Abstract:The threshold voltage of MOSFETs to be extracted by a novel experimental method named the normalized mutual integral difference operator has been investigated in this paper. The basic principle of this method is to use the extreme spectral characteristics of the normalized mutual integral difference result of the MOSFET transfer characteristics to find the threshold voltage. Application of this method has also been demonstrated numerically in extracting the threshold voltage of MOS devices with the different effective channel length and parasitic series resistance. The results show this method is sensitive to the channel length variation while insensitive to the parasitic resistance component. The extracted results on the threshold voltage of MOSFET devices have been compared with those obtained by the second derivative method and the agreements have been found, showing the advantage of the method presented here.

Linear Cofactor Difference Extrema of Mosfet'S Drain Current and Their Application in Parameter Extraction

Linear Cofactor Difference Extrema of MOSFET's Drain–Current and Application to Parameter Extraction

Linear Cofactor Difference Method of MOSFET Subthreshold Characteristics for Extracting Interface Traps Induced by Gate Oxide Stress Test

Logarithm Cofactor Difference Extrema Method of MOSFET's Post-Breakdown Current and Application to Parameter Extraction

Logarithm cofactor difference extrema of MOS devices' post-breakdown current and application to parameter extraction

New Method for Extraction of MOSFET Parameters

Normalized mutual integral difference operator: A novel experimental method for extracting threshold voltage of MOSFETs

Threshold Voltage Of Mosfet Devices Extracted By Normalized Mutual Integral Difference Operator

Study on Extraction of Stress-Induced Interface Traps in MOSFETs by Linear Cofactor Differernce Subthreshold Voltage Peak Technique

RETRACTED: Normalized Mutual Integral Difference Operator: a Novel Experimental Method for Extracting Threshold Voltage of MOSFETs

Computation of Direct Tunneling gate leakage currents in nano-MOSFETs using ensemble Full Band Monte Carlo with quantum correction

Normalized mutual integral difference method to extract threshold voltage of MOSFETs

Forward Gated-Diode Method For Parameter Extraction Of Mosfets

An Accurate Relationship for Determining the Key Parameters of MOSFETs by Proportional Difference Operator Method

An Accurate Method To Extract And Separate Interface And Gate Oxide Traps By The Mosfet Subthreshold Current

Proportional difference operator method and its application to studying the saturation characteristics of MOSFETs

Retracted: Normalized Mutual Integral Difference Operator: A Novel Experimental Method For Extracting Threshold Voltage Of Mosfets (Retracted Article. See Vol. 41, Pg. 693, 2010)

Parameter extraction of nano-scale MOSFET by a forward gated-diode method

Comparison and insight into long-channel MOSFET drain current models

Proportional Difference Method for Determination of the Threshold Voltage and the Effect Inversion Carrier Mobility of an MOSFET

Analytical Drain Current Model for Long-Channel Gate-All-around Negative Capacitance Transistors with a Metal–ferroelectric–insulator–semiconductor Structure