Abstract:The combination of grating-based frequency-selective optical feedback mechanisms, such as distributed feedback (DFB) or distributed Bragg reflector (DBR) structures, with quantum dot (QD) gain materials is a main approach towards ultra-high-performance semiconductor lasers for many key novel applications, either as stand-alone sources or as on-chip sources in photonic integrated circuits. However, the fabrication of conventional buried Bragg grating structures on GaAs, GaAs/Si, GaSb and other material platforms have been met with major material regrowth difficulties. We report a novel and universal approach of introducing laterally coupled dielectric Bragg gratings to semiconductor lasers that allows highly controllable, reliable and strong coupling between the grating and the optical mode. We implement such a grating structure in a low-loss amorphous silicon material alongside GaAs lasers with InAs/GaAs QD gain layers. The resulting DFB laser arrays emit at pre-designed 0.8 THz LWDM frequency intervals in the 1300 nm band with record performance parameters, including side mode suppression ratios as high as 52.7 dB, continuous-wave output power of 27.7 mW (room-temperature) and 10 mW (at 70°C), and ultra-low relative intensity noise (RIN) of < -165 dB/Hz (2.5-25 GHz). The devices are also capable of operating isolator-free under very high external reflection levels of up to -12.3 dB whilst maintaining the high spectral and ultra-low RIN qualities. These results validate the novel laterally coupled dielectric grating as a technologically superior and potentially cost-effective approach for fabricating DFB and DBR lasers free of their semiconductor material constraints, thus universally applicable across different material platforms and wavelength bands.

High-performance PCW-DFB laser diodes using offset quantum well epitaxial structures

Optical and RIN Spectrum Improvements in Necked Waveguide High-Power DFB Laser Diode

High-power 940 nm DFB laser diode with large optical cavity

Q-modulated Distributed Feedback Laser with 28ghz 3db Bandwidth

Study of Gain-Coupled Distributed Feedback Laser Based on High Order Surface Gain-Coupled Gratings

Single-electrode-controlled 14×200ghz Digitally Wavelength Switchable Half-Wave Coupled Rectangular Ring-Fp Semiconductor Laser

Analysis and Design of Combined Distributed-Feedback/fabry-perot Structures for Surface-Emitting Semiconductor Lasers

990 Nm High-Power High-Beam-Quality DFB Laser with Narrow Linewidth Controlled by Gain-Coupled Effect

Double Half-Wave-Coupled Rectangular Ring-Fp Laser With 35x100ghz Wavelength Tuning

High-power distributed feedback laser diode arrays with narrow spectral width over a wide temperature range

Offset Quantum-Well Method for Tunable Distributed Bragg Reflector Lasers and Electro-Absorption Modulated Distributed Feedback Lasers

High efficiency diode-pumped Pr:LiLuF4 visible lasers in femtosecond-laser-written waveguides

Travelling wave analysis on high-speed performance of Q-modulated distributed feedback laser.

Cost-Effective Partially Corrugated Waveguide Laser Diodes for Use in Optical Access Networks

1.3 Μm 10-Wavelength Laterally Coupled Distributed Feedback Laser Array with High-Duty-Ratio Gratings

High performance distributed feedback quantum dot lasers with laterally coupled dielectric grating

High-performance 1.06-Μm InGaAs/GaAs Double-Quantum-well Semiconductor Lasers with Asymmetric Heterostructure Layers

High Performance 2150 Nm-Emitting InAs/InGaAs/InP Quantum Well Lasers Grown by Metalorganic Vapor Phase Epitaxy

Gain-Coupled High-Power Low-RIN 1.55 Μm Single-Mode DFB Lasers with Wide Ridge Waveguide

Gain-coupled 770 Nm DFB Semiconductor Laser Based on Surface Grating

High efficiency diode-pumped Pr:LiLuF_4 visible lasers in femtosecond-laser-written waveguides