Abstract:Semiconductor laser is one of the most critical components in the field of modern communication. Research and development of single-mode semiconductor laser with high stability, high power, high beam quality and narrow line width is an important research area in this field. In this paper, A novel edge-emitting semiconductor laser diode structure is proposed. In the structure an active multimode interference waveguide structure serves as a main gain region. To modulate the longitudinal mode of the laser, a gain-coupled distributed feedback(DFB) laser based on high order surface gain coupled grating is introduced into the structure as well. The novel structure is then fabricated and compared with an conventional DFB laser. The experimental results show that higher slope efficiency and output power are achieved with the proposed structure than those with the conventional distributed feedback semiconductor lasers. The novel structure is also compared with conventional MMI laser with only Fabry-Parot(FP) cavity. The result shows that the proposed structure has higher beam quality and better stability than the FP cavity multimode interference waveguide lasers. To enhance the gain contrast in the quantum wells without introducing the effective index-coupled effect, the groove length and depth are well designed. Our device provides a single longitudinal mode with the maximum CW output power up to 53.8 mW/facet at 981.21 nm and 400 mA without facet coating, 3 dB linewidth < 13.6 pm, and SMSR > 32 dB. Optical bistable characteristic is observed with a threshold current difference. Meanwhile, by using high-order distribution feedback grating formed by shallow surface etching in the process of chip design and fabrication, the proposed structure of laser diode can realize regrowth freely and only micronscale precision i-line lithography is required. Such a structure with simple fabrication process and low manufacturing cost has great potential for commercial mass production.

990 Nm High-Power High-Beam-Quality DFB Laser with Narrow Linewidth Controlled by Gain-Coupled Effect

996 Nm High-Power Single-Longitudinal-mode Tapered Gain-Coupled Distributed Feedback Laser Diodes.

High-power Single-Longitudinal-mode Double-Tapered Gain-Coupled Distributed Feedback Semiconductor Lasers Based on Periodic Anodes Defined by I-Line Lithography

Hybrid Integrated Narrow-Linewidth Semiconductor Lasers

1045 nm purely gain coupled semiconductor laser based on periodic electric injection

Narrow-Strip 670 Nm Gain-Coupled Distributed Feedback Laser Based on Periodic Anodes Fabricated by I-Line Lithography

Gain-Coupled High-Power Low-RIN 1.55 Μm Single-Mode DFB Lasers with Wide Ridge Waveguide

Optical and RIN Spectrum Improvements in Necked Waveguide High-Power DFB Laser Diode

A 795 Nm Gain Coupled Distributed Feedback Semiconductor Laser Based on Tilted Waveguides

Gain-coupled 770 Nm DFB Semiconductor Laser Based on Surface Grating

Single-Mode Narrow Linewidth Three-Section Coupled-Cavity Laser With Deeply Etched Trenches

980Nm InGaAs/AlGaAs Quantum Well High Power Semiconductor Laser with Narrow Vertical Divergence Angle

Narrow-Strip Single-Longitudinal-Mode Laser Based on Periodic Anodes Defined by i-Line Lithography

Two-Segment Gain-Coupled Distributed Feedback Laser

Fundamental spatial mode high power 808nm double trench wide ridge waveguide laser

High-power 940 nm DFB laser diode with large optical cavity

A 5 kW Nearly-Single-Mode Monolithic Fiber Laser Emitting at ~1050 nm Employing Asymmetric Bi-Tapered Ytterbium-Doped Fiber

1030 nm high power polarization maintained fiber laser with narrow linewidth and near diffraction limited beam quality

Design of a Multimode Interference Waveguide Semiconductor Laser Combining Gain Coupled Distributed Feedback Grating

High-power operation and lateral divergence angle reduction of broad-area laser diodes at 976 nm

Kw-Level 1030 Nm Polarization-Maintained Fiber Laser with Narrow Linewidth and Near-Diffraction-limited Beam Quality.