Impact of Extrinsic Interface Traps and Doping Atoms on Conductivity of Graphene Field Effect Devices

G.I. Zebrev,S.A. Shostachenko

DOI: https://doi.org/10.1088/1757-899X/475/1/012013

2019-06-25

Abstract:Near-interfacial oxide traps and chemical impurities on the graphene surface or at the graphene-dielectric interface can be a source of intentional or unintentional doping of graphene sheet. The efficiency of such chemical doping can vary in a wide range depending on parameters of graphene field effect devices. Mechanisms of such sensitivity of doping efficiency to the device characteristics need to be understood. The objective of this paper is to theoretically derive the analytical relations, adapted to the explicit calculation of graphene chemical doping.

Mesoscale and Nanoscale Physics,Materials Science,Applied Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: the influence of interface traps and doping atoms on the conductivity of graphene field - effect devices (GFETs). Specifically, the paper focuses on how to derive an analytical relationship applicable to the explicit calculation of graphene chemical doping through theoretical deduction, in order to understand the mechanism of the sensitivity of chemical doping efficiency to device characteristics.

### Specific background of the problem

1. **Characteristics of graphene**:
- Graphene is a two - dimensional single - layer carbon atom material with a unique honeycomb - like hexagonal lattice structure.
- It has excellent properties such as zero bandgap and high carrier mobility, making it a candidate material in electronics applications.

2. **Functional characteristics of graphene field - effect devices**:
- Although significant progress has been made in technology, the functional characteristics of GFETs are still far from perfect.
- Graphene is usually not an intrinsic material, and charged impurities or chemical atoms/molecules on its surface or at the graphene - dielectric interface can cause unintentional doping of graphene, resulting in charge - neutrality voltage shift, field - effect mobility and transconductance degradation.

3. **Influence of environmental charge trapping**:
- In order to comprehensively describe the operation of GFETs, all reliability issues related to environmental charge trapping must be controlled.

### Research objectives of the paper

The objective of the paper is to establish an analytical relationship applicable to the explicit calculation of graphene chemical doping through theoretical deduction. Specifically:

- **Study the influence of external doping on GFET characteristics**: Explore the influence of interface traps (such as oxide traps) and doping atoms on the conductivity of graphene.
- **Understand the sensitivity mechanism of doping efficiency**: Analyze the dependence of doping efficiency on device parameters (such as gate insulator thickness, dielectric constant, interface - trap energy density, initial charge - neutrality - point gate voltage, etc.).

### Main content

1. **Doping and epitaxial doping**:
- Chemical doping changes the carrier concentration and conductivity of graphene through external defects, atoms or chemical molecules.
- Doping can be achieved by adsorbing gas molecules (such as water molecules), and these molecules act as donors or acceptors to affect the electrical properties of graphene.

2. **Fermi level and charge density**:
- Through self - consistent calculation, the relationship between the Fermi level, the charge - neutrality - point gate voltage and the charge concentration in graphene is derived.
- Formulas (3) to (18) describe these relationships in detail, including the total carrier concentration \( S_N \) and the net charge density \( S_n \), as well as the change of the Fermi level with the gate voltage.

3. **Charge - neutrality - point gate voltage and chemical doping effect**:
- The formula for determining the position of the charge - neutrality point is derived, and the influence of chemical doping on the charge density of graphene is analyzed.
- The results show that the chemical doping efficiency strongly depends on the capacitance of the gate insulator (i.e., thickness and dielectric constant), as well as the initial charge - neutrality - point voltage and the energy density of interface traps.

### Conclusion

Through theoretical deduction, the paper obtains an explicit relationship for calculating the carrier concentration of GFETs under different parameters. These results are helpful for understanding the influence of chemical doping on the performance of GFETs and provide a theoretical basis for optimizing device design.

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