atomic Step Morphology Research of LED Sapphire Substrate Polishing Surface and Its Periodicity

Novel model of material removal rate on ultrasonic-assisted chemical mechanical polishing for sapphire

Anisotropy of Chemical Mechanical Polishing in Silicon Carbide Substrates

Realization of atomic-level smooth surface of sapphire (0001) by chemical-mechanical planarization with nano colloidal silica abrasives

Investigation into the Anisotropy of Cross-Grinding Surface Quality in C- and M-planes of Sapphire

Tribochemical mechanisms of abrasives for SiC and sapphire substrates in nanoscale polishing

Effect of Chloride Ions on the Chemical Mechanical Planarization Efficiency of Sapphire Substrate

Effect of different grinding strategies on subsequent polishing processes of sapphire

An in Situ Study of Chemical-Mechanical Polishing Behaviours on Sapphire (0001) Via Simulating the Chemical Product-Removal Process by AFM-tapping Mode in Both Liquid and Air Environments

Surface Integrity and Removal Mechanism in Grinding Sapphire Wafers with Novel Vitrified Bond Diamond Plates

Characterization of sapphire chemical mechanical polishing performances using silica with different sizes and their removal mechanisms

Effects of Silica Abrasive Size on Sapphire Cmp Performances and Their Removal Mechanisms

Experimental Study of Ultrasonic Vibration Assisted Chemical Mechanical Polishing for Sapphire Substrate

Micro-mechanism of glycine action in tribochemical mechanical polishing of single-crystal sapphire substrate: Experimental and first-principles analysis

Nanomaterials and Equipment for Chemical-Mechanical Polishing of Single-Crystal Sapphire Wafers