Abstract:As an idealized light source, semiconductor nanowire (NW) lasers have been extensively studied due to its potential applications in many fields such as optoelectronics, nanophononics, optical communication, signal processing, and displays. In this letter, we proposed a novel approach to realize a single-mode nanolaser by forming an Fabry-Perot whispering gallery mode (FP-WGM) hybrid nanocavity between two cross-contact CdS NWs, i.e. x and y-NW. In our method, x-NW supports the regular FP oscillation in the axis direction while the cross section of y-NW provides a ultrasmall WGM nanocavity with a higher Q-factor and mode election which confirms the specific single mode can be excited. Experimentally, single-mode lasing emission centered at 517 nm was obtained with full width at half maximum of 0.08 nm and lasing threshold of similar to 50 kW cm-2. The suggested designing skills projected a general strategy for lasing mode regulation and single-mode realization. The single-mode low-threshold lasing strategy in coupled NWs may open a new avenue for practical applications of NW lasers and further trigger other photonic devices at a visible range.

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990 Nm High-Power High-Beam-Quality DFB Laser with Narrow Linewidth Controlled by Gain-Coupled Effect

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Single-Mode Narrow Linewidth Three-Section Coupled-Cavity Laser With Deeply Etched Trenches

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A 795 Nm Gain Coupled Distributed Feedback Semiconductor Laser Based on Tilted Waveguides

High-Power Mid-Infrared Quantum Cascade Laser with Large Emitter Width

Robust Slab-Coupled Buried-Rib Semiconductor Laser with High Fibre Coupling Efficiency

Double Half-Wave-Coupled Rectangular Ring-Fp Laser With 35x100ghz Wavelength Tuning

High-power Single-Longitudinal-mode Double-Tapered Gain-Coupled Distributed Feedback Semiconductor Lasers Based on Periodic Anodes Defined by I-Line Lithography

996 Nm High-Power Single-Longitudinal-mode Tapered Gain-Coupled Distributed Feedback Laser Diodes.

Optical and RIN Spectrum Improvements in Necked Waveguide High-Power DFB Laser Diode

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1045 nm purely gain coupled semiconductor laser based on periodic electric injection