Abstract:The continued scaling-down of nanoscale semiconductor devices has made it very challenging to obtain analytic surface potential solutions from complex equations in physics, which is the fundamental purpose of the MOSFET compact model. In this work, we proposed a general framework to automatically derive analytical solutions for surface potential in MOSFET, by leveraging the universal approximation power of deep neural networks. Our framework incorporated a physical-relation-neural-network (PRNN) to learn side-by-side from a general-purpose numerical simulator in handling complex equations of mathematical physics, and then instilled the "knowledge'' from the simulation data into the neural network, so as to generate an accurate closed-form mapping between device parameters and surface potential. Inherently, the surface potential was able to reflect the numerical solution of a two-dimensional (2D) Poisson equation, surpassing the limits of traditional 1D Poisson equation solutions, thus better illustrating the physical characteristics of scaling devices. We obtained promising results in inferring the analytic surface potential of MOSFET, and in applying the derived potential function to the building of 130 nm MOSFET compact models and circuit simulation. Such an efficient framework with accurate prediction of device performances demonstrates its potential in device optimization and circuit design.

An Accurate Relationship for Determining the Key Parameters of MOSFETs by Proportional Difference Operator Method

Characterization Method for Proportional Difference Characteristic of MOSFET Devices

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Determination of threshold voltage and mobility of MOSFET by proportional difference operator

Proportional Difference Method for Determination of the Threshold Voltage and the Effect Inversion Carrier Mobility of an MOSFET

New Method for Extraction of MOSFET Parameters

Linear Cofactor Difference Extrema of Mosfet'S Drain Current and Their Application in Parameter Extraction

Linear Cofactor Difference Extrema of MOSFET's Drain–Current and Application to Parameter Extraction

Modeling and Analysis for MOS Capacitance of TSV Considering Temperature Dependence

A rigorous analytical model for short-channel junctionless double-gate MOSFETs

Normalized mutual integral difference operator: A novel experimental method for extracting threshold voltage of MOSFETs

A Physics-Based Analytic Solution to the MOSFET Surface Potential from Accumulation to Strong-Inversion Region

Threshold Voltage Of Mosfet Devices Extracted By Normalized Mutual Integral Difference Operator

Refined Electrical Modelling of Power MOSFETs Based on Physical Information

RETRACTED: Normalized Mutual Integral Difference Operator: a Novel Experimental Method for Extracting Threshold Voltage of MOSFETs

Efficient Statistical Parameter Extraction for Modeling MOSFET Mismatch

Optimization of Specific On-Resistance of Balanced Symmetric Superjunction MOSFETs Based on a Better Approximation of Ionization Integral

An Accurate Parameter Extraction Method for RF LDMOSFET Small-Signal Model

An efficient model algorithm for two-dimensional field-effect transistors

MOSFET Physics-Based Compact Model Mass-Produced: An Artificial Neural Network Approach

Analytic MOSFET surface potential model with inclusion of poly-gate accumulation, depletion, and inversion effects