An Analytical Approach of Field Profile of P-N Junction

Zhaoji Li

1990-01-01

Chinese Journal of Semiconductors

Abstract:A trans cendental equation of potential and electronic field of a p-n junction are solvedwith weighted algorithm for least squares. A matched and unified solution, which are usefulfor research of high-voltage devices, are obtained between cylindric and planar junctions underasymmetry and elliptic cylindric.

What problem does this paper attempt to address?

Simulation of P-N Junction Properties of Nanowires and Nanowire Arrays

Jun Hu,Yang Liu,Alex Maslov,Cun-Zheng Ning,Robert Dutton,Sung-Mo Kang

DOI: https://doi.org/10.1117/12.701210

2007-01-01

Abstract:The unique properties of semiconductor nanowires pose promising applications in optoelectronics such as photo-detectors and lasers. Owing to the increased surface/volume ratio, nanowire-based p-n junctions exhibit qualitatively different properties from those of bulk cases. These include weaker electrostatic screening and stronger fringe field effects. This work employs a general device simulator, PROPHET, to numerically investigate the unique electrical properties of p-n junctions in single nanowires and nanowire arrays. The implications of such effects in nanowire-based photo-detector design are also examined.
A Concise Analytical Approach For Predicting The Voltage And Edge Peak Field Profiles Of The Planar Junction With A Single Floating Field Limiting Ring

J He,X Zhang,Yy Wang

DOI: https://doi.org/10.1080/00207210110063539

2001-01-01

International Journal of Electronics

Abstract:A concise analytical approach for predicting the voltage and edge peak field profiles of the planar junction with a single floating field limiting ring is proposed in this paper. From this analysis, the effects of the background doping concentration, junction depth and reversed voltage on the voltage and edge peak field profiles are analysed. The optimal distance between the main junction and the ring junction is also obtained. The analytical results are in excellent agreement with that of the two-dimensional semiconductor device simulator DESSIS-ISE, showing the validity of the approach presented.
Analytical Solutions for Breakdown Voltage and Electric Field Distribution along Junction Edge for Planar Abrupt Junction

何进

DOI: https://doi.org/10.3969/j.issn.1671-4776.2001.01.014

2001-01-01

Abstract:Based on the elliptic shape assumption of p n junction metallurgical boundary which is a exactly approximation to the practical diffused junction edge,the analytical solutions for the breakdown voltage and electric field distribution along the junction edge have been obtained.Effects of the ratio of the lateral junction depth to the bulk junction depth,normalized junction depth and the location angle along the junction edge on the breakdown voltage and maximum electric field have been discussed.Theory results explain why the surface electric field is always larger than the bulk and the breakdown frequently occurs at the surface.
An analytical model for electric field distribution of positively beveled abrupt PN junctions

Xing Bi Chen,J. K. O. Sin,Min Zhang,Bin Wang

DOI: https://doi.org/10.1109/16.568051

1997-01-01

Abstract:An analytical model for the electric field distribution of positively beveled abrupt p-n junctions is presented. Simple expressions for the depletion width at the surface and the maximum field as a function of beveled angle have also been obtained. The analytical results show very good agreement compared with those obtained from numerical simulations. By using the method of superposition of a “common-mode” abrupt junction and a “differential-mode” abrupt junction, the model is also valid for the case of a dielectric with large permittivity covering the beveled surface
Electric Field Distribution in Charge Imbalance Super Junction

Fang Jian,Qiao Ming,Li Zhao-Ji

DOI: https://doi.org/10.7498/aps.55.3656

2006-01-01

Abstract:2D analytic models for the electric field distribution of charge imbalance SJ structures, such as concentration and width imbalance, trapezoid n-/p- regions and lateral linearly graded doping have been presented. The comparison of the 2D analytic model with numerical device simulations shows that the proposed model can accurately predict electric field distribution. Although this solution is in the form of trigonometric series, some most important information also can be obtained from this solution. For example, the peak electric field and breakdown voltage in charge imbalance SJ structure can be obtained from the results of this paper.
Equivalent Doping Profile Transformation: a New Analytical Method to Predict Breakdown Voltage of the Composite Pn Junction

J He,YX Li,X Zhang,YY Wang

DOI: https://doi.org/10.1080/00207210110081133

2001-01-01

International Journal of Electronics

Abstract:This paper describes a new analytical method called the equivalent doping profile of a composite p–n junction, that is, a simplified diffused junction with a linear gradient G L on the diffused side and a constant concentration N sub on the substrate. The analytical results for various combinations of the substrate doping concentration and the diffused side gradient levels agree well with the numerical analysis, showing the validity of the method presented here.
2-Dimensional Analysis of Surface Electric Field Profile of Planar Junction with Single-Step Field-Plate Termination Structure

