Thermal stress optimization in 6 inch VGF growth of Ge crystal by numerical simulation

Guoqiang Qiang Ding,Su Xiaoping,Zhang Fengyi,Jianming Li,Deshen Feng

DOI: https://doi.org/10.3969/j.issn.0258-7076.2011.02.016

2011-01-01

Abstract:As lower temperature gradient and lesser crystal growth rate could be realized in the crystal grown by VGF technique, VGF was one of the main process for large-size and high quality crystal growing. Ge crystal of 6 inch growing with VGF process was studied by numerical simulation, and the module based on the VGF crystal growing furnace designed by GRINM (General Research Institute for Non-Ferrous Metals of Beijing). The result showed that the temperature gradient (approach the interface) in crystal and melt was lower. Particularly, when the crystal was grown at full-grown segment, the axial temperature gradient was between 2~3 K·cm-1 in the crystal and 0.8~1 K·cm-1 in the melt. The thermal stress was between (2~9)×104 Pa, lower CRSS (Critical Resolved Shear Stress) of Ge crystal except that at the edge of crystal. At the same time, the interface kept a flatness shape. The gap between the crucible and the support had a great affect on the "interface effect". The heat flux vertical the wall of the p-BN crucible was increased by reducing the width of the gap from 8 mm to 2 mm, which led the maximum thermal stress at the edge of crystal to reduce to 0.21 MPa. The value was equivalent to the CRSS of Ge crystal, and the thermal field had been optimized.