Abstract:III-nitrides based high electron-mobility transistors (HEMTs) are well-known excellent candidates for high-power, radio-frequency (rf) and high-temperature applications. However, HEMTs have to face the essential issues of high gate leakage current and drain current collapse (gate-lag), which inevitably limits the device performances and reliability. Here, we fabricate an optimized AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT), by using HfZrOx (HZO) as a gate dielectric, that can improve the interfacial and transport properties. Compared to the conventional high permittivity (high-kappa) gate dielectric HfO2 which has attracted wide attention in recent years, the concentrations of interface traps and the inside fixed oxide defects are obviously reduced by using high quality HZO layer. Through the dielectric engineering of HZO, the MOS-HEMT with HZO dielectric shows an enhanced DC output performance with an increase of 54% at the optimal working condition, which is indeed much higher than that of the HfO2 MOS-HEMT (40%). And the HZO MOS-HEMT exhibits a higher I-on/I-off ratio of 10(6), an excellent subthreshold swing (SS) of 85 mV/decade, and a higher voltage swing (GVS). The gate leakage is reduced by nearly 8 orders of magnitude compared to the conventional unpassivated HEMTs (conv. HEMT) at the gate voltage of -5 V. These results are mainly caused by the replacement of the low-height Schottky barrier (SB) and the reduction of interface traps density. In order to further investigate the interfacial and electric properties of HZO MOS-HEMT, the dynamic gate/drain voltage and high-frequency capacitance-voltage (C-V) measurements are both applied. Remarkably, no measurable current collapse and C-V hysteresis are clearly observed, showing the enhanced interfacial and electric performances of the MOS-HEMT with dielectric engineering of HZO.

InAlN/GaN MOSHEMTs with High Drain Current of 2.3 A/mm High On/off Ratio of 10<sup>12</sup> and Low SS of 64 Mv/dec Enabled by Atomic-Layer-epitaxial MgCaO As Gate Dielectric

Current-collapse Suppression and Leakage-Current Decrease in AlGaN/GaN HEMT by Sputter-Tan Gate-Dielectric Layer

Low Leakage Current and High-Cutoff Frequency AlGaN/GaN MOSHEMT Using Submicrometer-Footprint Thermal Oxidized TiO2/NiO As Gate Dielectric

Enhanced Performances of AlGaN/GaN HEMTs with Dielectric Engineering of HfZrOx

High-Performance HZO/InAlN/GaN MIS-HEMT with fT/fmax of 155/250 GHz

Channel Engineering of Normally-OFF AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High- $\kappa$ Dielectric

Multilayer SiNx passivated Al2O3 gate dielectric featuring a robust interface for ultralong-lifetime AlGaN/GaN HEMT

Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate

High Drain Current Density E-Mode ${\rm Al}_{2}{\rm O}_{3}$/AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit $(4\times 10^{8}~{\rm V}^{2}\Omega^{-1}{\rm cm}^{-2})$

AlGaN/GaN E-mode MOS-HEMT Using Atomic-Layer-Deposited HfLaOx As Gate Dielectric

AlGaN/GaN High Electron Mobility Transistors with a Low Sub-Threshold Swing on Free-Standing GaN Wafer

AlGaN/GaN MISHEMTs with AlN Gate Dielectric Grown by Thermal ALD Technique

Enhanced Device Performance of AlGaN/GaN HEMTs Using Thermal Oxidation of Electron-Beam Deposited Aluminum for Gate Oxide

Simulation study on electrical properties of p-GaN gate normally-off HEMT devices affected by Al mole fraction in AlGaN barrier layer

High-performance normally off p-GaN gate high-electron-mobility transistor with In 0.17 Al 0.83 N barrier layer design

1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current

A high breakdown voltage AlGaN/GaN MOSHEMT using thermal oxidized Al-Ti as the gate insulator

Asymmetric GaN High Electron Mobility Transistors Design with InAlN Barrier at Source Side and AlGaN Barrier at Drain Side

High Breakdown AlGaN/GaN MOSHEMT with Thermal Oxidized Ni/Ti As Gate Insulator

High- ${k}$ HfO 2 -Based AlGaN/GaN MIS-HEMTs with Y 2 O 3 Interfacial Layer for High Gate Controllability and Interface Quality

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator

InAlN/GaN MOSHEMTs with High Drain Current of 2.3 A/mm High On/off Ratio of 10&lt;sup&gt;12&lt;/sup&gt; and Low SS of 64 Mv/dec Enabled by Atomic-Layer-epitaxial MgCaO As Gate Dielectric