Contacts and upstream modes explain the electron-hole asymmetry in the graphene quantum Hall regime

Nicolas Moreau,Boris Brun,Sowmya Somanchi,Kenji Watanabe,Takashi Taniguchi,Christoph Stampfer,Benoît Hackens

DOI: https://doi.org/10.1103/PhysRevB.104.L201406

2021-03-18

Abstract:Observations of electron-hole asymmetry in transport through graphene devices at high magnetic field challenge prevalent models of the graphene quantum Hall effect. Here, we study this asymmetry both in conventional magnetotransport and in scanning gate microscopy maps measured in an encapsulated graphene constriction. We reveal that the presence of upstream modes and local doping in the vicinity of electrical contacts leads to a totally different picture of topological breakdown for electrons and holes, explaining the observed asymmetry.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: the asymmetry problem of electron and hole transport behaviors in the graphene quantum Hall effect (QHE). Specifically, in the transport experiments conducted through graphene devices under high magnetic fields, the observed electron - hole asymmetry challenges the existing graphene quantum Hall effect models. This paper aims to reveal the origin of this asymmetry and explain the physical mechanism behind it.

### Main Research Contents

1. **Phenomenon Description**:
- Under high magnetic fields, the electron and hole transports in graphene devices show significant asymmetry.
- The traditional quantum Hall effect models cannot explain this asymmetry.

2. **Research Methods**:
- Use conventional magnetic transport measurements and scanning gate microscope (SGM) imaging techniques to study the encapsulated graphene slit structures.
- Combine tight - binding simulations to analyze the spatial configurations of quantum Hall edge channels (QHECs) and their couplings with the contact regions.

3. **Discoveries and Explanations**:
- **Existence of Upstream Modes**: The research found that the existence of upstream modes (i.e., counter - propagating QHECs) and local doping near the electrical contacts leads to different pictures of electron and hole topological breakdowns.
- **Influence of Contact Regions**: The existence of the metal contact area leads to local doping, making the spatial configurations of QHECs near the contact area different for electrons and holes. For holes, the inner QHEC bypasses the contact area; while for electrons, the inner QHEC merges with the nearest outer QHEC.
- **Band Bending**: Due to band bending, there are upstream QHECs on both the electron side and the hole side. However, the different dopings in the contact area lead to electron - hole asymmetry.

4. **Theoretical Model**:
- A model based on the doping differences in the contact area is proposed to explain the different spatial configurations of electron and hole QHECs.
- This model is verified by tight - binding simulations, and the simulation results are consistent with the experimental data.

### Conclusions

This research shows that the electron - hole asymmetry in the graphene quantum Hall effect is mainly caused by the local doping in the contact area, which leads to different spatial configurations of electron and hole QHECs. This finding emphasizes the importance of considering the influence of the contact area when designing two - dimensional material samples, especially when these contact areas need to be coupled with topologically protected edge channels.

### Formula Summary

The key formula mentioned in the paper is:

\[ \Delta\phi = \sqrt{1 + 2\alpha e |W_{Cr} - W_G|} - 1/\alpha \]

where:
- \( W_{Cr} = 4.5 \, \text{eV} \) is the work function of chromium,
- \( W_G = 4.48 \, \text{eV} \) is the work function of graphene,
- \( \alpha = \frac{2e^2 t_{hBN}}{\epsilon_{hBN} \pi \hbar^2 v_F^2} \), where \( t_{hBN} \approx 20 \, \text{nm} \) is the vertical distance between graphene and the overlapping metal, \( \epsilon_{hBN} \) is the dielectric constant of hexagonal boron nitride, and \( v_F \approx 10^6 \, \text{m/s} \) is the Fermi velocity of graphene.

Through these studies, the author reveals the important influence of the contact area on the graphene quantum Hall effect and proposes a reasonable explanatory model.