何进,张兴,黄如,王阳元

DOI: https://doi.org/10.3969/j.issn.1674-4926.2001.07.020

2001-01-01

Chinese Journal of Semiconductors

Abstract:Based on Poisson Equation,an analytical model is proposed for the 2 dimensional surface electric field profile of the planar junction with a single step filed plate structure for the first time.The dependence on the doping concentration,field plate thickness and length of the surface electric field profile has been analyzed.The calculated breakdown voltages show good agreement with the previous numerical results.The presented analytical model is especial useful in design of the filed plate termination of the power devices and SPIC.
Electromechanical Fields Near a Circular PN Junction Between Two Piezoelectric Semiconductors

Yixun Luo,Ruoran Cheng,Chunli Zhang,Weiqiu Chen,Jiashi Yang

DOI: https://doi.org/10.1007/s10338-018-0010-1

2018-01-01

Abstract:We study electromechanical fields near the interface between a circular piezoelectric semiconductor cylinder and another piezoelectric semiconductor in which it is embedded. The cylinder is p-doped. The surrounding material is n-doped. The phenomenological theory of piezoelectric semiconductors consisting of the equations of piezoelectricity and the conservation of charge for holes and electrons is used. The theory is linearized for small carrier concentration perturbations. An analytical solution is obtained, showing the formation of a PN junction near the interface. Various electromechanical fields associated with the junction are calculated. The effects of a few physical parameters are examined.
A New Quasi 2-Dimensional Analytical Approach to Predicting RingJunction Voltage,Edge Peak Fields and Optimal Spacing of PlanarJunction with Single Floating Field Limiting Ring Structure

何进,张兴,黄如,王阳元

DOI: https://doi.org/10.3969/j.issn.1674-4926.2001.06.005

2001-01-01

Chinese Journal of Semiconductors

Abstract:WT8.BZ]A new quasi 2-dimensional analytical approach to predicting the ring voltage,edge peak fields and optimal spacing of the planar junction with a single floating field limiting ring structure has been proposed,based on the cylindrical symmetric solution and the critical field concept.The effects of the spacing and reverse voltage on the ring junction voltage and edge peak field profiles have been analyzed.The optimal spacing and the maximum breakdown voltage of the structure have also been obtained.The analytical results are in excellent agreement with that obtained from the 2-D device simulator,MEDICI and the reported result,which proves the presented model valid.
Equivalent Junction Transformation: A Semi-Empirical Analytical Method For Predicting The Breakdown Characteristics Of Cylindrical- And Spherical-Abrupt Pn Junctions

J He,X Zhang,R Huang,Yy Wang

DOI: https://doi.org/10.1016/S0038-1101(00)00181-7

IF: 1.916

2000-01-01

Solid-State Electronics

Abstract:A semi-empirical analytical method called as the equivalent junction transformation has been proposed in this paper for the first time, and used to predict the breakdown characteristics of curved-abrupt P-N junctions. Based on this method, the effects of the radius of curvature of the metallurgical junction and the background doping concentration on the breakdown voltage, peak electrical field and depletion layer width at breakdown for cylindrical- and spherical-abrupt junctions are discussed in detail. All analytical results have shown in excellent agreement with the numerical analysis, showing the validity of the method presented here. (C) 2000 Elsevier Science Ltd. All rights reserved.
Equivalent doping profile transformation: a semi-empirical, analytical method for predicting breakdown characteristics of an approximate single-diffused parallel-plane junction

Jin He,Xing Zhang,Yangyuan Wang

DOI: https://doi.org/10.1109/16.974701

IF: 3.1

2001-01-01

IEEE Transactions on Electron Devices

Abstract:In this paper, a semi-empirical analytical method called the equivalent doping profile transformation method (EDPTM) has been proposed for the first time to predict the breakdown characteristics of an approximate single-diffused parallel-plane pn-junction that has a doping profile of the combination of a diffused side linear gradient constant and a constant substrate doping concentration, which co...
The Theoretical Simulation of PN Junction Based on III-Nitride Compounds

A. Alasmari,A. Hendi,M. Alanazi,M. Almoneef,M. A. Awad,K. Ortashi,A. Laref

DOI: https://doi.org/10.1166/eef.2023.1293

2023-12-01

Energy and Environment Focus

Abstract:This research work describes numerical solutions based on one-dimensional Poisson finite element technique. In order to achieve this, a PN junction based on III-V nitride semiconductors is built to examine the electrostatic potential energy profile and charge concentration at equilibrium condition. In addition, the zero bias voltage is involved on p -type and n -type semiconductors. Using the Newton-Raphson technique, the potential distribution of semiconductor devices are computed and discussed.
Gate Tunable Lateral 2D pn Junctions: An Analytical Study of Its Electrostatics

