Abstract:Present work investigates the DC and Analog/RF characteristics such as the drain current ), Transconductance , Transconductance Generation Factor (TGF), Cut-off frequency , Frequency Transconductance Product (FTP), Transit time and the total resistance of the source region, drain region, and channel resistance for Dual Metal (DM) Inversion Mode (IM) and Junctionless (JL) Cylindrical Gate All Around (CGAA) Silicon nanowire (SiNW) MOSFETs with 5 nm gate length using Silvaco ATLAS 3D TCAD. In this work, the Non-Equilibrium Green's Function approach along with the self-consistent solution of Schrödinger's equation and Poisson's equation has been considered. The channel is taken to be lightly doped in the case of IM DM CGAA SiNW type of device. The effect of DM Gate work function engineering for SiNW channel of diameter 3 nm with gate oxide the thickness of 0.8 nm on , , TGF, , , FTP and has been studied. Moreover, a comparative study has been made between IMDM and JLDM CGAA SiNW devices with the above-mentioned parameters. For the JL device, the optimization of doping concentration is performed to get the same (i) I ON current and (ii) threshold voltage (V TH ) as the IM device. About 3.09 times and 21.89 times reduction in I OFF is seen for the same I ON and V TH optimized devices respectively as compared to IM device. It has been found that DM Gate variation minimizes drain-induced barrier lowering (DIBL) in IM and JL devices. The JL SiNW showed much lower DIBL ~ 16.46 mV/V, a near ideal SS ~ 60 mV/dec, and higher current ratio ~ 7.04 × 10 8 which is much better as compared to those reported in the literature for cylindrical gate all around (CGAA) devices. Also, it is found that the JL SiNW device performs better than IM in terms of SS, DIBL, , TGF, f T , , FTP and .

Non‐uniform doping dependent electrical parameters of dual‐metal gate all around junctionless accumulation‐mode nanowire FET ( DMGAA‐JAM‐NWFET )

DC and Analog/RF Performance Evaluation Using Dual Metal Gate Work Function Engineering of Junctionless Cylindrical Gate All Around Si Nanowire MOSFET Using NEGF Approach for Upcoming Sub 5 nm Technology Node

Small Signal Parameters Extraction and RF Performance of GaN-Based Dual-Metal Cylindrical Surrounding Gate Junctionless Accumulation-Mode (DM-CSG-JAM) MOSFET

A Novel Approach to Model Threshold Voltage and Subthreshold Current of Graded-Doped Junctionless-Gate-All-Around (GD-JL-GAA) MOSFETs

A Junctionless Nanowire Transistor with a Dual-Material Gate

Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors

Surface-Potential-Based Drain Current Model of Gate-All-Around Tunneling FETs

Gate Tunable Lateral 2D pn Junctions: An Analytical Study of Its Electrostatics

Analysis on effect of lateral straggle on analog, high frequency and DC parameters in Ge‐source DMDG TFET

Noise Analysis of NC-GAAFET Cylindrical Nanowire with Non-Uniform Interface Trap Charge

Accurate 2-D analytical model for cylindrical gate-junctionless ferroelectric-nanowire (CG-JFe-NW) MOSFET with scaled channel length.

Analytical Current Model for Long-Channel Junctionless Double-Gate Mosfets

Circuit Level Analysis of a Dual Material Graded Channel (DMGC) Cylindrical Gate All Around (CGAA) FET at Nanoscale Regime

Numerical Study On Dual Material Gate Nanowire Tunnel Field-Effect Transistor

A Two-Dimensional Analytical Model for Short Channel Junctionless Double-Gate MOSFETs

Analytical Drain Current Modeling of Dual-Material Surrounding-Gate MOSFETs.

Impact of asymmetrical source/drain offsets on the operation of dual-gated poly-Si junctionless nanowire transistors

An Analytical Model of Gate-All-Around Heterojunction Tunneling FET

On the grain boundary charge transport in p-type polycrystalline nanoribbon transistors

Analytical Drain Current Model of Strained Junctionless Nanowire Tunnel Field‐effect Transistor Fabricated on Virtual Substrate

A Non-Charge-Sheet Analytic Model for Symmetric Double-Gate MOSFETs With Smooth Transition Between Partially and Fully Depleted Operation Modes