Abstract:Peculiar electronic properties of graphene, including the universal dc conductivity and the pseudodiffusive shot noise, are usually attributed to a small vicinity of the charge-neutrality point, away from which electron's effective mass raises, and nanostructures in graphene start to behave similarly to familiar Sharvin contacts in semiconducting heterostructures hosting two-dimensional electron gas. Using the effective Dirac equation for low-energy excitations it can be shown that, as long as abrupt potential steps separate the sample area from the leads, graphene-specific features can be identified even relatively far from the charge-neutrality point. Namely, the conductance is reduced, comparing to the standard Sharvin value, whereas the shot noise is amplified. Here, we confront the results of earlier analytic considerations with numerical simulations of quantum transport on the honeycomb lattice, for selected systems for which considerations starting from the Dirac equation cannot be directly adapted. For a wedge-shape constriction with zigzag edges and approximately square shape of the narrowest section, the transport characteristics can be tuned from graphene-specific sub-Sharvin values to standard Sharvin values, depending on whether the electrostatic potential profile in the narrowest section is rectangular or smooth. The half-Corbino disk with rectangular potential profile exhibits both the conductance and the noise close to the sub-Sharvin values. For a circular quantum dot with two narrow openings and irregular edges, the conductance is close to the Sharvin value, and the Fano factor approaches the value of $F=1/4$. This suggests that, in experimental attempt to verify the predictions for sub-Sharvin transport regime, one should focus rather on nanosystems, for which the scatterings on edges are insignificant next to the scatterings on sample-lead interfaces.

Conductance asymmetry of graphene pn junction

Understanding asymmetric transfer characteristics and hysteresis behaviors in graphene devices under different chemical atmospheres

Ballistic-Ohmic quantum Hall plateau transition in graphene pn junction

Electron Optics with P-N Junctions in Ballistic Graphene

Asymmetric transmission of electrons in ballistic graphene

Tunneling conductance of hybrid bilayer-single graphene junctions

Conductance modulation in graphene nanoribbon under transver-se asymmetric electric potential

Electronic transport properties of a tilted graphene pn junction

Dynamic Conductance in L-Shaped Graphene Nanosystems

Ballistic conductivity of graphene channel with p-n junction on ferroelectric domain wall

Conductance enhancement due to atomic potential fluctuations in graphene

Electron optics with ballistic graphene junctions

Charge transport and electron-hole asymmetry in low-mobility graphene/hexagonal boron nitride heterostructures

Quantum transport of Dirac fermions in selected graphene nanosystems away from the charge-neutrality point

Chemical Doping and Electron-Hole Conduction Asymmetry in Graphene Devices

Large-scale tight-binding simulations of quantum transport in ballistic graphene

Contacts and upstream modes explain the electron-hole asymmetry in the graphene quantum Hall regime

Size quantization of Dirac fermions in graphene constrictions

Electrically switchable tunneling across a graphene pn junction: evidence for canted antiferromagnetic phase in $ν=0$ state

Electronic Transport in Z-Shaped Graphene-Nanoribbons:Shape and Size Effects

Limits for the graphene on ferroelectric domain wall p-n-junction rectifier for different regimes of current