Abstract:Experimental setups for charge transport measurements are typically not compatible with the ultra-high vacuum conditions for chemical doping, limiting the charge carrier density that can be investigated by transport methods. Field-effect methods, including dielectric gating and ionic liquid gating, achieve too low a carrier density to induce electronic phase transitions. To bridge this gap, we developed an integrated flip-chip method to dope graphene by alkali vapour in the diffusive regime, suitable for charge transport measurements at ultra-high charge carrier density. We introduce a cesium droplet into a sealed cavity filled with inert gas to dope a monolayer graphene sample by the process of cesium atom diffusion, adsorption and ionization at the graphene surface, with doping beyond an electron density of $4.7\times10^{14}~\mathrm{cm}^{-2}$ monitored by operando Hall measurement. The sealed assembly is stable against oxidation, enabling measurement of charge transport versus temperature and magnetic field. Cyclotron mass inversion is observed via the Hall effect, indicative of the change of Fermi surface geometry associated with the Liftshitz transition at the hyperbolic $M$ point of monolayer graphene. The transparent quartz substrate also functions as an optical window, enabling non-resonant Raman scattering. Our findings show that chemical doping, hitherto restricted to ultra-high vacuum, can be applied in a diffusive regime at ambient pressure in an inert gas environment and thus enable charge transport studies in standard cryogenic environments

Chemical Doping and Electron-Hole Conduction Asymmetry in Graphene Devices

Understanding asymmetric transfer characteristics and hysteresis behaviors in graphene devices under different chemical atmospheres

Linear Tuning of Charge Carriers in Graphene by Organic Molecules and Charge-Transfer Complexes

Electron-Hole Symmetry Breaking in Charge Transport in Nitrogen-Doped Graphene

Unravelling Doping Effects on Pedot at the Molecular Level: from Geometry to Thermoelectric Transport Properties

Electronic Strengthening of Graphene by Charge Doping

Metal To Insulator Transition In Epitaxial Graphene Induced By Molecular Doping

Mass Inversion at the Lifshitz Transition in Monolayer Graphene by Diffusive, High-Density, On-Chip Doping

Energy Level Alignment and Charge Carrier Mobility in Noncovalently Functionalized Graphene

Top-Gate Dielectric Induced Doping And Scattering Of Charge Carriers In Epitaxial Graphene

Kinetic Ionic Permeation and Interfacial Doping of Supported Graphene.

Atomic Hole Doping of Graphene

Correlation-driven electron-hole asymmetry in graphene field effect devices

Mass inversion at the Lifshitz transition in monolayer graphene by diffusive, high-density, on-chip, doping

Atomically Well-defined Nitrogen Doping in the Cross-plane Transport through Graphene Heterojunctions

Unlocking the chemistry of graphene: the impact of charge carrier concentration on molecular adsorption on graphene

Effective Carrier Doping and Quantum Capacitance Manipulation of Graphene Through Two-Dimensional Solid Electrolytes of ScI3 and YBr3

Impurity induced spin gap asymmetry in nanoscale graphene

Gap Opening by Asymmetric Doping in Graphene Bilayers

Electronic inhomogeneities in graphene: the role of the substrate interaction and chemical doping

Impact of Extrinsic Interface Traps and Doping Atoms on Conductivity of Graphene Field Effect Devices