Abstract:In order to optimize the control parameters of CdZnTe single crystal growth with vertical Bridgman method, the influences were investigated of the enhancement of heat exchange, such as increasing the axial outward heat flux of the crucible bottom, the radial outward heat flux of the crucible wall, the carbon film thickness on the crucible inner wall, et al, on CdZnTe crystal growth process. When the axial outward heat flux of the crucible bottom is magnified ten times, the melt convection near the solid-liquid interface gets enhanced in a great deal, the interface concavity reduces extraordinarily at the beginning of the solidification process, but increases a lot later. The radial solute segregation decreases evidently in the initial part of the crystal (about one fourth of the whole ingot) , and the length of the axial iso-concentration zone increases a little. When the axial outward heat flux of the crucible bottom is magnified fifty times, negative radial segregation and positive axial segregation come into being in the initial part of the crystal. When the radial outward heat flux of the crucible wall is magnified, both the melt convection and the interface concavity reduce at the beginning of the solidification process, but increases a lot later. The increase of the carbon film thickness results in a notable reduction of the melt convection, and a great increase of the interface concavity. Nevertheless , both of them, the increases of the radial outward heat flux and the carbon film thickness, could hardly affect the solute segregation of the crystal.

Effects of Growth Speed on Shape of Solid-Liquid Interface During Modified-Bridgman Growth of HgCdTe

Influence of Enhancement of Heat Exchange on CdZnTe Crystal Growth Process

Solute redistribution during Bridgman single crystal growth of Hg1-x-CdxTe and its restriction on the growth rate

Effect of Variable Crucible Dropping Rate on Solid‐liquid Interface in CdZnTe Crystal Growth

Growth of Large Diameter (φ40mm) HgCdTe Crystal By Pressure-Modified Bridgman Method

Numerical simulation of S-L interface shape of asymmetrical Bridgman-Hg1-XCdxTe crystal growth

Thermal and Solute Transportation Effects During Bridgman Crystal Growth of II-VI Compounds

Study on Te Inclusions Distributions of Different Solid–liquid Interface Shapes Within CdZnTe Crystals

Optimization of the growth interface during the growth of ZnTe crystal by the temperature gradient solution growth technique

Studies on Thermal and Interface Optimization for CdZnTe Crystals by Unseeded Traveling Heater Method

Growth Of Different Crystals Using A Modified Bridgman System

Growth and Properties of 40mm Diameter Hg1−xCdxTe Using the Two- Stage Pressurised Bridgman Method

Investigation of Influence of Accelerated Rotating Wave on Solid-Liquid Interface in Cdznte Acrt Crystal Growth

The Concentration Distribution and X-Ray Measurement of Nearby the Cd1 -xZnxTe Solid-liquid Interface

A Two-Stage Technique for Single Crystal Growth of HgCdTe Using a Pressurized Bridgman Method

Effect of the Gap Width and Crucible Radius on CdZnTe Crystal Growth by Detached Solidification

A modified vertical Bridgman method for growth of high-quality Cd<sub>1−x</sub>Zn<sub>x</sub>Te crystals

Vertical Bridgman seeded growth of Cd1-xZnxTe crystals

Numerical analysis on Hg1−xCdxTe growth by ACRT-VBM

The Observation of First-to-Freeze Point During Brigdman Growth of HgCdTe Crystal

The Transport Phenomena During the Growth of ZnTe Crystal by the Temperature Gradient Solution Growth Technique