Abstract:Amorphous oxide semiconductors are receiving significant attention due to their relevance for large area electronics. Their disordered microscopic structure causes the formation of band tails in the density of states (DOS) that strongly affect charge transport properties. Bandtail properties are crucial to understand for optimizing thin film device performance. Among the available techniques to measure the DOS, KPFM is exceptional as it enables precise local electronic investigations combined with microscopic imaging. However, a model to interpret KPFM spectroscopy data on amorphous semiconductors of finite thickness is lacking. To address this issue, we provide an analytical solution to the Poisson's equation for a metal-insulator-semiconductor (MIS) junction interacting with the AFM tip. The solution enables us to fit experimental data for semiconductors with finite thickness and obtain the DOS parameters, such as band tail width (E_t), doping density (N_D), and flat band potential. To demonstrate our method, we perform KPFM experiments on Indium-Gallium-Zinc Oxide (IGZO) thin film transistors (IGZO-TFTs). DOS parameters compare well to values obtained with photocurrent spectroscopy. We demonstrate the potentials of the developed method by investigating the impact of ionizing radiation on DOS parameters and TFT performance. Our results provide clear evidence that the observed shift in threshold voltage is caused by static charge in the gate dielectric leading to a shift in flat band potential. Band-tails and doping density are not affected by the radiation. The developed methodology can be easily translated to different semiconductor materials and paves the way towards quantitative microscopic mapping of local DOS parameters in thin film devices.

Optical Characterizations of Low-k Materials Using Forouhi-Bloomer Dispersion Equations

Determination of the optical constants of polymer light-emitting diode films from single reflection measurements

A New Method for Determination of the Optical Constants and Thickness of Thin Film

Group Delay Dispersion Measurement of a Dispersive Mirror by Spectral Interferometry: Comparison of Different Signal Processing Algorithms.

Measurement of the Group Refractive Index of Bulk Material Using White-Light Spectral Interferometry

Near Common-Path Optical Fiber Interferometer for Potentially Fast On-Line Microscale-Nanoscale Surface Measurement

The Research of a Method to Obtain the Optical Parameters of Semiconductor Films

A PRECISE AND SIMPLE METHOD, THE RELATIVE TRANSMISSION FRINGE DEPTH METHOD, OF DETERMINING THE OPTICAL-CONSTANTS AND THICKNESS OF THIN SEMITRANSPARENT FILMS

Application of Spectrophotometry in the Process Parameters Determination of Compound Semiconductor Film

A General Characterizing Method for Optical Filter Based on Low Coherence Measurement

Ultra-precise determination of thicknesses and refractive indices of optically thick dispersive materials by dual-comb spectroscopy

Dynamic ellipsometry measurement based on a simplified phase-stable dual-comb system.

Determination of the Optical Constants of Solar-Control Amorphous Silicon Thin Films on Float Glass

Permittivity Acquisition Of Plasmonic Materials At Epsilon Near Zero Wavelengths

Evaluation of a New Advanced Low-k Material

Computational Kerr-Ellipsometry: Quantifying Broadband Optical Nonreciprocity of Magneto-Optic Materials

Noncontact dielectric constant metrology of low-k interconnect films using a near-field scanned microwave probe

Accurate determination of band tail properties in amorphous semiconductor thin film with Kelvin Probe Force Microscopy

Development and characterization of a dispersion-encoded method for low-coherence interferometry

Dispersion Measurement with Optical Computing Optical Coherence Tomography

A Review of Thin-film Thickness Measurements using Optical Methods