Gate Tunable Lateral 2D pn Junctions: An Analytical Study of Its Electrostatics

Ferney A. Chaves,Anibal Pacheco-Sanchez,David Jimenez

DOI: https://doi.org/10.1109/TNANO.2023.3238815

2023-01-30

Abstract:The electrostatics of two-dimensional (2D) lateral pn homojunctions considering the impact of electrostatic doping by means of two split bottom-gates are studied here. Analytical expressions are obtained from the solution of the 2D Poisson equation considering a depletion approximation. Straightforward analytical models for the electrostatic potential and the depletion width within both the dielectric and the 2D semiconductor are obtained for both the symmetrical and asymmetrical cases. In contrast to the case of devices with chemical doping, the obtained depletion width model of devices with electrostatic doping do not depend on the dielectric constant but only on the electrostatic potential and oxide thickness. The models describe the electrostatics of gate-tunable 2D pn junctions at arbitrary bias. A benchmark against numerical device simulations of MoS2-based pn junctions validate the analytical models.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is about the electrostatic characteristics of two - dimensional (2D) lateral pn junctions, especially the influence of achieving electro - electrostatic doping through two separate bottom gates. Specifically, the main objectives of the paper include:

1. **Study the influence of electro - electrostatic doping on 2D lateral pn junctions**: Different from chemical doping, electro - electrostatic doping can control the carrier concentration region through the external gate voltage. The paper explores how this new doping method affects the electrostatic potential and depletion region width of the device.

2. **Establish an analytical model**: By solving the 2D Poisson equation, the author obtains analytical expressions for the electrostatic potential and depletion region width applicable to both symmetric and asymmetric cases. These models not only describe the electrostatic characteristics of the device under any bias conditions but also verify their consistency with numerical simulation results.

3. **Compare with traditional doping methods**: Compared with chemically - doped devices, the depletion region width model of electro - electrostatic - doped devices does not depend on the dielectric constant but only on the electrostatic potential and oxide layer thickness. This provides a new perspective for understanding and designing new electronic devices based on 2D materials.

### Specific problem summary

- **Analytical expressions of electrostatic potential and depletion region width**: The paper obtains expressions for electrostatic potential and depletion region width by analytical methods, and these expressions are applicable to symmetric and asymmetric gate voltage tuning cases.

- **Solution of the 2D Poisson equation**: To obtain these analytical expressions, the author solves the 2D Poisson equation and takes into account the partial depletion effect.

- **Numerical verification**: The accuracy of the analytical model is verified by comparing with the numerical simulation results of MoS₂ - based pn junctions.

- **Application prospects**: These models are helpful to reveal the internal physical mechanisms and provide theoretical support for further technological improvements, especially in the applications of optoelectronic devices, electronic devices and neuromorphic computing.

Through these studies, the paper provides an important theoretical basis for understanding the physical mechanism of electro - electrostatic doping in 2D materials and offers guidance for future design and optimization.