Abstract:The proposed radio‐frequency receiver is a low‐IF receiver architecture, not a zero‐IF Rx, with the IF frequency being twice the channel bandwidth, that is, the intermediate frequency in the RF receiver equals 200 MHz. The radio‐frequency receiver consists of a low‐noise driver stage (RF stage) and an in‐phase/quadrature of phase (I/Q) demodulator. The low‐noise driver stage is designed using a complementary current‐reuse common‐gate configuration with shunt feedback to achieve wideband RF input matching with ultra‐low power dissipation, enhancing linearity compared to the conventional configuration. Summary This paper presents a battery‐free ultra‐low‐power (ULP), highly integrated, and wide‐bandwidth low‐IF radio‐frequency (RF) receiver designed for millimeter‐wave (mm‐Wave) applications, utilizing 130‐nm CMOS technology. The suggested RF receiver is suitable for K‐band (n258) at 26 GHz, Ka‐band (n261 and n257) at 28 GHz, and the LMDS band at 28 GHz in fifth‐generation applications. The proposed radio receiver consists of a low‐noise driver stage implemented using a complementary current‐reuse common gate with an active shunt feedback configuration and an in‐phase/quadrature‐phase (I/Q) demodulator. The proposed RF receiver employs transformer coupling to isolate the DC path between the transconductance stage (RF stage) and the switching stage (IF stage). The driver stage expands the RF input impedance while maintaining acceptable linearity and gain with ultra‐low DC power dissipation. The DC supplies for the proposed mm‐Wave RF receiver are generated using two novel energy‐harvesting voltage doubler circuits to provide positive and negative voltages. The proposed mm‐Wave radio receiver consumes 0.475 mW from a 1.1 V DC supply and exhibits a power conversion gain (CG) of 6.3 dB, with a 3 dB frequency bandwidth extending from 22 to 32 GHz. The input 1‐dB compression point (P1dB) of the RF receiver is −2.65 dBm, and the input third‐order intercept point (IIP3) is 7.35 dBm. With a sensitivity of −66.5 dBm at a 100 MHz channel bandwidth and a dynamic range of 63.85 dB, the suggested receiver demonstrates notable performance characteristics. The proposed radio receiver boasts an excellent figure of merit (FoM) at 215 dB, surpassing published works by a margin of 8–31 dB. The primary positive supply voltage is derived from a double‐band positive voltage doubler with series resonance feedback and parallel resonance networks, efficiently achieving the desired DC voltage and output current (1.1 V and 450 μA). Meanwhile, the negative gate bias is provided by a negative voltage doubler, ensuring the necessary negative voltage (−0.5 V) without any current conditions.

A 0.9V 1.2GHz-BW 15.8dBm-OIP3 Current Mode Analog Baseband for Broadband Receivers in 12nm FinFET CMOS.

Analysis and Design of a 0.9 V 1 GHz-BW 14.6 Dbm-Oip3 Broadband Receiver with Current-Mode Analog Baseband in 12 Nm FinFET CMOS

A C-Band Four-Channel Receiver with Current-Sharing and Large-Signal Multigated-Transistor Techniques in 65-Nm CMOS

A CMOS 135–150 GHz 0.4 dBm EIRP transmitter with 5.1dB P1dB extension using IF envelope feed-forward gain compensation

A Sub-1-GHz Band High-Dynamic-Range Receiver with Integrated Self-Adaptive Multipart AGC Loops

Design of a Low Power 60ghz OOK Receiver in 65nm CMOS Technology

A Sub-GHz CMOS Low-IF Receiver for Lot Applications

A Low Power Analog Baseband for IoT Applications in 40 Nm CMOS

A 1.8-V, 5-Ma Reconfigurable Analog Baseband Circuit for Low-if Multi-Mode Multi-Band Receivers

Cmos Low-Power Analogue Baseband Circuits for a Non-Coherent Low Data Rate IR-UWB Receiver

An Ultra-Wideband and Low-Power Amplifier Using 0.35-&Amp;#x003bc;m SiGe BiCMOS Technology

A+21.2 Dbm Out-Of-Band Iip3 0.2-3ghz Rf Front-End Using Impedance Translation Technique

A 600 MHz-BW 154.3 Db-Fom Current-Mode Continuous-Time Pipelined ADC in 12 Nm CMOS

A 31mA CMOS wideband BD-II B2&B3 mode receiver with 55dB gain dynamic range

A 0.1–1.2 GHz CMOS Ultra-Broadband Power Amplifier

A Current-Mode RF Transmitter for 6–9 GHz MB-OFDM UWB Application

Battery‐free ultra‐low‐power radio‐frequency receiver for mm‐wave applications using 130‐nm CMOS technology with harvested DC supplies

A Baseband-Noise-Cancelling Mixer-First CMOS Receiver Frontend Attaining 220 MHz IF Bandwidth With Positive-Capacitive-Feedback TIA

A 0.1 Similar To 4ghz Receiver And 0.1 Similar To 6ghz Transmitter With Reconfigurable 10 Similar To 100mhz Signal Bandwidth In 65nm Cmos

A 0.18 Mu M Cmos Ultra-Wideband Low-Noise Amplifier With High Iip3

A 115-325MHz Wideband Analog Baseband with 0.5dB-Step Variable Gain Amplifier and Six-order Reconfigurable Gm-C Lowpass Filter.