Abstract:Optical and laser crystals grown by Czochralski technique from a solute-rich melt usually suffer defects of melt inclusion or bubble core, which severely affects optical, thermal and mechanical properties of the material. The main purpose of this paper is to study the inclusion mechanisms and to minimize such defects. Two types of mechanisms possibly responsible for inclusion defects are presented. In the current investigation, Czochralski grown optical single crystals are examined to recognize the effects of crystal rotation and natural convection on the melt flow pattern and solidification interface shape. It is established that increasing the rotation rate of crystal or reducing natural convection in the melt will cause the solid-liquid interface change from the convex shape to concave and high concentration of the species may be pushed away from the solidification interface. Simulations were performed to establish the relationships between Gr/Re-2 and growth interface shape change, and between Gr/Re-2 and stagnant point location were established. A disk submerged into the melt was used to reduce natural convection by reducing the melt height. The idea was similar to the submerged baffle or submerged heater used in Bridgeman crystal growth. The effect of submerged baffle on enhancement of crystal rotation effect was demonstrated. Simulation results showed that the melt flow near the solidification interface depended strongly on the baffle location, which was not surprised. The idea of submerged heater was also examined in Czochralski growth. Different from a constant temperature close to the melting temperature used in Bridgman growth, the submerged heater temperature should be selected on a higher temperature between the melting temperature and crucible temperature. The value depended strongly on the ratio between crystal and crucible diameters. It was proved that a constant temperature was not the best choice in Czochralski growth. In fact, an optimized temperature profile could be found in numerical simulations for melt flow control and inclusion suppression.

Numerical Modeling of CdZnTe-VBM Crystal Growth

Numerical Simulation of Β-Ga2o3 Single Crystal Growth by Czochralski Method with an Insulation Lid

Numerical Simulation of CdTe Crystal Growth Using the Vertical Gradient Freeze Technique Assisted by Axial Low-Frequency Oscillations of the Melt

Studies on Thermal and Interface Optimization for CdZnTe Crystals by Unseeded Traveling Heater Method

Numerical Investigation of the VB Growth of CaF2 Crystal with Supercooled Crucible Wall

Numerical Study of ACRT in the THM Growth of CdZnTe Crystals

Local and Global Simulations of Bridgman and Liquid-Encapsulated Czochralski Crystal Growth

Controlling Nucleation During Unseeded THM Growth of CdZnTe Crystal

Advancements in Iso-Diameter seeded growth of CdZnTe crystals: A numerical modeling approach and applications in liquid phase Epitaxy

Suppression of Melt Convection in a Proposed Bridgman Crystal Growth System

Effects of Solution Height and Crystal Rotation on the Solution Flow Behavior in the Top-Seeded Solution Growth of SiC Single Crystals

Optimization of the Thermal Field of 8-Inch SiC Crystal Growth by PVT Method with “3 Separation Heater Method”

A Novel Method For Melt Flow Control And Inclusion Suppression In Optical Crystal Growth

A Volume Radiation Heat Transfer Model for Czochralski Crystal Growth Processes

Vertical Bridgman seeded growth of Cd1-xZnxTe crystals

Optimization of thermal field of 150 mm SiC crystal growth by PVT method

Growth Of Different Crystals Using A Modified Bridgman System

The temperature field characteristics and amorphous formation ability during the continuous casting process of Zr-based bulk metallic glass

A computer simulation of crystal growth by the traveling-solvent method (TSM): pseudo-steady-state calculations

Numerical simulation of combined flow in Czochralski crystal growth

Controlling Te inclusion during direct mixed solution growth of large size CdZnTe crystal