Abstract:The crystal growth rate was critical to the quality and production efficiency. The optimization aimed at to achieve higher production efficiency and to ensure the quality. In VGF crystal growth procedure, the crystal growth rate depended on the temperature at control point and the cooling rate. The 6 inch VGF-GaAs crystal grown was studied at rates of 0.9, 1.8, and 3.6 mm·h -1 respectively with the aid of numerical simulation. By comparing the temperature gradient, the interface shape and the thermal stress distribution in the crystals grown at those rates, some results were presented: Increasing crystal growth rate, the axial temperature gradient was increased, and the accretion along radius was also faster. Because of the effect of higher heat conductivity of BN crucible along the wall, the axial temperature gradient decreased quickly at the edge of crystal, also the radial temperature gradients in the crystal grown at different rates became minus after 70 mm along radius. Large amount of heat flux flew out along the crucible wall and lead the crystal growth edge and corner upturned. As the growth rate increasing, the interface shape changed from convex to flatness and concave, 'interface effect' was strengthened, the angle between interface and crucible wall became smaller and the incidence of twin and polycrystalline increased. It was found that the crystal interface with growth rate of 1.8 mm·h -1 was flat, the thermal stress at the center and edge were lower, and the production efficiency was bigger, so the optimized growth rate was determined to be 1.8 mm·h -1.

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Optimization of the growth interface during the growth of ZnTe crystal by the temperature gradient solution growth technique

Numerical Simulation of CdTe Crystal Growth Using the Vertical Gradient Freeze Technique Assisted by Axial Low-Frequency Oscillations of the Melt

Studies on Thermal and Interface Optimization for CdZnTe Crystals by Unseeded Traveling Heater Method

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Optimization of Gap between Crucible and Support during Growth of 6 Inch VGF GaAs Single Crystal by Numerical Simulation

Thermal stress optimization in 6 inch VGF growth of Ge crystal by numerical simulation

The Transport Phenomena During the Growth of ZnTe Crystal by the Temperature Gradient Solution Growth Technique

A Modified Vertical Bridgman Method for Growth of High-Quality Cd1−xZnxTe Crystals

Use of Numerical Modeling for Improved of VGF-growth GaAs Crystals

Growth and Characterization of Cdznte Bulk Crystals Grown by Temperature Gradient Solution Growth

Numerical Modeling of CdZnTe-VBM Crystal Growth

A modified vertical Bridgman method for growth of high-quality Cd<sub>1−x</sub>Zn<sub>x</sub>Te crystals

Process Parameters Optimization for Cd0.9Zn0.1Te Crystal Grown by Traveling Heater Method

Growth Rate Optimization of 6" GaAs Single Crystal Grown by VGF Process

Optimizing the Growth Procedures for Cdse Crystal by Thermal Analysis Techniques

Optimization of thermal field of 150 mm SiC crystal growth by PVT method

Fundamental Study of Crystal/melt Interface Shape Change in Czochralski Crystal Growth

Numerical Simulation of Β-Ga2o3 Single Crystal Growth by Czochralski Method with an Insulation Lid