Ferney A. Chaves,Anibal Pacheco-Sanchez,David Jimenez

DOI: https://doi.org/10.1109/TNANO.2023.3238815

2023-01-30

Abstract:The electrostatics of two-dimensional (2D) lateral pn homojunctions considering the impact of electrostatic doping by means of two split bottom-gates are studied here. Analytical expressions are obtained from the solution of the 2D Poisson equation considering a depletion approximation. Straightforward analytical models for the electrostatic potential and the depletion width within both the dielectric and the 2D semiconductor are obtained for both the symmetrical and asymmetrical cases. In contrast to the case of devices with chemical doping, the obtained depletion width model of devices with electrostatic doping do not depend on the dielectric constant but only on the electrostatic potential and oxide thickness. The models describe the electrostatics of gate-tunable 2D pn junctions at arbitrary bias. A benchmark against numerical device simulations of MoS2-based pn junctions validate the analytical models.

Mesoscale and Nanoscale Physics
Analytical Model of Three-Dimensional Effect on Voltage and Edge Peak Field Distributions and Optimal Space for Planar Junction with a Single Field Limiting Ring

J He,R Huang,X Zhang,YY Wang,XB Chen

DOI: https://doi.org/10.1016/s0038-1101(00)00226-4

2003-01-01

Abstract:An analytical model of the three-dimensional (3-D) effect due to the lateral radius of the main junction and width of the ring junction on voltage and edge peak field profiles for the planar junction with a single floating electrical field limiting ring structure have been proposed for the first time. From this model analysis, the influence on the voltage and edge peak field of the reverse voltage, 3-D factors such as lateral curvature of the main junction and width of the ring junction, space distance between the main junction and ring junction and junction depth are analyzed, and then the expressions for predicting the optimal space and maximum breakdown voltage are also obtained. The analytical results are in agreement with the previous numerical analysis.
ANALYSIS OF JANUS PARTICLES IN ELECTRIC FIELD

Ze CHENG,Jie PENG

DOI: https://doi.org/10.6052/1000-0879-17-334

2018-01-01

Abstract:In this study, the dynamical characteristics of two-dimensional Janus particles in infinite electrolyte solution in the presence of an external electric field are considered. The equations for the electroosmotic flow in the electrolyte solution are established and decoupled on the basis of the order analysis. By introducing the finite computational domain to ensure the existence of the solution, the analytic solution of the electric field and the semi-analytical solution of the flow field around the circular particles are obtained. The relationship between the moments of the particle and the direction of the external electric field is obtained. The equilibrium attitude and the stability characteristics of the two-dimensional Janus particles are thus obtained.
Analytical Short-Channel Behavior Models of Junctionless Cylindrical Surrounding-Gate Mosfets

Chunsheng Jiang,Renrong Liang,Jing Wang,Jun Xu

DOI: https://doi.org/10.1109/isne.2014.6839323

2014-01-01

Abstract:An analytical electrostatic potential model for Junctionless Cylindrical Surrounding-Gate (JLCSG) MOSFETs was developed by solving the 2-D Poisson equation based on parabolic approximation. Furthermore, the expression of electrostatic potential was used to derive the formulas for scale length, threshold voltage, subthreshold slope, and subthreshold drain current. The calculated results of the analytical models are consistent with those of a 3-D numerical simulator without any fitting parameters for various device parameters and bias conditions. This analytical model can serve as a guide in the design of JLCSG MOSFET circuits.
Computation of Charge Collection Probability for Any Collecting Junction Shape

Oka Kurniawan,Vincent K. S. Ong,Chee Chin Tan,Erping Li

2009-01-01

Abstract:Electron-beam-induced current (EBIC) of the scanning electron microscope (SEM) has been widely used for semiconductor devices and materials characterizations. The charge collection probability within a collecting junction plays an important role in determining the EBIC current. The conventional approach starts by solving the continuity equation to obtain the charge carrier density and then the analytical expression for the charge collection probability. Knowing the analytical expression of the charge collection probability enhances the study and development of the measurement technique. However, the conventional method usually requires lot of mathematical effort and the derived analytical expression is valid only for one particular junction shape. This paper presents a simple and straight forward computational method for the charge collection probability distribution within the charge collecting junction well by utilizing the reciprocity theorem and finite difference method with the junction shape serves as the boundary conditions. It not only simplifies the computation but also applicable to any junction shape as long as the drift-diffusion model remains valid. This method was verified using a U-shaped junction well.
Equivalent junction method to predict 3-D effect of curved-abrupt p-n junctions

Jin He,Xuemei Xi,Mansun Chan,Chenming Hu,Yingxue Li,Xing Zhang,Ru Huang,Yangyuan Wang

