Abstract:The existence of inequivalent valleys K and K' in the momentum space of two-dimensional hexagonal lattices provides a new electronic degree of freedom, the manipulation of which can potentially lead to new types of electronics, in analogy to the role played by electron spin. In materials with broken inversion symmetry, such as an electrically gated bilayer graphene, the momentum-space Berry curvature $\Omega$ carries opposite sign in the K and K' valleys. A sign reversal of $\Omega$ along an internal boundary of the sheet gives rise to counter-propagating one-dimensional conducting modes encoded with opposite valley indices. These metallic states are topologically protected against backscattering in the absence of valley-mixing scattering, and thus can carry current ballistically. In bilayer graphene, the reversal of $\Omega$ can occur at the domain wall of AB and BA stacked domains, or at the line junction of two oppositely gated regions. The latter approach can provide a scalable platform to implement valleytronic operations such as valves and waveguides, but is technically challenging to realize. Here we fabricate a dual-split-gate structure in bilayer graphene and demonstrate transport evidence of the predicted metallic states. They possess a mean free path of up to a few hundred nanometers in the absence of a magnet field. The application of perpendicular magnetic field suppresses backscattering significantly and enables a 400-nanometer-long junction to exhibit conductance close to the ballistic limit of 4 $e^2/h$ at 8 Tesla. Our experiment paves the path to the realization of gate-controlled ballistic valley transport and the development of valleytronic applications in atomically thin materials.

Quantum Blockade and Loop Currents in Graphene with Topological Defects

Quantum blockade and loop current induced by a single lattice defect in graphene nanoribbons

Current Partition and Conducting Topological Networks in Twisted Graphene Bilayer

Topological Phases, Local Magnetic Moments, and Spin Polarization Triggered by C558-Line Defects in Graphene

Spontaneous Edge-Defect Formation And Defect-Induced Conductance Suppression In Graphene Nanoribbons

Edge States, Magnetisation and Topological Domain Walls in Graphene

Topological phases, local magnetic moments, and spin polarization triggered by C 558 -line defects in armchair graphene nanoribbons

Theory Of Electronic Properties And Quantum Spin Blockade In A Gated Linear Triple Quantum Dot With One Electron Spin Each

Physical Mechanism of Transport Blocking in Metallic Zigzag Carbon Nanotubes

Phase-Coherent Transport in Graphene Quantum Billiards

Quantized Landau-level crossing checkerboard in large-angle twisted graphene

Edge Disorder in Bottom-Up Zigzag Graphene Nanoribbons: Implications for Magnetism and Quantum Electronic Transport

Gapped Topological Kink States and Topological Corner States in Graphene.

Interface Edge States and Quantum Hall Effect in Graphene under A Modulated Magnetic Field

Breakdown of topological protection due to nonmagnetic edge disorder in two-dimensional materials in the quantum spin Hall phase

Imaging work and dissipation in the quantum Hall state in graphene

Breakdown of topological protection due to non-magnetic edge disorder in two-dimensional materials in the Quantum Spin Hall phase

Chiral symmetry breaking and topological charge of zigzag graphene nanoribbons

Gate-controlled topological conducting channels in bilayer graphene

Metallic Network of Topological Domain Walls

Quantum Transport Through a Graphene Nanoribbon-Superconductor Junction.