Asymmetric Polarization of Defect Dipoles Inbi4ti3o

Anquan Jiang,Linjie Zhang
DOI: https://doi.org/10.1103/physrevb.60.9204
1999-01-01
Abstract:Asymmetric polarization of defect dipoles around phase transitions develops the resistivity hysteretic behavior and imprint failure of ${\mathrm{Bi}}_{4}{\mathrm{Ti}}_{3}{\mathrm{O}}_{12}$ and ${\mathrm{Bi}}_{2}{\mathrm{Ti}}_{4}{\mathrm{O}}_{11}$ ceramics under various electric fields. The polarization was determined qualitatively by $P\ensuremath{-}E$ hysteresis loop measurements along with the detection of current transient with time. A reduction in defect-dipole polarization occurs at high-field strength due to the defect-dipole decomposition and/or oxygen vacancy migration.
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