Abstract:Nanowires, due to their unique properties, are emerging as the building blocks of the next-generation electronics industry and will play a critical role in both low- and high-performance circuits and systems. This work presents the design, optimization, and analysis of a silicon (Si) and gallium-nitride nanowire field-effect transistor (GaN NW FET) to evaluate its performance at the ultra-scaled device dimensions required for GaN NW FETs in the electronics industry in order to increase the packing density and overall performance of the device. The analysis was carried out using self-consistent Poisson and Schrödinger equations based on a non-equilibrium Green function (NEGF) approach using Silvaco ATLAS. A reduction of 84.07% in the 'off' current was observed for the GaN NW FET, as compared to its Si counterparts, which reveals the requirement for a GaN NW FET at extremely scaled dimensions for 'off' state leakage suppression. Optimization of the electrostatic control mechanism, gate oxide, gate oxide thickness (tox), and metal work functions (ms) was performed using quantum simulation models to investigate the influence of these parameters on the device performance. A way of improving the Ion/Ioff ratio of the device has been reported using metal contact length and width variations. A 40% reduction in the subthreshold swing value offers improvements in the electrostatic control Ion/Ioff ratio of ~104, ~105, and 102 due to the respective optimizations of the metal contact length (Lc), metal contact width (Wc), and metal work function (ms) of the GaN NW FET, compared to the Si NW FET, thus making the GaN NW FET an intriguing option for digital electronics applications. A comparison of the semi-classical (Drift Diffusion_Mode Space) and quantum (Non-Equilibrium Green Function_Mode Space) transport models was also carried out to reveal the importance of the accuracy of these models at such low dimensions. This optimization and analysis will help us to further improve the performance of experimental work and will act as a reference for the same. This study reveals the performance advantages of the GaN NW FET over the Si NW FET for transistor applications in the electronics industry and can serve as a reference point for the researchers working in this area. To the best of our knowledge, no such comparison has been reported so far for Si and GaN NW FETs using 3 nm technology.

Noise Analysis of NC-GAAFET Cylindrical Nanowire with Non-Uniform Interface Trap Charge

Capacitance Model for Nanowire Gate-All-around Tunneling Field-Effect-transistors

Investigation of 4H-SiC gate-all-around cylindrical nanowire junctionless MOSFET including negative capacitance and quantum confinements

A Non-Quasi-static Model for Nanowire Gate-All-around Tunneling Field-Effect Transistors

DC and Analog/RF Performance Evaluation Using Dual Metal Gate Work Function Engineering of Junctionless Cylindrical Gate All Around Si Nanowire MOSFET Using NEGF Approach for Upcoming Sub 5 nm Technology Node

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

Impact of Gate Dielectric Geometry on the Nanowire MOSFETs Performance and Scaling

Investigation on electrical parameters between single and double material gate nanoribbon FETs including trap distributions

Impact of source/drain lateral straggle on GIDL current of low SS NC-FinFET

The Investigation of Negative Capacitance Vertical Nanowire FETs Based on SPICE Model at Device-Circuit Level

Performance Limit of Gate-All-Around Si Nanowire Field-Effect Transistors: an Ab Initio Quantum Transport Simulation

Investigation of Negative Capacitance Gate-all-Around Tunnel FETs Combining Numerical Simulation and Analytical Modeling

Gate Electrostatic Controllability Enhancement in Nanotube Gate all Around Field Effect Transistor

Study of low frequency noise behavior in silicon nanowire transistors fabricated with top-to-down approach

Analysis of gate-induced drain leakage in gate-all-around nanowire transistors

Gate-all-around NWFETs vs. triple-gate FinFETs: Junctionless vs. extensionless and conventional junction devices with controlled EWF modulation for multi-VT CMOS

Nonideality of Negative Capacitance Ge Field-Effect Transistors Without Internal Metal Gate

New Observation On Gate-Induced Drain Leakage In Silicon Nanowire Transistors With Epi-Free Cmos Compatible Technology On Soi Substrate

Design, optimization, and analysis of Si and GaN nanowire FETs for 3 nm technology

Impact of Interface Trap Charges on Silicon Carbide (4H-SiC) Based Gate – Stack, Dual Metal, Surrounding Gate, FET (4H-SiC- GSDM-SGFET) for Analog and Noise Performance Analysis for 5G/LTE Applications

Gate tunneling in nanowire MOSFETs