Abstract:The contribution of Coulomb elastic scattering of protons and heavy ions to single-event upsets (SEUs) is concerned in nanometric electronic devices. In this work, Monte Carlo Geant4 simulations are used to investigate the impact of Coulomb elastic scattering of protons and iron ions on SEUs in a 22 nm silicon-on-insulator (SOI) static random access memory (SRAM). The SEU cross section and multiple-bit upset (MBU) proportion versus incident energy curves for protons and iron ions have been estimated for the SRAM thanks to numerical Geant4 simulations. The ionization processes of ionizing radiation causing SEUs are sorted into three parts: direct ionization from primary particles, indirect ionization from Coulomb recoil atoms, and indirect ionization from secondary particles produced by nuclear reactions. Their relative contributions to SEUs and MBUs are analyzed. The contribution of Coulomb elastic scattering to SEUs cannot be neglected in the energy range from 2 to 6 MeV and below 40 MeV for protons and iron ions, respectively. In the case of iron ion incidence, it is observed that the total SEU cross section decreases in the energy range from 16 to 40 MeV. It can be attributed to the decrease in the Coulomb elastic scattering cross section of iron ions. The probability distributions of energy deposited in the sensitive volumes (SVs) are calculated for iron ions with different energies. The sources of energy deposited in an SV can be sorted into three cases. The three parts of the probability distribution of deposited energy corresponding to these three cases change with increasing incident energy, which can well explain the observed SEU response.

Single event upset sensitivity of medium-energy proton in Xilinx 16nm MPSoC

Impact of Coulomb elastic scattering of protons and iron ions on single-event upsets in a 22 nm SOI SRAM

Investigation of the Impact of Angles and Rotation of Low Energy Protons in SRAM Cells Down to 16nm

Single-Event Upsets in SRAMs with Scaling Technology Nodes Induced by Terrestrial, Nuclear Reactor, and Monoenergetic Neutrons

Heavy Ion Induced SEU Sensitivity Evaluation of 3D Integrated SRAMs

Single Event Upset on Static Random Access Memory Devices Due to Spallation, Reactor, and Monoenergetic Neutrons

SEU in SRAMs Due to 2.5 MeV, 14 MeV and Reactor Neutrons

SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA

Impact of Irradiation Side on Muon-Induced Single Event Upsets in 65-nm Bulk SRAMs

Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation

X-Ray and Proton Radiation Effects on 40 Nm CMOS Physically Unclonable Function Devices

Characterization of Single Event Upsets of Nanoscale FDSOI Circuits Based on the Simulation and Irradiation Results

Experimental Study of the Impact of Temperature on Atmospheric Neutron-Induced Single Event Upsets in 28 nm Embedded SRAM of SiP

SEU Effects Induced by Reactor Spallation and Accelerator Neutron Sources in Nano-SRAMs

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment

SEU ground and flight data in static random access memories

Measurement of Single Event Effect cross section induced by monoenergetic protons on a 130 nm ASIC

Experimental Studies of Single-Event Effects Induced by Heavy Ions

Testing of a new type SEU-tolerant SRAM

Microbeam Heavy-Ion Single-Event Effect on Xilinx 28-nm System on Chip

Electron-Induced Single-Event Effect in 28 nm SRAM-Based FPGA