Epitaxial Growth, Structure, and Intermixing at Thelaalo3/srtio3interface As the Film …

Liang Qiao,Timothy C. Droubay,Tamás Varga,Mark Bowden,V. Shutthanandan,Zhichao Zhu,Tiffany C. Kaspar,S. A. Chambers
DOI: https://doi.org/10.1103/physrevb.83.085408
IF: 3.7
2011-01-01
Physical Review B
Abstract:${\mathrm{LaAlO}}_{3}$ epitaxial films with La:Al cation ratios ranging from 0.9 to 1.2 were grown on ${\mathrm{TiO}}_{2}$-terminated ${\mathrm{SrTiO}}_{3}$ (001) substrates by off-axis pulsed laser deposition. Although all films are epitaxial, rocking curve measurements show that the crystallographic quality degrades with increasing La:Al ratio. Films with La:Al ratios of 0.9, 1.0, and 1.1 were coherently strained to the substrate. However, the out-of-plane lattice parameter increases over this range, revealing a decrease in film tetragonality. Although all film surfaces exhibit hydroxylation, the extent of hydroxylation is greater for the La-rich films. Rutherford backscattering spectrometry reveals that La from the film diffuses deeply into the ${\mathrm{SrTiO}}_{3}$ substrate and secondary-ion-mass spectroscopy shows unambiguous Sr outdiffusion into the films.
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