Abstract:Oxide growth with semiconductor-like accuracy allows the fabrication of atomically precise thin films and interfaces displaying a wide range of phases and functionalities that are absent in the corresponding oxide bulk materials. Among the other properties it was found that a two-dimensional electronic gas is formed under some circumstances at the LaAlO3/SrTiO3(0 0 1) interface separating two typical insulating perovskite crystals. The origin of this conducting state has been discussed at length, since different doping mechanisms can act in these material systems. Many experimental results point to the so-called polar catastrophe scenario as the principal mechanism driving the formation of the two-dimensional electronic gas. According to this mechanism, the existence of an interfacial polar discontinuity is the key ingredient to drive an electronic reconstruction at the LaAlO3/SrTiO3(0 0 1) interface and the consequent formation of a two-dimensional electron gas. This simple picture has been often questioned by the existence of material systems whose interface are predicted being non-polar according to the simplistic 'ionic' limit but that display an electrical behavior analogous to that of LaAlO3/SrTiO3(0 0 1) interfaces. This is the case of the LaAlO3/SrTiO3(1 1 0), i.e., a LaAlO3/SrTiO3 interface with a different in-plane orientation. It is evident that to solve such kind of controversies a detailed investigation of the polar or non-polar state of these interfaces is needed, although this is not simple for the lack of experimental tools that are specifically sensitive to interfacial polarity. Here we apply Optical Second Harmonic Generation to investigate LaAlO3/SrTiO3 interfaces with different in-plane orientations to bridge this gap. By comparing our results with recent theoretical findings, we will arrive to the conclusion that the real LaAlO3/SrTiO3(1 1 0) interface is strongly polar.

Chemical Strain-Dependent Two-Dimensional Transport at Ralo3/Srtio3 Interfaces (R = La, Nd, Sm, and Gd)

Tailoring a two-dimensional electron gas at the LaAlO3/SrTiO3 (001) interface by epitaxial strain

Strong electronic correlation and strain effects at the interfaces between polar and nonpolar complex oxides

Epitaxial Strain-Induced Chemical Ordering in La0.5Sr0.5CoO3−δ Films on SrTiO3

Strain-induced anisotropic transport properties of LaBaCo₂O₅.₅+δ thin films on NdGaO₃ substrates.

Strain Effects on Conductivity and Charge Transport in La-doped BaTiO3 Thin Films

Biaxial Strain-Induced Transport Property Changes in Atomically Tailoredsrtio3-Based Systems

Effect of Polar Distortion on Electronic Structures of (001) LaGaO3/SrTiO3 Interface

Tunability of the two-dimensional electron gas at the LaAlO3/SrTiO3 interface by strain-induced ferroelectricity

Anomalous change of electronic properties for uniaxial-strained LaAlO3/SrTiO3 (001) heterostructure

Strain-induced tuning of the electronic Coulomb interaction in 3d transition metal oxide perovskites

Modulating the Electronic and Optical Properties for SrTiO3/LaAlO3 Bilayers Treated As the 2D Materials by Biaxial Strains

Chemical Intermixing at Oxide Heterointerfaces with Polar Discontinuity

Chemistry and structure of homoepitaxial SrTiO$_3$ films and their influence on oxide-heterostructure interfaces

Epitaxial Growth, Structure, and Intermixing at Thelaalo3/srtio3interface As the Film …

Strain Engineering of Magnetic and Orbital Order in Perovskite LuMnO3 Epitaxial Films

Tunable Electronic Transport Properties Of Dysco3/Srtio3 Polar Heterointerface

Strain-Mediated Inverse Photoresistivity in SrRuO3/La0.7Sr0.3MnO3 Superlattices

Optical second harmonic generation from LaAlO3/SrTiO3 interfaces with different in-plane anisotropies

Two-Dimensional Electron Gases at LaAlO3/SrTiO3 Nanostructured Heterointerfaces with a Buffering Layer for Oxide-Based Electronics

Instability, intermixing and electronic structure at the epitaxial LaAlO3/SrTiO3(001) heterojunction