Abstract:The processing of N-polar GaN (0001 ¯) samples has been studied, motivated by applications in which extensive back side thinning of freestanding GaN (FS-GaN) substrates is required. Experiments were conducted on FS-GaN from two commercial sources, in addition to epitaxial GaN with the N-face exposed by a laser lift-off process. The different types of samples produced equivalent results. Surface morphologies were examined over relatively large areas, using scanning electron microscopy and stylus profiling. The main focus of this study was on inductively coupled plasma (ICP) etch processes, employing Cl2∕Ar or Cl2∕BCl3Ar gas mixtures. Application of a standard etch recipe, optimized for feature etching of Ga-polar GaN (0001) surfaces, caused severe roughening of N-polar samples and confirmed the necessity for specific optimization of etch conditions for N-face material. A series of recipes with a reduced physical (sputter-based) contribution to etching allowed average surface roughness values to be consistently reduced to below 3nm. Maximum N-face etch rates of 370–390nm∕min have been obtained in recipes examined to date. These are typically faster than etch rates obtained on Ga-face samples under the same conditions and adequate for the process flows of interest. Mechanistic aspects of the ICP etch process and possible factors contributing to residual surface roughness are discussed. This study also included work on chemomechanical polishing (CMP). The optimized CMP process had stock removal rates of ∼500nm∕h on the GaN N face. This was much slower than the ICP etching but showed the important capability of recovering smooth surfaces on samples roughened in previous processing. In one example, a surface roughened by nonoptimized ICP etching was smoothed to give an average surface roughness of ∼2nm.

Electrochemical Lift-off of GaN Films for GaN-on-GaN Technology

Electrochemical liftoff of freestanding GaN by a thick highly conductive sacrificial layer grown by HVPE*

Study of the Laser Lift-off Technology of GaN Films from Sapphire Substrates

In-situ Investigation into the Atomic-Scale Removal Behavior of Gallium Nitride

Preparation of large area freestanding GaN by laser lift-off technology

Spalling induced van der Waals lift-off and transfer of 4-in. GaN epitaxial films

Demonstration of Thin-Film GaN Schottky Diodes Fabricated with Epitaxial Lift-off

Detaching (In,Ga)N Nanowire Films For Devices Requiring High Flexibility And Transmittance

Investigation of Characteristics of Laterally Overgrown GaN on Striped Sapphire Substrates Patterned by Wet Chemical Etching

Preparation of GaN-based cross-sectional TEM specimens by laser lift-off.

Noninvasive Lift-off Technology for Integration of GaN HEMTs with Diamond

Remote Epitaxy and Exfoliation of GaN Via Graphene

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Investigation of Dislocations and Defects in Epitaxial Lateral Overgrown GaN by Photoelectrochemical Wet Etching

Thinning of N-face GaN (0001 ¯) Samples by Inductively Coupled Plasma Etching and Chemomechanical Polishing

Fabrication of GaN-based MEMS Structures Using Dry-Etch Technique

Laser slicing: a thin film lift-off method for GaN-on-GaN technology

Lateral Epitaxial Overgrowth of GaN Films on Patterned Sapphire Substrates Fabricated by Wet Chemical Etching

Interfacial Reactions and Smooth Etching Strategy of N-Type Gallium Nitride Photoanodes

Realization of Wafer-Scale Single-Crystalline GaN Film on CMOS-compatible Si(100) Substrate by Ion-Cutting Technique

Surface Roughness-Controlled Foam-Like GaN Fabricated by the Change H2O Concentration in Ionic Liquid Etchant Solution Via Photoelectrochemical Etching