Abstract:In order to optimize the control parameters of CdZnTe single crystal growth with vertical Bridgman method, the influences were investigated of the enhancement of heat exchange, such as increasing the axial outward heat flux of the crucible bottom, the radial outward heat flux of the crucible wall, the carbon film thickness on the crucible inner wall, et al, on CdZnTe crystal growth process. When the axial outward heat flux of the crucible bottom is magnified ten times, the melt convection near the solid-liquid interface gets enhanced in a great deal, the interface concavity reduces extraordinarily at the beginning of the solidification process, but increases a lot later. The radial solute segregation decreases evidently in the initial part of the crystal (about one fourth of the whole ingot) , and the length of the axial iso-concentration zone increases a little. When the axial outward heat flux of the crucible bottom is magnified fifty times, negative radial segregation and positive axial segregation come into being in the initial part of the crystal. When the radial outward heat flux of the crucible wall is magnified, both the melt convection and the interface concavity reduce at the beginning of the solidification process, but increases a lot later. The increase of the carbon film thickness results in a notable reduction of the melt convection, and a great increase of the interface concavity. Nevertheless , both of them, the increases of the radial outward heat flux and the carbon film thickness, could hardly affect the solute segregation of the crystal.

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Influence of Enhancement of Heat Exchange on CdZnTe Crystal Growth Process

The Effects Of Acrt On The Growth Of Znte Crystal By The Temperature Gradient Solution Growth Technique

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Growth and Characterization of Cdznte Bulk Crystals Grown by Temperature Gradient Solution Growth

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Characterization of Cr-Doped Znte Crystals Grown by Temperature Gradient Solution Growth (Tgsg)

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Characterization and Chemical Surface Texturization of Bulk ZnTe Crystals Grown by Temperature Gradient Solution Growth

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