Abstract:In this paper, a rigorous surface potential-based core undoped symmetric Double-Gate Metal-Oxide-Semiconductor Field Effect Transistors (DG MOSFETs) model is derived by solving the Poisson's equation to obtain the relationship between the surface potential and applied voltage in the channel region in a self-consistent way. The drain current is then obtained from the Pao-Sah's double integral. The model consists of one set of the surface potential equations and the analytical drain current can be evaluated from the surface potentials at the source and drain ends. It is demonstrated that the model is valid for all operation regions of the DG MOSFETs and without any simplification (e.g., by using the charge sheet assumption) or auxiliary fitting functions. The model has been verified by extensive comparisons with 2-D numerical simulation under different operation conditions with different geometry. The consistency between the model calculation and numerical simulation demonstrated the accuracy of the model.

Linear Cofactor Difference Extrema of MOSFET's Drain–Current and Application to Parameter Extraction

Linear Cofactor Difference Extrema of Mosfet'S Drain Current and Their Application in Parameter Extraction

Linear Cofactor Difference Method of MOSFET Subthreshold Characteristics for Extracting Interface Traps Induced by Gate Oxide Stress Test

Logarithm Cofactor Difference Extrema Method of MOSFET's Post-Breakdown Current and Application to Parameter Extraction

Logarithm cofactor difference extrema of MOS devices' post-breakdown current and application to parameter extraction

New Method for Extraction of MOSFET Parameters

Normalized mutual integral difference operator: A novel experimental method for extracting threshold voltage of MOSFETs

Threshold Voltage Of Mosfet Devices Extracted By Normalized Mutual Integral Difference Operator

RETRACTED: Normalized Mutual Integral Difference Operator: a Novel Experimental Method for Extracting Threshold Voltage of MOSFETs

Study on Extraction of Stress-Induced Interface Traps in MOSFETs by Linear Cofactor Differernce Subthreshold Voltage Peak Technique

Normalized mutual integral difference method to extract threshold voltage of MOSFETs

Forward Gated-Diode Method For Parameter Extraction Of Mosfets

An Accurate Relationship for Determining the Key Parameters of MOSFETs by Proportional Difference Operator Method

Comparison and insight into long-channel MOSFET drain current models

Proportional difference operator method and its application to studying the saturation characteristics of MOSFETs

An Accurate Parameter Extraction Method for RF LDMOSFET Small-Signal Model

Parameter extraction of nano-scale MOSFET by a forward gated-diode method

Analytical Drain Current Model for Long-Channel Gate-All-around Negative Capacitance Transistors with a Metal–ferroelectric–insulator–semiconductor Structure

The Μeq Fitting for Mixed Current Model of MOSFETs Considering Horizontal Electric Field

Analytical Current Model for Long-Channel Junctionless Double-Gate Mosfets

A Rigorous and Concise Surface Potential-Based Core Model for the Undoped Symmetric Double-Gate Metal-Oxide-Semiconductor Field Effect Transistors