DOI: https://doi.org/10.1109/TED.2002.1013296

2002-01-01

Abstract:In this brief, an equivalent junction method is proposed to study three-dimensional (3-D) effect of the lateral curvature on curved-abrupt junctions. Analytical expressions including 3-D effect are derived to calculate the breakdown voltage, peak electrical field, and maximum depletion layer width of curved-abrupt junctions. The breakdown voltages calculated from the new analytic expression have been verified by the numerical simulation and experimental data. The equivalent junction model provides a simple means for device engineers to estimate the required substrate doping concentration, lateral curvature, junction depth and depletion width of a planar p-n junction with a specific breakdown voltage
Analytical Models for Electric Potential, Threshold Voltage, and Subthreshold Swing of Junctionless Surrounding-Gate Transistors

Guangxi Hu,Ping Xiang,Zhihao Ding,Ran Liu,Lingli Wang,Ting-Ao Tang

DOI: https://doi.org/10.1109/TED.2013.2297378

IF: 3.1

2014-01-01

IEEE Transactions on Electron Devices

Abstract:Analytical models for electric potential, threshold voltage, and subthreshold swing of the junctionless surrounding-gate field-effect transistors are presented. Poisson equation is solved and the electric potential is obtained. With the potential model, explicit expressions for threshold voltage and subthreshold swing are obtained. The analytical results are compared with those from simulations an...
A Study of Subthreshold Behavior of Short-Channel Junctionless Cylindrical Surrounding-Gate MOSFETs from an Electrostatic Potential Viewpoint

Chunsheng Jiang,Renrong Liang,Jing Wang,Jun Xu

DOI: https://doi.org/10.1109/isne.2015.7131955

2015-01-01

Abstract:An analytical electrostatic potential model for Junctionless Cylindrical Surrounding-Gate (JLCSG) MOSFETs was developed by solving the 2-D Poisson equation based on a method of series expansion similar to Green's function. Subthreshold behavior was studied in detail by changing different device parameters and bias conditions, including doping concentration, channel thickness, gate length, gate oxide thickness, drain voltage, and gate voltage. The calculated results of the analytical models are consistent with those of a 3-D numerical simulator without any fitting parameters for various device parameters and bias conditions. This analytical model can be used to investigate the operating mechanisms of nanoscale JLCSG MOSFETs and to optimize their device performance.

An Analytical Approach of Field Profile of P-N Junction

Simulation of P-N Junction Properties of Nanowires and Nanowire Arrays

A Concise Analytical Approach For Predicting The Voltage And Edge Peak Field Profiles Of The Planar Junction With A Single Floating Field Limiting Ring

Analytical Solutions for Breakdown Voltage and Electric Field Distribution along Junction Edge for Planar Abrupt Junction

An analytical model for electric field distribution of positively beveled abrupt PN junctions

Electric Field Distribution in Charge Imbalance Super Junction

Equivalent Doping Profile Transformation: a New Analytical Method to Predict Breakdown Voltage of the Composite Pn Junction

2-Dimensional Analysis of Surface Electric Field Profile of Planar Junction with Single-Step Field-Plate Termination Structure

Electromechanical Fields Near a Circular PN Junction Between Two Piezoelectric Semiconductors

A New Quasi 2-Dimensional Analytical Approach to Predicting RingJunction Voltage,Edge Peak Fields and Optimal Spacing of PlanarJunction with Single Floating Field Limiting Ring Structure

Equivalent Junction Transformation: A Semi-Empirical Analytical Method For Predicting The Breakdown Characteristics Of Cylindrical- And Spherical-Abrupt Pn Junctions

Equivalent doping profile transformation: a semi-empirical, analytical method for predicting breakdown characteristics of an approximate single-diffused parallel-plane junction

The Theoretical Simulation of PN Junction Based on III-Nitride Compounds

Gate Tunable Lateral 2D pn Junctions: An Analytical Study of Its Electrostatics

Analytical Model of Three-Dimensional Effect on Voltage and Edge Peak Field Distributions and Optimal Space for Planar Junction with a Single Field Limiting Ring

ANALYSIS OF JANUS PARTICLES IN ELECTRIC FIELD

Analytical Short-Channel Behavior Models of Junctionless Cylindrical Surrounding-Gate Mosfets

Computation of Charge Collection Probability for Any Collecting Junction Shape

Equivalent junction method to predict 3-D effect of curved-abrupt p-n junctions

Analytical Models for Electric Potential, Threshold Voltage, and Subthreshold Swing of Junctionless Surrounding-Gate Transistors

A Study of Subthreshold Behavior of Short-Channel Junctionless Cylindrical Surrounding-Gate MOSFETs from an Electrostatic Potential Viewpoint